scholarly journals Analysis of Quantum Confinement and Carrier Transport of Nano-Transistor in Quantum Mechanics

2020 ◽  
Author(s):  
Aynul Islam ◽  
Anika Tasnim Aynul
Author(s):  
David K Ferry ◽  
Josef Weinbub ◽  
Mihail Nedjalkov ◽  
Siegfried Selberherr

Abstract Confinement in small structures has required quantum mechanics, which has been known for a great many years. This leads to quantum transport. The field-effect transistor has had no need to be described by quantum transport over most of the century for which it has existed. But, this has changed in the past few decades, as modern versions tend to be absolutely controlled by quantum confinement and the resulting modifications to the normal classical descriptions. In addition, correlation and confinement lead to a need for describing the transport by quantum methods as well. In this review, we describe the quantum effects and the method of treating by various approaches to quantum transport.


2007 ◽  
Vol 7 (12) ◽  
pp. 4318-4321
Author(s):  
Ting Zhang ◽  
Zheng Xu ◽  
Ran Liu ◽  
Feng Teng ◽  
Yongsheng Wang ◽  
...  

The carrier transport capability and luminescence efficiency of poly(2-methoxy-5-(2-ethyl hexyloxy)-p-phenylene vinylene) (MEH-PPV) films are enhanced by doping with dehydrated nanotubed titanic acid (DNTA). MEH-PPV molecules, either wrapped on the outer surface of or encapsulated into DNTA pores, have a more open, straighter conformation than undoped molecules, which induces a longer conjugated backbone and stronger interchain interactions, thereby, enhancing carrier mobility. MEH-PPV molecules within DNTA pores have higher exciton recombination efficiency owing to quantum confinement and the antenna effect.


2021 ◽  
Author(s):  
Sheng Xu ◽  
Yusheng Lei ◽  
Yuheng Li ◽  
Chengchangfeng Lu ◽  
Qizhang Yan ◽  
...  

Abstract Compared with their three-dimensional counterparts, low-dimensional metal halide perovskites with periodic inorganic/organic structures have shown promising stability and hysteresis-free electrical performance, which paves the way for next-generation optoelectronic devices. However, when integrated in devices, they have relatively limited efficiencies because devices usually require carrier transport through the film thickness direction. In conventionally grown single crystals, the carrier transport in the thickness direction is hindered by the insulating organic spacers. In addition, the strong quantum confinement from the organic spacers limits the generation and transport of free carriers. The carrier dynamics is further compromised by the presence of grain boundaries in polycrystals. Here, we report a low-dimensional metal halide perovskite superlattice with efficient carrier transport in three dimensions by epitaxial growth. Epitaxy on a slightly lattice-mismatched substrate compresses the organic spacers in the superlattice, which weakens the quantum confinement and further improves carrier dynamics. The performance of a low-dimensional perovskite superlattice solar cell has been certified under the quasi-steady state for the first time. Moreover, the device shows an unusually high open-circuit voltage, due to a unique intra-band exciton relaxation mechanism.


Materials ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 1935 ◽  
Author(s):  
Daichi Koretomo ◽  
Shuhei Hamada ◽  
Yusaku Magari ◽  
Mamoru Furuta

Electrical and carrier transport properties in In–Ga–Zn–O thin-film transistors (IGZO TFTs) with a heterojunction channel were investigated. For the heterojunction IGZO channel, a high-In composition IGZO layer (IGZO-high-In) was deposited on a typical compositions IGZO layer (IGZO-111). From the optical properties and photoelectron yield spectroscopy measurements, the heterojunction channel was expected to have the type–II energy band diagram which possesses a conduction band offset (ΔEc) of ~0.4 eV. A depth profile of background charge density indicated that a steep ΔEc is formed even in the amorphous IGZO heterojunction interface deposited by sputtering. A field effect mobility (μFE) of bottom gate structured IGZO TFTs with the heterojunction channel (hetero-IGZO TFTs) improved to ~20 cm2 V−1 s−1, although a channel/gate insulator interface was formed by an IGZO−111 (μFE = ~12 cm2 V−1 s−1). Device simulation analysis revealed that the improvement of μFE in the hetero-IGZO TFTs was originated by a quantum confinement effect for electrons at the heterojunction interface owing to a formation of steep ΔEc. Thus, we believe that heterojunction IGZO channel is an effective method to improve electrical properties of the TFTs.


Quantum dots (QDs) are intriguing semiconductors with remarkable quantum confinement, optical and electrical properties which avails for various industrial and commercial applications to revolutionize our world. However, their optimal utilization hinges on the understanding of their properties and computational theories are imperative to explore both existing and new QDs properties. This chapter gives a comprehensive analysis of molecular mechanics and quantum mechanics computational approaches used in the study of the QDs properties.


2016 ◽  
Vol 45 (14) ◽  
pp. 3781-3810 ◽  
Author(s):  
Kaifeng Wu ◽  
Tianquan Lian

Colloidal one-dimensional (1D) semiconductor nanorods (NRs) offer the opportunity to simultaneously maintain quantum confinement in radial dimensions for tunable light absorptions and bulk like carrier transport in the axial direction for long-distance charge separations.


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