Leakage power reduction techniques of 45 nm static random access memory (SRAM) cells

2011 ◽  
Vol 6 (32) ◽  
Author(s):  
Manish Dev Singh
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Power Reduction ◽  
Leakage Power ◽  
Static Random Access Memory ◽  
Access Memory ◽  
Reduction Techniques

Analysis of FSRAM Single Bit Failures Due to Unique Dislocations

1998 ◽  
Author(s):  
Phil Schani ◽  
S. Subramanian ◽  
Vince Soorholtz ◽  
Pat Liston ◽  
Jamey Moss ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Temperature Sensitive ◽  
Wafer Level ◽  
Top Down ◽  
Access Memory ◽  
Transmission Electron ◽  
Contact Processing

Abstract Temperature sensitive single bit failures at wafer level testing on 0.4µm Fast Static Random Access Memory (FSRAM) devices are analyzed. Top down deprocessing and planar Transmission Electron Microscopy (TEM) analyses show a unique dislocation in the substrate to be the cause of these failures. The dislocation always occurs at the exact same location within the bitcell layout with respect to the single bit failing data state. The dislocation is believed to be associated with buried contact processing used in this type of bitcell layout.

Challenges and Benefits of Product-Like SRAM in Technology Development

2011 ◽  
Author(s):  
Felix Beaudoin ◽  
Stephen Lucarini ◽  
Fred Towler ◽  
Stephen Wu ◽  
Zhigang Song ◽  
...  
Keyword(s):  
Technology Development ◽  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Development Phase ◽  
High Complexity ◽  
Access Memory ◽  
Integration Schemes ◽  
Front End

Abstract For SRAMs with high logic complexity, hard defects, design debug, and soft defects have to be tackled all at once early on in the technology development while innovative integration schemes in front-end of the line are being validated. This paper presents a case study of a high-complexity static random access memory (SRAM) used during a 32nm technology development phase. The case study addresses several novel and unrelated fail mechanisms on a product-like SRAM. Corrective actions were put in place for several process levels in the back-end of the line, the middle of the line, and the front-end of the line. These process changes were successfully verified by demonstrating a significant reduction of the Vmax and Vmin nest array block fallout, thus allowing the broader development team to continue improving random defectivity.

AS8‐static random access memory (SRAM): asymmetric SRAM architecture for soft error hardening enhancement

2017 ◽  
Vol 11 (1) ◽  
pp. 89-94 ◽  
Author(s):  
Ihsen Alouani ◽  
Wael M. Elsharkasy ◽  
Ahmed M. Eltawil ◽  
Fadi J. Kurdahi ◽  
Smail Niar
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Soft Error ◽  
Static Random Access Memory ◽  
Access Memory
Sign in / Sign up

Export Citation Format

Share Document