scholarly journals DETERMINATION OF THE GENERATION LIFETIME AND SURFACE GENERATION VELOCITY BY VOLTAGE STEP METHOD

1983 ◽  
Vol 32 (2) ◽  
pp. 239
Author(s):  
ZHANG XIU-MIAO ◽  
BAO ZONG-MING ◽  
SU JIU-LING
Keyword(s):  
Surface Generation ◽  
Step Method ◽  
Voltage Step ◽  
Surface Generation Velocity ◽  
Generation Lifetime

Carrier Lifetime Reduction by Ion Implantation into Silicon

1983 ◽  
Vol 27 ◽  
Author(s):  
A. Mdgro-Campero ◽  
R.P. Love
Keyword(s):  
Ion Implantation ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
Surface Generation ◽  
In Doping ◽  
Versatile Tool ◽  
Surface Generation Velocity ◽  
Generation Lifetime ◽  
Penetration Depths

ABSTRACTIon implantation is emerging as a versatile tool for the control of carrier lifetime in silicon. We present results on the use of argon and proton implantations to reduce lifetime. Particle energies used imply submicron penetration depths into the silicon. We find that within the first micrometer from the surface, the generation lifetime can be reduced by several orders of magnitude, and varies inversely with dose. A change in doping concentration was found only at the highest dose used (1014 cm−2). Effects of the implantations on surface generation velocity and oxide charges were also studied.

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