Computational Investigation of Electronic and Optical Properties of Si, Ge and Si1-xGex Alloys Using the FP-LMTO Method Augmented by a Plane-Wave Basis

2012 ◽  
Vol 2 (1) ◽  
pp. 1-10 ◽  
Author(s):  
K. Zellat ◽  
B. Soudini ◽  
N. Sekkal ◽  
S. M. Ait Cheikh
2014 ◽  
Vol 900 ◽  
pp. 203-208 ◽  
Author(s):  
Ting Ting Shao ◽  
Fu Chun Zhang ◽  
Wei Hu Zhang

The structural, electronic, and optical properties of rutile-type SnO2 are studied by plane-wave pseudopotential density functional theory (DFT) with GGA, LDA, B3LYP and PBE0 respectively. The computing results show that the band gap getting from PBE0 and B3LYP is much more consistent with the available experimental data than that from GGA and LDA, no matter what the latter use ultra-soft pseudopotential or norm conserving pseudopotential. However, the density of state, real part and imaginary part of dielectric function calculating from every type is basically similar in qualitative analysis.


2020 ◽  
Author(s):  
Messaoud Caid

An investigation into the structural, electronic and optical properties of superlattices(SLs) (ZnSe)n/(ZnTe)n was conducted using first principles calculations based on density functional theory (DFT). The total energies were calculated within the full-potential linear muffin-tin orbital (FP-LMTO) method augmented by a plane-wave basis (PLW), implemented in LmtART 7.0 code. The effects of the approximations to the exchange-correlation energy were treated by the local density approximation (LDA). The ground state properties of (ZnSe)n/(ZnTe)n binary compounds are determined and compared with the available data. It is found that the superlattice (n-n: 1-1, 2-2 and 3-3) band gaps vary depending on the layers used. The optical constants, including the dielectric function ε(w), the refractive index n(w) and the reflectivity R(w), are calculated for radiation energies up to 35eV.


2016 ◽  
pp. 3298-3311
Author(s):  
M. Benkraouda ◽  
N. Amrane

          In this work we present self-consistent calculations for the electronic and optical properties of Zinc oxide. A theoretical investigation of the electronic properties (band structure, density of charge and contour map) and optical properties (refractive index, absorption coefficient, dielectric constants and reflectivity) of Zinc oxide semiconductor ZnO. A full-potential linearized augmented plane-wave (FPLAPW) method was used within the density functional theory (DFT) along with the generalized gradient approximation (GGA96) exchange correlation potential. The results are compared with the experimental data available and some other theoretical work. We found that the GGA approximation yields only a small improvement to the band gap, however, if we allow for a rigid shift of the band structure, the so-called scissor’s operator, the optical properties are excellently reproduced.


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