scholarly journals Ion Beam, Synchrotron Radiation, and Related Techniques in Biomedicine: Elemental Profiling of Hair

Author(s):  
Karen J. Cloete
2001 ◽  
Vol 695 ◽  
Author(s):  
Kazuhiro Kanda ◽  
Yutaka Shimizugawa ◽  
Yuichi Haruyama ◽  
Isao Yamada ◽  
Shinji Matsui ◽  
...  

ABSTRACTThe coordination of the carbon atoms in the diamond-like carbon (DLC) films formed by Ar gas cluster ion beam (GCIB) assisted deposition of fullerene was investigated using synchrotron radiation. Near-edge x-ray absorption fine structure (NEXAFS) spectra of the carbon K-edge of the DLC films formed by various methods were measured over the excitation energy range 275-320 eV, using synchrotron radiation. On the basis of the analysis of the peak corresponding the transition of the excitation electron from carbon 1s orbital to Φ orbital, relative sp2 contents of various DLC films were determined. The DLC films formed by Ar GCIB assisted fullerene deposition were found to consist of a high sp3 hybridized carbon.


2018 ◽  
Vol 44 (4) ◽  
pp. 320-323
Author(s):  
M. N. Drozdov ◽  
Yu. N. Drozdov ◽  
A. V. Novikov ◽  
P. A. Yunin ◽  
D. V. Yurasov

1991 ◽  
Vol 67 (5) ◽  
pp. 576-579 ◽  
Author(s):  
J. M. Bizau ◽  
D. Cubaynes ◽  
M. Richter ◽  
F. J. Wuilleumier ◽  
J. Obert ◽  
...  

1998 ◽  
Vol 5 (3) ◽  
pp. 1162-1165 ◽  
Author(s):  
H. Iwasaki ◽  
Y. Nakayama ◽  
K. Ozutsumi ◽  
Y. Yamamoto ◽  
Y. Tokunaga ◽  
...  

A compact superconducting storage ring (0.575 GeV and 300 mA) with a racetrack microtron injection system was installed at Ritsumeikan University and has been operated successfully since April 1996. As the radius of the circular electron orbit is small (0.5 m), it is possible to use a radiation beam of relatively high photon flux at a short distance from the source point. Beamlines have been constructed including those for XAFS, soft X-ray spectroscopy, VUV spectroscopy, fluorescent X-ray analysis, soft X-ray microscopy, X-ray diffraction/scattering and photoelectron spectroscopy; the photoelectron spectrometer is combined with an ion-beam-scattering spectrometer to obtain information both on the electronic states and on the atomic arrangements of a solid surface. In addition there are two beamlines, one for LIGA exposure and the other for synchrotron radiation ablation, which are devoted to producing new devices and materials. The synchrotron radiation facility is open not only to users in the University but also to researchers in industry, governmental institutions and other universities.


2011 ◽  
Vol 1 (MEDSI-6) ◽  
Author(s):  
R. Baker ◽  
R. Barrett ◽  
Y. Dabin ◽  
J. Gregoire ◽  
G. Malandrino ◽  
...  

European Synchrotron Radiation Facility (ESRF) in-house designed Kirkpatrick–Baez (KB) focusing systems have been extensively used for high efficiency beam focusing over the past years. More recently however, increasing interest in nanofocusing techniques has directed our development efforts towards more compact, higher stability designs for dynamic focusing systems in which the optimization of numerous parameters enables mirror bending approaching its mechanical limits. Simultaneously, progress in fixed focus mirror fabrication techniques – notably ion beam figuring, differential deposition and elastic emission machining – now make the fabrication of highly elliptical, fixed focus X-ray optics an interesting option. This has simplified conception (no bending mechanics) which in turn has led to the design of miniaturized KBs.A general overview of these recent developments in both dynamic bending and fixed focus KB systems is presented.


Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.


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