scholarly journals Susceptibility of Group-IV and III-V Semiconductor-Based Electronics to Atmospheric Neutrons Explored by Geant4 Numerical Simulations

2018 ◽  
Author(s):  
Daniela Munteanu ◽  
Jean-Luc Autran
Keyword(s):  
Numerical Simulations ◽  
Group Iv

Luminescence from individual dislocations in II-VI and III-V semiconductors

1991 ◽  
Vol 49 ◽  
pp. 834-835
Author(s):  
J W Steeds
Keyword(s):  
Group Iv ◽  
Luminescence Properties ◽  
Carrier Recombination ◽  
Transmission Electron ◽  
Wide Range ◽  
Basic Physics ◽  
Semiconducting Compounds ◽  
Diamond Group ◽  
Non Destructive ◽  
Technological Significance

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

Saturation mechanism and generated viscosity in gravito-turbulent accretion disks

2020 ◽  
Vol 640 ◽  
pp. A53
Author(s):  
L. Löhnert ◽  
S. Krätschmer ◽  
A. G. Peeters
Keyword(s):  
Growth Rate ◽  
Numerical Simulations ◽  
Accretion Disks ◽  
Gravitational Instability ◽  
Turbulent Viscosity ◽  
Radial Distance ◽  
Maximum Growth ◽  
Wave Number ◽  
Radiative Cooling ◽  
Mixing Length

Here, we address the turbulent dynamics of the gravitational instability in accretion disks, retaining both radiative cooling and irradiation. Due to radiative cooling, the disk is unstable for all values of the Toomre parameter, and an accurate estimate of the maximum growth rate is derived analytically. A detailed study of the turbulent spectra shows a rapid decay with an azimuthal wave number stronger than ky−3, whereas the spectrum is more broad in the radial direction and shows a scaling in the range kx−3 to kx−2. The radial component of the radial velocity profile consists of a superposition of shocks of different heights, and is similar to that found in Burgers’ turbulence. Assuming saturation occurs through nonlinear wave steepening leading to shock formation, we developed a mixing-length model in which the typical length scale is related to the average radial distance between shocks. Furthermore, since the numerical simulations show that linear drive is necessary in order to sustain turbulence, we used the growth rate of the most unstable mode to estimate the typical timescale. The mixing-length model that was obtained agrees well with numerical simulations. The model gives an analytic expression for the turbulent viscosity as a function of the Toomre parameter and cooling time. It predicts that relevant values of α = 10−3 can be obtained in disks that have a Toomre parameter as high as Q ≈ 10.

ISOMER-SHIFT SYSTEMATICS OF 57Co IMPLANTED IN GROUP IV SEMICONDUCTORS

1976 ◽  
Vol 37 (C6) ◽  
pp. C6-893-C6-896 ◽  
Author(s):  
G. WEYER ◽  
G. GREBE ◽  
A. KETTSCHAU ◽  
B. I. DEUTCH ◽  
A. NYLANDSTED LARSEN ◽  
...  
Keyword(s):  
Isomer Shift ◽  
Group Iv ◽  
Group Iv Semiconductors

CHARACTERIZATION OF SPLASH-PLATE ATOMIZERS USING NUMERICAL SIMULATIONS

2007 ◽  
Vol 17 (4) ◽  
pp. 347-380 ◽  
Author(s):  
Mohammad P. Fard ◽  
Denise Levesque ◽  
Stuart Morrison ◽  
Nasser Ashgriz ◽  
J. Mostaghimi
Keyword(s):  
Numerical Simulations
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