scholarly journals Development of In-plane Thermal Conductivity Calculation Methods in Thin Films

2017 ◽  
Vol 17 (06) ◽  
pp. 56-71
Author(s):  
A Barinov ◽  
K Zhang ◽  
B Lu ◽  
V Khvesyuk
2014 ◽  
Vol 1041 ◽  
pp. 281-287 ◽  
Author(s):  
Balázs Nagy

In this paper, the most common approximate thermal conductivity calculation methods were compared through Hungarian soil samples with laboratory measurement results and the representative values of EN ISO 13370:2007. Based on the results, the soil’s thermal conductivity can be estimated using the modified Johansen method for higher sand containing samples, and de Vries’s method for the high silt and clay containing samples. In the light of the test results, two new methods were developed, which can be used for sandy clay silt samples. These gave almost identical results compared to the measured values and were also more accurate than the other estimations in the analysed situations.


2020 ◽  
Vol 83 (11) ◽  
pp. 1538-1548
Author(s):  
A. A. Barinov ◽  
B. Liu ◽  
V. I. Khvesyuk ◽  
K. Zhang

2019 ◽  
Vol 677 ◽  
pp. 21-25 ◽  
Author(s):  
Yucheng He ◽  
Xiaoheng Li ◽  
Ling Ge ◽  
Qinyun Qian ◽  
Wenbing Hu

2020 ◽  
Vol 4 (5) ◽  
Author(s):  
Alexandros Sarantopoulos ◽  
Dipanjan Saha ◽  
Wee-Liat Ong ◽  
César Magén ◽  
Jonathan A. Malen ◽  
...  

2006 ◽  
Vol 326-328 ◽  
pp. 689-692
Author(s):  
Seung Jae Moon

The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.


2006 ◽  
Vol 45 (3) ◽  
pp. 313-318 ◽  
Author(s):  
Chelakara S. Subramanian ◽  
Tahani Amer ◽  
Billy T. UpChurch ◽  
David W. Alderfer ◽  
Cecil Burkett ◽  
...  

2007 ◽  
Vol 1020 ◽  
Author(s):  
S. Budak ◽  
S. Guner ◽  
C. Muntele ◽  
C. C. Smith ◽  
B. Zheng ◽  
...  

AbstractSemiconducting â-Zn4Sb3and ZrNiSn-based half-heusler compound thin films were prepared by co-evaporation for the application of thermoelectric (TE) materials. High-purity solid zinc and antimony were evaporated by electron beam to grow the â-Zn4Sb3thin film while high-purity zirconium powder and nickel tin powders were evaporated by electron beam to grow the ZrNiSn-based half-heusler compound thin film. Rutherford backscattering spectrometry (RBS) was used to analyze the composition of the thin films. The grown thin films were subjected to 5 MeV Si ions bombardments for generation of nanostructures in the films. We measured the thermal conductivity, Seebeck coefficient, and electrical conductivity of these two systems before and after 5 MeV Si ions beam bombardments. The two material systems have been identified as promising TE materials for the application of thermal-to-electrical energy conversion, but the efficiency still limits their applications. The electronic energy deposited due to ionization in the track of MeV ion beam can cause localized crystallization. The nanostructures produced by MeV ion beam can cause significant change in both the electrical and the thermal conductivity of thin films, thereby improving the efficiency. We used the 3ù-method measurement system to measure the cross-plane thermal conductivity ,the Van der Pauw measurement system to measure the cross-plane electrical conductivity, and the Seebeck-coefficient measurement system to measure the cross-plane Seebeck coefficient. The thermoelectric figures of merit of the two material systems were then derived by calculations using the measurement results. The MeV ion-beam bombardment was found to decrease the thermal conductivity of thin films and increase the efficiency of thermal-to-electrical energy conversion.


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