scholarly journals Development and Characterization of High-Quality HfO2/InGaAs MOS Interface

2020 ◽  
Author(s):  
Sukeun Eom ◽  
Min-woo Kong ◽  
Kwang-seok Seo
Keyword(s):  
Academic Research ◽  
High Mobility ◽  
Atomic Layer ◽  
Deposition Process ◽  
Nitrogen Plasma ◽  
State Density ◽  
Oxide Semiconductor ◽  
High K ◽  
Long Time ◽  
High K Dielectric

The scope of this chapter is to introduce a highly efficient HfO2 atomic layer deposition (ALD) process with superior interface defect characteristics that can be applied on high-mobility III-V substrates. For a long time, the major academic research of III-V metal-oxide-semiconductor (MOS) studies was mainly oriented on searching for the suitable high-k dielectric, and among the reported high-k/III-V MOS studies, Al2O3 and AlN have demonstrated the most promising results. However, usually, the dielectrics with higher dielectric constant suffered from more defective interface quality including the HfO2, which should be overcome to meet the intensive operation voltage scaling requirements. In order to protect the interface of the HfO2/III-V MOS, the exposed III-V surface has to be carefully treated before, while, and after the whole high-k deposition process. For this purpose, the effect of isopropyl alcohol precursor and in situ cyclic nitrogen plasma treatment on the HfO2 ALD process at III-V substrates was thoroughly investigated. Remarkable interface state density levels with strong inversion behavior were achieved, which have not been observed at the previous HfO2/InGaAs studies. Also, detailed analysis of the interface characteristics was investigated to broaden the understanding of the improvement phenomenon.

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

EHD-jet patterned MoS2 on a high-k dielectric for high mobility in thin film transistor applications

2021 ◽  
Vol 32 (24) ◽  
pp. 245710
Author(s):  
Thi Thu Thuy Can ◽  
Hak-Lim Ko ◽  
Woon-Seop Choi
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
High Mobility ◽  
High K ◽  
High K Dielectric

scholarly journals Conformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes by Atomic Layer Deposition

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1085 ◽  
Author(s):  
Kemelbay ◽  
Tikhonov ◽  
Aloni ◽  
Kuykendall
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Ambient Conditions ◽  
Nucleation Layer ◽  
Layer Deposition ◽  
High K ◽  
High K Dielectric

As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs— which offer the best switching performance—deposition of conformal, weakly-interacting dielectric layers is necessary. This is challenging due to the chemically inert surface of CNTs and a lack of nucleation sites—especially for defect-free CNTs. As a result, a technique that enables integration of uniform high-k dielectrics, while preserving the CNT’s exceptional properties is required. In this work, we show a method that enables conformal atomic layer deposition (ALD) of high-k dielectrics on defect-free CNTs. By depositing a thin Ti metal film, followed by oxidation to TiO2 under ambient conditions, a nucleation layer is formed for subsequent ALD deposition of Al2O3. The technique is easy to implement and is VLSI-compatible. We show that the ALD coatings are uniform, continuous and conformal, and Raman spectroscopy reveals that the technique does not induce defects in the CNT. The resulting bilayer TiO2/Al2O3 thin-film shows an improved dielectric constant of 21.7 and an equivalent oxide thickness of 2.7 nm. The electrical properties of back-gated and top-gated devices fabricated using this method are presented.

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