scholarly journals Investigating the electro-optical properties of non-stoichiometric silicon nitride thin films for photovoltaic applications

2013 ◽  
Vol 46 (4) ◽  
pp. 309-314
Author(s):  
Oriol Blazquez
2005 ◽  
Vol 192 (2-3) ◽  
pp. 225-230 ◽  
Author(s):  
J.M. Lackner ◽  
W. Waldhauser ◽  
R. Berghauser ◽  
R. Ebner ◽  
M. Beutl ◽  
...  

1988 ◽  
Vol 63 (8) ◽  
pp. 2651-2659 ◽  
Author(s):  
Rhett E. Livengood ◽  
Mark A. Petrich ◽  
Dennis W. Hess ◽  
Jeffrey A. Reimer

2018 ◽  
Vol 499 ◽  
pp. 328-336
Author(s):  
L.F. Mulcué Nieto ◽  
W. Saldarriaga ◽  
W. de la Cruz ◽  
E. Restrepo ◽  
Carlos Daniel Acosta-Medina ◽  
...  

2022 ◽  
Author(s):  
Elias Zsolt Stutz ◽  
Mahdi Zamani ◽  
Djamshid Damry ◽  
Lea Buswell ◽  
Rajrupa Paul ◽  
...  

Zinc phosphide, Zn3P2, is a semiconductor with a high absorption coefficient in the spectral range relevant for single junction photovoltaic applications. It is made of elements abundant in the Earth’s...


2014 ◽  
Vol 44 ◽  
pp. 145-150 ◽  
Author(s):  
O. Blázquez ◽  
J. López-Vidrier ◽  
S. Hernández ◽  
J. Montserrat ◽  
B. Garrido

2013 ◽  
Vol 834-836 ◽  
pp. 100-103 ◽  
Author(s):  
Zhi You Zhong ◽  
H. Wang ◽  
T. Zhang ◽  
C. Lan ◽  
S.B. Chen

Thin films of transparent conducting titanium-doped zinc oxide (TZO) were deposited by radio-frequency magnetron sputtering technique using a sintered ceramic target of ZnTiO3. The structural and optical properties of the thin films were characterized with X-ray diffraction and spectrophotometer. The results show that the polycrystalline TZO thin films consist of the hexagonal crystal structures withc-axis as the preferred growth orientation normal to the substrate, and that the titanium doping level significantly affects the crystal structures and optical properties of the thin films. The TZO film deposited with the titanium content of 3 wt% has the relatively well crystallinity, the largest crystal size and the highest average visible transmittance. Furthermore, the optical constants and optical energy gaps of the thin films were determined by optical characterization method.


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