scholarly journals Technological Background and Properties of Thin Film Semiconductors

2020 ◽  
Author(s):  
Orkut Sancakoglu
Keyword(s):  
Thin Film ◽  
New Technology ◽  
Aerosol Deposition ◽  
Semiconductor Materials ◽  
Polymer Science ◽  
Structure Property ◽  
Thin Film Semiconductors ◽  
Type Semiconductor ◽  
New Perspective ◽  
Interest In Research

Especially with the development of nanotechnology and polymer science, interest in research and production of both efficient and lower-cost semiconductor thin film materials is increasing day by day. The use of nano-structured thin films for efficient use of solar cells in production of n-type semiconductor materials is one of the most important sources of energy and new-generation energy. Considering the indicated trends and energy requirements, it has been important to transfer this technology in detail regarding the surface technologies related to the semiconductor materials produced with thin film technologies instead of bulk materials. With this aim, this book chapter “Technological Background and Properties of Thin Film Semiconductors” includes a brief story about semiconductors, band gap theory, thin film applications, and besides traditional thin film processing methods finally a new technology called aerosol deposition technique which allows room temperature processing of several materials for semiconductor applications, respectively. It is thought that it will make important contributions to the relevant field and bring a new perspective and direct scientific research in “process-structure–property-performance” relation.

Precursor design and engineering for low-temperature deposition of gate dielectrics for thin film transistors

2011 ◽  
Vol 1287 ◽  
Author(s):  
Anupama Mallikarjunan ◽  
Laura M Matz ◽  
Andrew D Johnson ◽  
Raymond N Vrtis ◽  
Manchao Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Moisture Absorption ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Silicon Oxycarbide ◽  
Process Conditions ◽  
Structure Property ◽  
Oh Groups

ABSTRACTThe electrical and physical quality of gate and passivation dielectrics significantly impacts the device performance of thin film transistors (TFTs). The passivation dielectric also needs to act as a barrier to protect the TFT device. As low temperature TFT processing becomes a requirement for novel applications and plastic substrates, there is a need for materials innovation that enables high quality plasma enhanced chemical vapor deposition (PECVD) gate dielectric deposition. In this context, this paper discusses structure-property relationships and strategies for precursor development in silicon nitride, silicon oxycarbide (SiOC) and silicon oxide films. Experiments with passivation SiOC films demonstrate the benefit of a superior precursor (LkB-500) and standard process optimization to enable lower temperature depositions. For gate SiO2 deposition (that are used with polysilicon TFTs for example), organosilicon precursors containing different types and amounts of Si, C, O and H bonding were experimentally compared to the industry standard TEOS (tetraethoxysilane) at different process conditions and temperatures. Major differences were identified in film quality especially wet etch rate or WER (correlating to film density) and dielectric constant (k) values (correlating to moisture absorption). Gate quality SiO2 films can be deposited by choosing precursors that can minimize residual Si-OH groups and enable higher density stable moisture-free films. For e.g., the optimized precursor AP-LTO® 770 is clearly better than TEOS for low temperature PECVD depositions based on density, WER, k charge density (measured by flatband voltage or Vfb); and leakage and breakdown voltage (Vbd) measurements. The design and development of such novel precursors is a key factor to successfully enable manufacturing of advanced low temperature processed devices.

Study on Phases and Thermoelectric Properties of Bulk Fe4Sb12 and Fe3CoSb12 Prepared by Milling and Sintering

2011 ◽  
Vol 121-126 ◽  
pp. 1526-1529
Author(s):  
Ke Gao Liu ◽  
Jing Li
Keyword(s):  
Thermoelectric Properties ◽  
Impurity Phase ◽  
Semiconductor Materials ◽  
Thermal Constant ◽  
X Ray Diffraction ◽  
X Ray ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Type Semiconductor ◽  
P Type

