scholarly journals Pseudo Floating-Gate and Reverse Signal Flow

10.5772/7403 ◽  
2009 ◽  
Author(s):  
Omid Mirmotahari ◽  
Yngvar Berg
Keyword(s):  
Floating Gate ◽  
Signal Flow ◽  
Reverse Signal

scholarly journals DESIGN OF ANALOG CIRCUITS USING PSEUDO FLOATING GATE

2013 ◽  
pp. 95-97
Author(s):  
SONALEE P. SURYAWANSHI ◽  
MONICA V. MANKAR
Keyword(s):  
Circuit Design ◽  
Analog Circuits ◽  
Analog Circuit ◽  
Filter Design ◽  
Floating Gate ◽  
Control Signal ◽  
Analog Circuit Design ◽  
Flow Conditions ◽  
Signal Flow

In this paper we present pseudo floating gate and its bidirectional property. Inverter also can be implemented using bidirectional property. The inverter can be made bidirectional simply by interchanging vdd and gnd and no need to add any circuitry or any amplifier. We are using this inverter to implement the differentiator and integrator. We are first implementing inverter using pseudo floating gate. The bidirectionality of the gate is further evolved to be able to control signal flow conditions. And finally using this inverter we are implementing differentiator and integrator. Typical applications are in filter design and IO ports in ICs. Linearity and AC simulations are presented to show the good properties and versatility suited for Bi-directional analog circuit design.

Carrier Profiling of the 10-nm-order Structure in a 3D Flash Memory Cell Using Scanning Nonlinear Dielectric Microscopy

2019 ◽  
Author(s):  
Jun Hirota ◽  
Ken Hoshino ◽  
Tsukasa Nakai ◽  
Kohei Yamasue ◽  
Yasuo Cho
Keyword(s):  
Spatial Resolution ◽  
Flash Memory ◽  
Analytical Techniques ◽  
Memory Cell ◽  
Memory Device ◽  
Floating Gate ◽  
Order Structure ◽  
Carrier Distribution ◽  
Nonlinear Dielectric ◽  
Flash Memory Cell

Abstract In this paper, the authors report their successful attempt to acquire the scanning nonlinear dielectric microscopy (SNDM) signals around the floating gate and channel structures of the 3D Flash memory device, utilizing the custom-built SNDM tool with a super-sharp diamond tip. The report includes details of the SNDM measurement and process involved in sample preparation. With the super-sharp diamond tips with radius of less than 5 nm to achieve the supreme spatial resolution, the authors successfully obtained the SNDM signals of floating gate in high contrast to the background in the selected areas. They deduced the minimum spatial resolution and seized a clear evidence that the diffusion length differences of the n-type impurity among the channels are less than 21 nm. Thus, they concluded that SNDM is one of the most powerful analytical techniques to evaluate the carrier distribution in the superfine three dimensionally structured memory devices.

Investigations of Leakage Paths in Sub-0.35μm DRAM Products Using Advanced Focused Ion Beam Techniques

1998 ◽  
Author(s):  
H. Lorenz ◽  
C. Engel
Keyword(s):  
Focused Ion Beam ◽  
Cell Function ◽  
Dielectric Breakdown ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Floating Gate ◽  
Leakage Path ◽  
Contrast Technique ◽  
Voltage Contrast

Abstract Due to the continuously decreasing cell size of DRAMs and concomitantly diminishing thickness of some insulating layers new failure mechanisms appear which until now had no significance for the cell function. For example high resistance leakage paths between closely spaced conductors can lead to retention problems. These are hard to detect by electrical characterization in a memory tester because the involved currents are in the range of pA. To analyze these failures we exploit the very sensitive passive voltage contrast of the Focused Ion Beam Microscope (FIB). The voltage contrast can further be enhanced by in-situ FIB preparations to obtain detailed information about the failure mechanism. The first part of this paper describes a method to detect a leakage path between a borderless contact on n-diffusion and an adjacent floating gate by passive voltage contrast achieved after FIB circuit modification. In the second part we will demonstrate the localization of a DRAM trench dielectric breakdown. In this case the FIB passive voltage contrast technique is not limited to the localization of the failing trench. We can also obtain the depth of the leakage path by selective insitu etching with XeF2 stopped immediately after a voltage contrast change.

Floating Gate Memory Based on Ferritin Nanodots with High-kGate Dielectrics

2009 ◽  
Vol 48 (4) ◽  
pp. 04C153 ◽  
Author(s):  
Kosuke Ohara ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki ◽  
Ichiro Yamashita ◽  
Toshitake Yaegashi ◽  
...  
Keyword(s):  
Floating Gate ◽  
Floating Gate Memory

scholarly journals Single-Poly Floating-Gate Memory Cell Options for Analog Neural Networks

2021 ◽  
pp. 108062
Author(s):  
Maksym Paliy ◽  
Tommaso Rizzo ◽  
Piero Ruiu ◽  
Sebastiano Strangio ◽  
Giuseppe Iannaccone
Keyword(s):  
Neural Networks ◽  
Memory Cell ◽  
Floating Gate ◽  
Floating Gate Memory ◽  
Analog Neural Networks

A Floating-Gate-Based Four-Channel Reconfigurable Analog Front-End Integrated Circuit

2021 ◽  
Author(s):  
Zu-Jia Lo ◽  
Bipasha Nath ◽  
Yuan-Chuan Wang ◽  
Yun-Jie Huang ◽  
Hui-Chun Huang ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Floating Gate ◽  
Front End ◽  
Analog Front End
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