scholarly journals RADIATIVE TRANSITION AND NONRADIATIVE PROCESS IN ZnS:Ho3+

1986 ◽  
Vol 35 (12) ◽  
pp. 1574
Author(s):  
SHEN YONG-RONG ◽  
ZHANG HONG
Keyword(s):  
Radiative Transition ◽  
Nonradiative Process

Radiative transition dynamics of holmium ions-doped LaF3 nanocrystals

2017 ◽  
Vol 29 (2) ◽  
pp. 1607-1613 ◽  
Author(s):  
Hoang Manh Ha ◽  
Tran Thi Quynh Hoa ◽  
Le Van Vu ◽  
Nguyen Ngoc Long
Keyword(s):  
Radiative Transition ◽  
Transition Dynamics

Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg1−xCdxTe

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
S.G. Gasan-Zade ◽  
M.V. Strikha ◽  
G.A. Shepelskii
Keyword(s):  
Electric Field ◽  
Impact Ionization ◽  
Strong Electric Field ◽  
Radiative Transition ◽  
Hot Electrons ◽  
Acceptor Level ◽  
Threshold Values ◽  
Red Emission ◽  
V Band ◽  
Infra Red

AbstractThe intensive far infra-red irradiation in the range of 80–100 μm was observed in uniaxially strained gapless p-Hg1−xCdxTe (MCT) with x = 0.14 in the strong electric field. The inverse occupation in strained MCT is created because the hot electrons distribution occurs in the c-band under impact ionization, while the holes are localized near the v-band top. The probability of band-to-band radiative transition increases dramatically when the acceptor level becomes resonance in the v-band. At threshold values of strain and electric field (P = 2.5–2.7 kbar, E = 50–55 V/cm), increase in irradiation (by 3 orders of magnitude) and increase in current (by 4–6 times) occur.

Structural, Surface Morphological and Photoluminescence Properties of Nanostructured Porous Silicon Material for Optoelectronics Application

2012 ◽  
Vol 584 ◽  
pp. 290-294 ◽  
Author(s):  
Jeyaprakash Pandiarajan ◽  
Natarajan Jeyakumaran ◽  
Natarajan Prithivikumaran
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Light Emission ◽  
Electrochemical Etching ◽  
Light Emitting Diode ◽  
Radiative Transition ◽  
Sem Images ◽  
Optoelectronic Application ◽  
Gap Opening ◽  
P Type

The promotion of silicon (Si) from being the key material for microelectronics to an interesting material for optoelectronic application is a consequence of the possibility to reduce its device dimensionally by a cheap and easy technique. In fact, electrochemical etching of Si under controlled conditions leads to the formation of nanocrystalline porous silicon (PS) where quantum confinement of photo excited carriers and surface species yield to a band gap opening and an increased radiative transition rate resulting in efficient light emission. In the present study, the nanostructured PS samples were prepared using anodic etching of p-type silicon. The effect of current density on structural and optical properties of PS, has been investigated. XRD studies confirm the presence of silicon nanocrystallites in the PS structure. By increasing the current density, the average estimated values of grain size are found to be decreased. SEM images indicate that the pores are surrounded by a thick columnar network of silicon walls. The observed PL spectra at room temperature for all the current densities confirm the formation of PS structures with nanocrystalline features. PL studies reveal that there is a prominent visible emission peak at 606 nm. The obtained variation of intensity in PL emission may be used for intensity varied light emitting diode applications. These studies confirm that the PS is a versatile material with potential for optoelectronics application.

Infra-red chemiluminescence II. Spectroscopic data

1960 ◽  
Vol 258 (1295) ◽  
pp. 564-575 ◽  
Keyword(s):  
Transition Probabilities ◽  
Molecular Spectroscopy ◽  
Radiative Transition ◽  
Absorption Data ◽  
A Value ◽  
Interaction Factor ◽  
Infra Red ◽  
Rotational Distribution ◽  
Vibration Rotation ◽  
First Time

The technique described in part I has been used to obtain constants of interest in molecular spectroscopy. The vibration-rotation interaction factor, F for HCl has been evaluated from the infra-red emission spectrum. The critical parameter in F is θ = M 0 / M 1 r e , where M 0 and M 1 are the first two coefficients in the electric dipole moment expansion about the equilibrium internuclear distance r e . A value of θ = + 1.12 ± 0.18 has been obtained. It is shown that for molecules with θ = +1 the total band intensity in emission is independent of the rotational distribution in the vibrational state from which the emission occurs. This has been made use of in evaluating radiative transition probabilities. For the HCl v (3-1) transition a value for | R 3 1 | 2 (= 1.60 x 10 -4 debye 2 ) was obtained for the first time. The same method yields a value of | R 2 1 | 2 / | R 2 0 | 2 = 204, in good agreement with an earlier estimate from absorption data.

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