scholarly journals Reliability Prediction Considering Multiple Failure Mechanisms

2017 ◽  
Author(s):  
Joseph B. Bernstein
2013 ◽  
Vol 411-414 ◽  
pp. 549-554 ◽  
Author(s):  
Xing Jian Shan ◽  
Min Huang ◽  
Jun Yi

Based on the American NSWC-10 criterion, we analyzed the mechanical standard components failure mechanisms and failure modes, through which inducted their common methods and calculation models of reliability prediction according to their specific characteristics. Furthermore, they have been transformed into the metric system standards used in China. And also the development of the softwares interface, algorithm, connection and data preservation were accomplished utilizing C# development language in the integrated development environment of Visual Studio to realize the reliability prediction of mechanical standard components.


Author(s):  
ADITHYA THADURI ◽  
A. K. VERMA ◽  
GOPIKA VINOD ◽  
M. G. RAJESH ◽  
UDAY KUMAR

Conventionally, reliability prediction of electronic components is carried out using standard handbooks such as MIL STD 217 plus, Telcordia, etc. But these methods fail to provide a realistic estimate of reliability for upcoming technologies. Currently, electronic reliability prediction is moving towards applying the Physics of Failure approach which considers information on process, technology, fabrication techniques, materials used, etc. Industries employ different technologies like CMOS, BJT and BICMOS for various applications. The possibility of chance of failure at interdependencies of materials, processes, and characteristics under operating conditions is the major concern which affects the performance of the devices. They are characterized by several failure mechanisms at various stages such as wafer level, interconnection, etc. For this, the dominant failure mechanisms and stress parameters needs to be identified. Optocouplers are used in input protection of several instrumentation systems providing safety under over-stress conditions. Hence, there is a need to study the reliability and safety aspects of optocouplers. Design of experiments is an efficient and prominent methodology for finding the reliability of the item, as the experiment provides a proof for the hypothesis under consideration. One of the important techniques involved is Taguchi method which is employed for finding the prominent failure mechanisms in semiconductor devices. By physics of failure approach, the factors that are affecting the performance on both environmental and electrical parameters with stress levels for optocouplers are identified. By constructing a 2-stage Taguchi array with these parameters where output parameters decides the effect of top two dominant failure mechanisms and their extent of chance of failure can be predicted. This analysis helps us in making the appropriate modifications considering both the failure mechanisms for the reliability growth of these devices. This paper highlights the application of design of experiments for finding the dominant failure mechanisms towards using physics of failure approach in electronic reliability prediction of optocouplers for application of instrumentation.


Author(s):  
ADITHYA THADURI ◽  
A. K. VERMA ◽  
V. GOPIKA ◽  
RAJESH GOPINATH ◽  
UDAY KUMAR

Due to several advancements in the technology trends in electronics, the reliability prediction by the constant failure methods and standards no longer provide accurate time to failure. The physics of failure methodology provides a detailed insight on the operation, failure point location and causes of failure for old, existing and newly developed components with consideration of failure mechanisms. Since safety is a major criteria for the nuclear industries, the failure modeling of advanced custom made critical components that exists on signal conditioning module are need to be studied with higher confidence. One of the components, constant fraction discriminator, is the critical part at which the failure phenomenon and modeling by regression is studied in this paper using physics of failure methodology.


Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.


Author(s):  
Robert C. Cieslinski ◽  
H. Craig Silvis ◽  
Daniel J. Murray

An understanding of the mechanical behavior polymers in the ductile-brittle transition region will result in materials with improved properties. A technique has been developed that allows the realtime observation of dynamic plane stress failure mechanisms in the transmission electron microscope. With the addition of a cryo-tensile stage, this technique has been extented to -173°C, allowing the observation of deformation during the ductile-brittle transition.The technique makes use of an annealed copper cartridge in which a thin section of bulk polymer specimen is bonded and plastically deformed in tension in the TEM using a screw-driven tensile stage. In contrast to previous deformation studies on solvent-cast films, this technique can examine the frozen-in morphology of a molded part.The deformation behavior of polypropylene and polypropylene impact modified with EPDM (ethylene-propylene diene modified) and PE (polyethylene) rubbers were investigated as function of temperature and the molecular weight of the impact modifier.


2018 ◽  
Vol 18 (3) ◽  
pp. 250-259 ◽  
Author(s):  
Yangwoo Seo ◽  
Kyeshin Lee ◽  
Younho Lee ◽  
Jeyong Kim

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