scholarly journals Electronic Properties of Carbon Nanostructures

Author(s):  
Jan Smotlacha ◽  
Richard Pincak
2017 ◽  
Vol 95 (19) ◽  
Author(s):  
Francisco Iago Lira Passos ◽  
José Gadelha da Silva Filho ◽  
Aldilene Saraiva-Souza ◽  
Antônio Gomes Souza Filho ◽  
Vincent Meunier ◽  
...  

2016 ◽  
Vol 18 (5) ◽  
pp. 4154-4165 ◽  
Author(s):  
Lambrini Sygellou ◽  
Sofia Kakogianni ◽  
Aikaterini K. Andreopoulou ◽  
Krystallia Theodosiou ◽  
George Leftheriotis ◽  
...  

Energy level control of perfluorophenyl functionalized quinolines by hybridization with carbon nanostructures for solar cell devices.


2015 ◽  
Vol 6 ◽  
pp. 480-491 ◽  
Author(s):  
Alberto Milani ◽  
Matteo Tommasini ◽  
Valeria Russo ◽  
Andrea Li Bassi ◽  
Andrea Lucotti ◽  
...  

Graphene, nanotubes and other carbon nanostructures have shown potential as candidates for advanced technological applications due to the different coordination of carbon atoms and to the possibility of π-conjugation. In this context, atomic-scale wires comprised of sp-hybridized carbon atoms represent ideal 1D systems to potentially downscale devices to the atomic level. Carbon-atom wires (CAWs) can be arranged in two possible structures: a sequence of double bonds (cumulenes), resulting in a 1D metal, or an alternating sequence of single–triple bonds (polyynes), expected to show semiconducting properties. The electronic and optical properties of CAWs can be finely tuned by controlling the wire length (i.e., the number of carbon atoms) and the type of termination (e.g., atom, molecular group or nanostructure). Although linear, sp-hybridized carbon systems are still considered elusive and unstable materials, a number of nanostructures consisting of sp-carbon wires have been produced and characterized to date. In this short review, we present the main CAW synthesis techniques and stabilization strategies and we discuss the current status of the understanding of their structural, electronic and vibrational properties with particular attention to how these properties are related to one another. We focus on the use of vibrational spectroscopy to provide information on the structural and electronic properties of the system (e.g., determination of wire length). Moreover, by employing Raman spectroscopy and surface enhanced Raman scattering in combination with the support of first principles calculations, we show that a detailed understanding of the charge transfer between CAWs and metal nanoparticles may open the possibility to tune the electronic structure from alternating to equalized bonds.


2012 ◽  
Vol 3 ◽  
pp. 360-367 ◽  
Author(s):  
Luca Camilli ◽  
Manuela Scarselli ◽  
Silvano Del Gobbo ◽  
Paola Castrucci ◽  
Eric Gautron ◽  
...  

We have taken advantage of the native surface roughness and the iron content of AISI-316 stainless steel to grow multiwalled carbon nanotubes (MWCNTs) by chemical vapour deposition without the addition of an external catalyst. The structural and electronic properties of the synthesized carbon nanostructures have been investigated by a range of electron microscopy and spectroscopy techniques. The results show the good quality and the high graphitization degree of the synthesized MWCNTs. Through energy-loss spectroscopy we found that the electronic properties of these nanostructures are markedly different from those of highly oriented pyrolytic graphite (HOPG). Notably, a broadening of the π-plasmon peak in the case of MWCNTs is evident. In addition, a photocurrent was measured when MWCNTs were airbrushed onto a silicon substrate. External quantum efficiency (EQE) and photocurrent values were reported both in planar and in top-down geometry of the device. Marked differences in the line shapes and intensities were found for the two configurations, suggesting that two different mechanisms of photocurrent generation and charge collection are in operation. From this comparison, we are able to conclude that the silicon substrate plays an important role in the production of electron–hole pairs.


2021 ◽  
Vol 14 ◽  
Author(s):  
A. Guillermo Bracamonte ◽  
W. Hutchinson

: In this communication we discuss the particular electronic and quantum properties from graphene and carbon allotropes to highly conjugated carbon chemical structures from recent research. Moreover, the chemical modifications of these types of materials were analyzed against the concept of their inert properties, thus identifying their surfaces could be modified to join different properties, functionalities, and couple electronic effects, among others. Their versatility was shown based on simple chemical reactions in controlled and targeted conditions of synthesis. Variable designs could be tuned from proof of concepts to functional materials for targeted applications. In addition, it was discussed a proof of concept for Electron Transfer (ET) applications to show their electronic properties. Finally, it was analyzed the use from highly conjugated chemical structures to higher hierarchical ordered carbon structures, carbon nanotubes, graphene and carbon allotropes in electron, and opto-responsive metamaterials. Thus, new insights into multi-modal characteristics of materials were discussed.


2021 ◽  
Vol 11 (6) ◽  
pp. 2490
Author(s):  
Simone Adorinni ◽  
Maria C. Cringoli ◽  
Siglinda Perathoner ◽  
Paolo Fornasiero ◽  
Silvia Marchesan

The family of carbon nanostructures comprises several members, such as fullerenes, nano-onions, nanodots, nanodiamonds, nanohorns, nanotubes, and graphene-based materials. Their unique electronic properties have attracted great interest for their highly innovative potential in nanomedicine. However, their hydrophobic nature often requires organic solvents for their dispersibility and processing. In this review, we describe the green approaches that have been developed to produce and functionalize carbon nanomaterials for biomedical applications, with a special focus on the very latest reports.


Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.


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