scholarly journals THE STUDIES OF PHASE DIAGRAM AND CRYSTALLIZATION KINETICS OF AN AMORPHOUS STATE IN THE PSEUDO-BINARY SYSTEM LiIO3-NaIO3

1982 ◽  
Vol 31 (5) ◽  
pp. 623
Author(s):  
LIANG JING-KUI ◽  
CHE GUANG-CAN ◽  
ZHANG YU-LING
Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1729
Author(s):  
Minh Anh Luong ◽  
Nikolay Cherkashin ◽  
Béatrice Pecassou ◽  
Chiara Sabbione ◽  
Frédéric Mazen ◽  
...  

Among the phase change materials, Ge2Sb2Te5 (GST-225) is the most studied and is already integrated into many devices. N doping is known to significantly improve some key characteristics such as the thermal stability of materials and the resistance drift of devices. However, the origin, at the atomic scale, of these alterations is rather elusive. The most important issue is to understand how N doping affects the crystallization characteristics, mechanisms and kinetics, of GST-225. Here, we report the results of a combination of in situ and ex situ transmission electron microscopy (TEM) investigations carried out on specifically designed samples to evidence the influence of N concentration on the crystallization kinetics and resulting morphology of the alloy. Beyond the known shift of the crystallization temperature and the observation of smaller grains, we show that N renders the crystallization process more “nucleation dominated” and ascribe this characteristic to the increased viscosity of the amorphous state. This increased viscosity is linked to the mechanical rigidity and the reduced diffusivity resulting from the formation of Ge–N bonds in the amorphous phase. During thermal annealing, N hampers the coalescence of the crystalline grains and the cubic to hexagonal transition. Making use of AbStrain, a recently invented TEM-based technique, we evidence that the nanocrystals formed from the crystallization of N-doped amorphous GST-225 are under tension, which suggests that N is inserted in the lattice and explains why it is not found at grain boundaries. Globally, all these results demonstrate that the origin of the effect of N on the crystallization of GST-225 is not attributed to the formation of a secondary phase such as a nitride, but to the ability of N to bind to Ge in the amorphous and crystalline phases and to unbind and rebind with Ge along the diffusion path of this atomic species during annealing.


2020 ◽  
Author(s):  
Liyuan Wang ◽  
Jiaxi Liu ◽  
Nan Lu ◽  
Zengchao Yang ◽  
Gang He ◽  
...  

2000 ◽  
Vol 650 ◽  
Author(s):  
Lance L. Snead ◽  
Martin Balden

ABSTRACTDensification and crystallization kinetics of bulk SiC amorphized by neutron irradiation is studied. The temperature of crystallization onset of this highly pure, fully amorphous bulk SiC was found to be between 875-885°C and crystallization is nearly complete by 950°C. In-situ TEM imaging confirms the onset of crystallization, though thin-film effects apparently alter the kinetics of crystallization above this temperature. It requires >1125°C for complete crystallization of the TEM foil. Annealing at temperatures between the irradiation and crystallization onset temperature is seen to cause significant densification attributed to a relaxation, or reordering, of the as-amorphized structure.


Author(s):  
Pratim Kumar Patra ◽  
Aanchal Jaisingh ◽  
Vishal Goel ◽  
Gurpreet Singh Kapur ◽  
Leena Nebhani

2021 ◽  
Vol 154 (14) ◽  
pp. 144703
Author(s):  
R. Scott Smith ◽  
M. Tylinski ◽  
Greg A. Kimmel ◽  
Bruce D. Kay

2021 ◽  
Vol 608 ◽  
pp. 412745
Author(s):  
Mohamed N. Abd-el Salam ◽  
E.R. Shaaban ◽  
F. Benabdallah ◽  
Abdelwahab M.A. Hussein ◽  
Mansour Mohamed

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