Thermoelectric Properties of Chalcogenide System

Thermoelectric Properties of AlN-doped SiC Ceramics

Korean Journal of Metals and Materials ◽

10.3365/kjmm.2012.50.11.839 ◽

2012 ◽

Vol 50 (11) ◽

Keyword(s):

Thermoelectric Properties ◽

Sic Ceramics

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Nanostructure Control and Thermoelectric Properties of Metal Oxide Ceramics

The Journal of the Institute of Electrical Engineers of Japan ◽

10.1541/ieejjournal.128.293 ◽

2008 ◽

Vol 128 (5) ◽

pp. 293-295

Author(s):

Michitaka OHTAKI

Keyword(s):

Metal Oxide ◽

Thermoelectric Properties ◽

Oxide Ceramics ◽

Nanostructure Control

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Synthesis and thermoelectric properties of the pseudo-binary skutterudites CoGe1.5Se1.5 and CoSn1.5Te1.5

10.1557/proc-1148-pp11-01 ◽

2008 ◽

Author(s):

David Johnson ◽

Qiyin Lin ◽

Mary Smeller ◽

Colby Heideman ◽

Arwyn L. E. Smalley

Keyword(s):

Thermoelectric Properties

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Thermoelectric Properties of PbSr(Se,Te)-Based Low Dimensional Structures

MRS Proceedings ◽

10.1557/proc-626-z2.5 ◽

2000 ◽

Vol 626 ◽

Cited By ~ 2

Author(s):

Harald Beyer ◽

Joachim Nurnus ◽

Harald Böttner ◽

Armin Lambrecht ◽

Lothar Schmitt ◽

...

Keyword(s):

Thermal Conductivity ◽

Thermoelectric Properties ◽

Power Factor ◽

Evaluation Method ◽

Interband Transition ◽

Multiple Quantum Well ◽

Calculated Data ◽

Multiple Quantum ◽

Ir Transmission ◽

Low Dimensional

ABSTRACTThermoelectric properties of low dimensional structures based on PbTe/PbSrTe-multiple quantum-well (MQW)-structures with regard to the structural dimensions, doping profiles and levels are presented. Interband transition energies and barrier band-gap are determined from IR-transmission spectra and compared with Kronig-Penney calculations. The influence of the data evaluation method to obtain the 2D power factor will be discussed. The thermoelectrical data of our layers show a more modest enhancement in the power factor σS2 compared with former publications and are in good agreement with calculated data from Broido et al. [5]. The maximum allowed doping level for modulation doped MQW structures is determined. Thermal conductivity measurements show that a ZT enhancement can be achieved by reducing the thermal conductivity due to interface scattering. Additionally promising lead chalcogenide based superlattices for an increased 3D figure of merit are presented.

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Structure and Thermoelectric Properties of New Quaternary Tin and Lead Bismuth Selenides, K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1+xSn5-xBi11+xSe22

MRS Proceedings ◽

10.1557/proc-626-z8.4 ◽

2000 ◽

Vol 626 ◽

Author(s):

Antje Mrotzek ◽

Kyoung-Shin Choi ◽

Duck-Young Chung ◽

Melissa A. Lane ◽

John R. Ireland ◽

...

Keyword(s):

Thermal Conductivity ◽

Single Crystal ◽

Thermoelectric Properties ◽

Three Dimensional ◽

Structure Type ◽

Narrow Gap ◽

Low Thermal Conductivity ◽

Seebeck Coefficients ◽

Metal Atoms ◽

Anionic Framework

ABSTRACTWe present the structure and thermoelectric properties of the new quaternary selenides K1+xM4–2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+xSe22. The compounds K1+xM4-2xBi7+xSe15 (M= Sn, Pb) crystallize isostructural to A1+xPb4-2xSb7+xSe15 with A = K, Rb, while K1-xSn5-xBi11+xSe22 reveals a new structure type. In both structure types fragments of the Bi2Te3-type and the NaCl-type are connected to a three-dimensional anionic framework with K+ ions filled tunnels. The two structures vary by the size of the NaCl-type rods and are closely related to β-K2Bi8Se13 and K2.5Bi8.5Se14. The thermoelectric properties of K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+xSe22 were explored on single crystal and ingot samples. These compounds are narrow gap semiconductors and show n-type behavior with moderate Seebeck coefficients. They have very low thermal conductivity due to an extensive disorder of the metal atoms and possible “rattling” K+ ions.

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