scholarly journals Hydrothermal Synthesis of Zinc Tin Oxide Nanostructures for Photocatalysis, Energy Harvesting and Electronics

2020 ◽  
Author(s):  
Ana Isabel Bento Rovisco ◽  
Rita Branquinho ◽  
Joana Vaz Pinto ◽  
Rodrigo Martins ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Hydrothermal Synthesis ◽  
Energy Harvesting ◽  
Tin Oxide ◽  
Flexible Electronics ◽  
Energy Harvesters ◽  
Oxide Nanostructures ◽  
Smart Surfaces ◽  
Zinc Tin Oxide ◽  
Wide Potential

The massification of Internet of Things (IoT) and Smart Surfaces has increased the demand for nanomaterials excelling at specific properties required for their target application, but also offering multifunctionality, conformal integration in multiple surfaces and sustainability, in line with the European Green Deal goals. Metal oxides have been key materials for this end, finding applications from flexible electronics to photocatalysis and energy harvesting, with multicomponent materials as zinc tin oxide (ZTO) emerging as some of the most promising possibilities. This chapter is dedicated to the hydrothermal synthesis of ZTO nanostructures, expanding the already wide potential of ZnO. A literature review on the latest progress on the synthesis of a multitude of ZTO nanostructures is provided (e.g., nanowires, nanoparticles, nanosheets), emphasizing the relevance of advanced nanoscale techniques for proper characterization of such materials. The multifunctionality of ZTO will also be covered, with special attention being given to their potential for photocatalysis, electronic devices and energy harvesters.

Shape Effect of Zinc-Tin Oxide Nanostructures on Photodegradation of Methylene Blue and Rhodamine B under UV and Visible Light

2021 ◽  
Vol 4 (2) ◽  
pp. 1149-1161 ◽  
Author(s):  
Ana Rovisco ◽  
Rita Branquinho ◽  
Jonas Deuermeier ◽  
Tomás Freire ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Methylene Blue ◽  
Visible Light ◽  
Tin Oxide ◽  
Rhodamine B ◽  
Shape Effect ◽  
Oxide Nanostructures ◽  
Zinc Tin Oxide

A Sustainable Approach to Flexible Electronics with Zinc-Tin Oxide Thin-Film Transistors

2018 ◽  
Vol 4 (7) ◽  
pp. 1800032 ◽  
Author(s):  
Cristina Fernandes ◽  
Ana Santa ◽  
Ângelo Santos ◽  
Pydi Bahubalindruni ◽  
Jonas Deuermeier ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Tin Oxide

Thin film characterization of zinc tin oxide deposited by thermal atomic layer deposition

2014 ◽  
Vol 556 ◽  
pp. 186-194 ◽  
Author(s):  
Marja N. Mullings ◽  
Carl Hägglund ◽  
Jukka T. Tanskanen ◽  
Yesheng Yee ◽  
Scott Geyer ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Thin Film Characterization ◽  
Zinc Tin Oxide

Characterization of zinc-tin-oxide films deposited by thermal co-evaporation

2012 ◽  
Vol 520 (19) ◽  
pp. 6130-6133 ◽  
Author(s):  
R. Acharya ◽  
Y.Q. Zhang ◽  
X.A. Cao
Keyword(s):  
Tin Oxide ◽  
Oxide Films ◽  
Zinc Tin Oxide ◽  
Tin Oxide Films

scholarly journals Mechanical Stress Stability of Flexible Amorphous Zinc Tin Oxide Thin-Film Transistors

2021 ◽  
Vol 2 ◽  
Author(s):  
Oliver Lahr ◽  
Max Steudel ◽  
Holger von Wenckstern ◽  
Marius Grundmann
Keyword(s):  
Electrical Properties ◽  
Tin Oxide ◽  
Flexible Electronics ◽  
Field Effect ◽  
Tensile Strain ◽  
Room Temperature ◽  
Oxide Thin Film ◽  
Field Effect Mobility ◽  
Threshold Voltage Shift ◽  
Zinc Tin Oxide

Due to their low-temperature processing capability and ionic bonding configuration, amorphous oxide semiconductors (AOS) are well suited for applications within future mechanically flexible electronics. Over the past couple of years, amorphous zinc tin oxide (ZTO) has been proposed as indium and gallium-free and thus more sustainable alternative to the widely deployed indium gallium zinc oxide (IGZO). The present study specifically focuses on the strain-dependence of elastic and electrical properties of amorphous zinc tin oxide thin-films sputtered at room temperature. Corresponding MESFETs have been compared regarding their operation stability under mechanical bending for radii ranging from 5 to 2 mm. Force-spectroscopic measurements yield a plastic deformation of ZTO as soon as the bending-induced strain exceeds 0.83 %. However, the electrical properties of ZTO determined by Hall effect measurements at room temperature are demonstrated to be unaffected by residual compressive and tensile strain up to 1.24 %. Even for the maximum investigated tensile strain of 1.26 %, the MESFETs exhibit a reasonably consistent performance in terms of current on/off ratios between six and seven orders of magnitude, a subthreshold swing around 350 mV/dec and a field-effect mobility as high as 7.5 cm2V−1s−1. Upon gradually subjecting the transistors to higher tensile strain, the channel conductivity steadily improves and consequently, the field-effect mobility increases by nearly 80 % while bending the devices around a radius of 2 mm. Further, a reversible threshold voltage shift of about −150 mV with increasing strain is observable. Overall, amorphous ZTO provides reasonably stable electrical properties and device performance for bending-induced tensile strain up to at least 1.26 % and thus represent a promising material of choice considering novel bendable and transparent electronics.

scholarly journals Hydrothermal Synthesis and Characterization of Tin Oxide (SnO2) Nanoparticles

2020 ◽  
Vol 9 (2) ◽  
pp. 15-19
Author(s):  
T. Regin Das T. Regin Das ◽  
M. Meena M. Meena ◽  
I. Vetha Potheher I. Vetha Potheher ◽  
P. Aji Udhaya P. Aji Udhaya
Keyword(s):  
Hydrothermal Synthesis ◽  
Tin Oxide ◽  
Sno2 Nanoparticles ◽  
Synthesis And Characterization
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