scholarly journals Space Charge–Limited Current Model for Polymers

10.5772/63527 ◽  
2016 ◽  
Author(s):  
Syed A. Moiz ◽  
Iqbal A. Khan ◽  
Waheed A. Younis ◽  
Khasan S. Karimov
Keyword(s):  
Space Charge ◽  
Current Model ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

scholarly journals Study of Radiative Defects Using Current-Voltage Characteristics in ZnO Rods Catalytically Grown on 4H-p-SiC

2010 ◽  
Vol 2010 ◽  
pp. 1-5 ◽  
Author(s):  
N. Bano ◽  
I. Hussain ◽  
O. Nur ◽  
M. Willander ◽  
P. Klason
Keyword(s):  
Space Charge ◽  
Deep Level ◽  
Current Model ◽  
Current Transport ◽  
Space Charge Limited Current ◽  
Violet Emission ◽  
Limited Current ◽  
Current Voltage ◽  
Zno Rods ◽  
Space Charge Limited

High-quality ZnO rods were grown by the vapour-liquid-solid (VLS) technique on 4H-p-SiC substrate. The current transport mechanisms of the diodes at room temperature (RT) have been explained in term of the space-charge-limited current model based on the energy band diagram of ZnO rods/4H-p-SiC heterostructure. The tunneling mechanism via deep-level states was found to be the main conduction process at low-applied voltage but at trap-filled limit voltage all traps are filled and the space-charge-limited current conduction dominated the current transport. From the RT current voltage measurements, the energy of the deep level trap and the trap concentration were obtained as  eV and , respectively. The deep level states observed correspond to zinc interstitial ( ), responsible for the violet emission.

Space-charge-limited current in GaAs

1966 ◽  
Vol 2 (7) ◽  
pp. 282
Author(s):  
A.M. Phahle ◽  
K.C. Kao ◽  
J.H. Calderwood
Keyword(s):  
Space Charge ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Study of Electron Transport in a-Si:H p-i-n Diodes: Use of the Transient Space-Charge-Limited-Current Technique

1995 ◽  
Vol 377 ◽  
Author(s):  
G. J. Adriaenssens ◽  
B. Yan ◽  
A. Eliat
Keyword(s):  
Space Charge ◽  
Conduction Band Edge ◽  
Time Range ◽  
Space Charge Limited Current ◽  
Transport Parameters ◽  
Limited Current ◽  
Emission Time ◽  
Time Regime ◽  
Carrier Extraction ◽  
Space Charge Limited

ABSTRACTA full and detailed transient space-charge-limited current (T-SCLC) study of a-Si:H p-i-n diodes has been carried out in the time range from 108s to 10s. In the short-time regime, general features of T-SCLC such as the current cusp and the carrier extraction period were observed, and related transport parameters were deduced. Electron emission from deep states was studied by measuring the current transients well beyond the extraction time. The emission time is thermally activated at temperatures higher than 250K and levels off at lower temperatures. The high temperature behaviour places the upper edge of the deep states at 0.42–0.52eV below the conduction band edge, and the attempt-to-escape frequency in the range of 1011-1013Hz. An observed shift of emission time with light intensity is attributed to defect relaxation.

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