scholarly journals Templated Si-based Nanowires via Solid-Liquidsolid (SLS) and Vapor-Liquid-Solid (VLS) Growth: Novel Growth Mode, Synthesis, Morphology Control, Characteristics, and Electrical Transport

10.5772/8844 ◽  
2010 ◽  
Author(s):  
Jae Ho ◽  
Robert E.
Keyword(s):  
Electrical Transport ◽  
Morphology Control ◽  
Growth Mode ◽  
Vapor Liquid Solid ◽  
Vls Growth ◽  
Vapor Liquid

scholarly journals Spiral Deposition with Alternating Indium Composition in Growing an InGaN Nanoneedle with the Vapor-Liquid-Solid Growth Mode

2012 ◽  
Vol 2012 ◽  
pp. 1-7
Author(s):  
Wen-Ming Chang ◽  
Che-Hao Liao ◽  
Chih-Yen Chen ◽  
Chieh Hsieh ◽  
Tsung-Yi Tang ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Growth Direction ◽  
Indium Content ◽  
Dark Field ◽  
Growth Mode ◽  
Dimensional Structure ◽  
Vapor Liquid Solid ◽  
Annular Dark Field ◽  
Vls Growth ◽  
Vapor Liquid

The spiral deposition of InGaN with a quasiperiodical distribution of indium content along the growth direction for forming InGaN nanoneedles (NNs) with the vapor-liquid-solid (VLS) growth mode is demonstrated. The VLS growth is implemented by using Au nanoparticles (NPs) as the catalyst in metalorganic chemical vapor deposition. The Au NPs on a GaN template are generated through pulsed laser irradiation. The observation of spiral deposition is based on the analyses of the scanning results in the high angle annular dark field and energy dispersive X-ray measurements of transmission electron microscopy. In the measurements, the composition variations along and perpendicular to the growth direction (thec-axis) are illustrated. The alternating indium content along the growth direction is attributed to a quasiperiodically pulsed behavior of indium supersaturation process in the melted Au NP at the top of an InGaN NN. The spiral deposition of InGaN is due to the formation of an NN at the location of an Au NP with a screw-type dislocation beneath in the GaN template, at which the growth of a quasi-one-dimensional structure can be easily initiated.

VLS Growth of Si nanowhiskers on a H-terminated Si{111} surface

1998 ◽  
Vol 536 ◽  
Author(s):  
N. Ozaki ◽  
Y. Ohno ◽  
S. Takeda ◽  
M. Hirata
Keyword(s):  
High Pressure ◽  
Growth Condition ◽  
Growth Mechanism ◽  
Quantum Confinement ◽  
Critical Value ◽  
Extended Defects ◽  
Vapor Liquid Solid ◽  
Minimum Diameter ◽  
Vls Growth ◽  
Vapor Liquid

AbstractWe have grown Si nanowhiskers on a Si{1111} surface via the vapor-liquid-solid (VLS) mechanism. The minimum diameter of the crystalline is 3nm and is close to the critical value for the effect of quantum confinement. We have found that many whiskers grow epitaxially or non-epitaxially on the substrate along the 〈112〉 direction as well as the 〈111〉 direction.In our growth procedure, we first deposited gold on a H-terminated Si{111} surface and prepared the molten catalysts of Au and Si at 500°C. Under the flow of high pressure silane gas, we have succeeded in producing the nanowhiskers without any extended defects. We present the details of the growth condition and discuss the growth mechanism of the nanowhiskers extending along the 〈112〉 direction.

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

Vapor-liquid-solid Growth of III-Nitride Nanowires and Heterostructures by Metal-Organic Chemical Vapor Deposition

2004 ◽  
Vol 831 ◽  
Author(s):  
J. Su ◽  
M. Gherasimova ◽  
G. Cui ◽  
J. Han ◽  
S. Lim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Mesoporous Molecular Sieves ◽  
Organic Chemical ◽  
Vapor Liquid Solid ◽  
Metal Organic ◽  
Vls Growth ◽  
Organic Chemical Vapor Deposition ◽  
Vapor Liquid

ABSTRACTWe report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E2 phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process.

Morphology control of GaN nanowires by vapor-liquid-solid growth

2008 ◽  
Vol 5 (9) ◽  
pp. 3001-3003 ◽  
Author(s):  
Y. Inoue ◽  
A. Tajima ◽  
A. Ishida ◽  
H. Mimura
Keyword(s):  
Morphology Control ◽  
Vapor Liquid Solid ◽  
Gan Nanowires ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

scholarly journals Synthesis of Multiwall Boron Nitride (BN) Nanotubes by a PVD Method Based on Vapor–Liquid–Solid Growth

Materials ◽  
2020 ◽  
Vol 13 (4) ◽  
pp. 915 ◽  
Author(s):  
Hao Guo ◽  
Yonggang Xu ◽  
Hetuo Chen ◽  
Zhengjuan Wang ◽  
Xiaojian Mao ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Liquid Drop ◽  
Synthesis Temperature ◽  
Vapor Liquid Solid ◽  
Vls Growth ◽  
Typical Length ◽  
Bn Nanotubes ◽  
Vapor Liquid

Multiwall boron nitride (BN) nanotubes were synthesized by a novel physical vapor deposition (PVD) method, in which the BN nanotubes grow on a compact substrate composed of AlN, γ-Al2O3, Y2O3, and carbon powders. The obtained BN nanotubes assemble in an orderly manner with a typical length of over one millimeter and a diameter of one-hundred nanometers. The hollow multiwall tubes have a spherical tip, which is presumed to be a liquid drop at the synthesis temperature, indicating the vapor–liquid–solid (VLS) growth mechanism.

Vapor–Liquid–Solid (VLS) Growth of NiCl2 Nanotubes via Reactive Gas Laser Ablation

2002 ◽  
Vol 14 (15) ◽  
pp. 1075 ◽  
Author(s):  
Y. Rosenfeld Hacohen ◽  
R. Popovitz-Biro ◽  
E. Grunbaum ◽  
Y. Prior ◽  
R. Tenne
Keyword(s):  
Laser Ablation ◽  
Vapor Liquid Solid ◽  
Gas Laser ◽  
Vls Growth ◽  
Reactive Gas ◽  
Vapor Liquid

Realization ofIn SituDoped n-Type and p-Type Si-Microprobe Array by Selective Vapor-Liquid-Solid (VLS) Growth Method

2005 ◽  
Vol 44 (4B) ◽  
pp. 2161-2165 ◽  
Author(s):  
Md. Shofiqul Islam ◽  
Hiroshi Ishino ◽  
Takeshi Kawano ◽  
Hidekuni Takao ◽  
Kazuaki Sawada ◽  
...  
Keyword(s):  
Vapor Liquid Solid ◽  
Growth Method ◽  
Vls Growth ◽  
P Type ◽  
Vapor Liquid
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