Bulk Fe4Sb12 and Fe3CoSb12 were prepared by sintering at 600 °C. The phases of samples were analyzed by X-ray diffraction and their thermoelectric properties were tested by electric constant instrument and laser thermal constant instrument. Experimental results show that, the major phases of bulk samples are skutterudite with impurity phase FeSb2. The electric resistivities of the samples increase with temperature rising at 100~500 °C. The bulk samples are P-type semiconductor materials. The Seebeck coefficients of the bulk Fe4Sb12 are higher than those of bulk Fe3CoSb12 samples at 100~200 °C but lower at 300~500 °C. The power factor of the bulk Fe4Sb12 samples decreases with temperature rising while that of bulk Fe3CoSb12 samples increases with temperature rising at 100~500 °C. The thermal conductivities of the bulk Fe4Sb12 samples are relatively higher than those of and Fe3CoSb12, which maximum value is up to 0.0974 Wm-1K-1. The ZT value of bulk Fe3CoSb12 increases with temperature rising at 100~500 °C, the maximum value is up to 0.031.The ZT values of the bulk Fe4Sb12 samples are higher than those of bulk Fe3CoSb12 at 100~300 °C while lower at 400~500 °C.

Characteristics and Potential Application of Thermally Sprayed Thin Film Coatings

2000 ◽  
Author(s):  
M. Loch ◽  
G. Barbezat
Keyword(s):  
Thin Film ◽  
New Technology ◽  
Functional Coatings ◽  
Oxide Coatings ◽  
Film Coatings ◽  
Thin Film Coatings ◽  
Thermally Sprayed Coatings ◽  
Short Time ◽  
Thermally Sprayed ◽  
Sprayed Coatings

Abstract LPPS Thin Film is a new technology for the production of thin functional coatings. The coatings produced can fill the well known gap of coating thickness between conventional thin films (PVD, CVD and others) and conventional thermally sprayed coatings (Plasma, HVOF and others). The application is successful, if the advantages of the new technology (large areas can be dense coated within a very short time) are combined with the specific properties of thermally sprayed coatings to the benefit of the intended application. Beside the technology of LPPS Thin Film and it's characteristics the paper will summarise important properties of Alumina described in the literature and present some corresponding properties of Aluminium oxide coatings produced by LPPS Thin Film.

scholarly journals NEW TECHNOLOGY FOR HARDENING READY-MADE TOOLS IN AQUAEOUS DISPERSED MEDIA

2017 ◽  
Vol 23 (1) ◽  
pp. 87
Author(s):  
Alexander A. Shmatov ◽  
Ľubomír Šooš ◽  
Zdenko Krajný
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Solid Lubricant ◽  
New Technology ◽  
Aqueous Media ◽  
Hard Alloys ◽  
Refractory Materials ◽  
Structure And Properties ◽  
Refractory Compounds ◽  
Low Temperature Process

<p class="AMSmaintext"><span lang="EN-US">The new method for hardening ready-made steels, hard alloys and diamond tools is developed: low-temperature process for producing thin-film solid lubricant coatings by hydro chemical treatment in specially prepared aqueous media of nanosized hard refractory compounds and subsequent tempering. The main advantages of the method over known processes are presented. The principles for dispersion of refractory materials are formulated. The structure and properties of the obtained coatings are examined. <br /></span></p>

A novel industrial thin film deposition technology for sustainable CdTe photovoltaics

2012 ◽  
Vol 1447 ◽  
Author(s):  
P. Nozar ◽  
G. Mittica ◽  
S. Milita ◽  
C. Albonetti ◽  
F. Corticelli ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Deposition ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Cubic Phase ◽  
Pulsed Plasma ◽  
Grid Parity ◽  
Type Semiconductor ◽  
Pulsed Plasma Deposition ◽  
Quartz Substrates

ABSTRACTCdTe and CdS are emerging as the most promising materials for thin film photovoltaics in the quest of the achievement of grid parity. The major challenge for the advancement of grid parity is the achievement of high quality at the same time as low fabrication cost. The present paper reports the results of the new deposition technique, Pulsed Plasma Deposition (PPD), for the growth of the CdTe layers on CdS/ZnO/quartz and quartz substrates. The PPD method allows to deposit at low temperature. The optical band gap of deposited layers is 1.50 eV, in perfect accord with the value reported in the literature for the crystalline cubic phase of the CdTe.The films are highly crystalline with a predominant cubic phase, a random orientation of the grains of the film and have an extremely low surface roughness of 4.6±0.7 nm r.m.s.. The low roughness, compared to traditional thermal deposition methods (close space sublimation and vapour transport) permits the reduction of the active absorber and n-type semiconductor layers resulting in a dramatic reduction of material usage and the relative deposition issues like safety, deposition rate and ultimately cost

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