scholarly journals Potential Exposure and Risk Associated with Metal Contamination in Foods

10.5772/62683 ◽  
2016 ◽  
Author(s):  
Luciana M. Coelho ◽  
Diego R. Pessoa ◽  
Kenia M. Oliveira ◽  
Priscila A. R. de Sousa ◽  
Lícia A. da Silva ◽  
...  
Keyword(s):  
Metal Contamination ◽  
Potential Exposure

53. Potential Exposure-Based Worker Classification System

1999 ◽  
Author(s):  
W.G. Tankersley ◽  
D.M. West ◽  
D.L. Crager
Keyword(s):  
Classification System ◽  
Potential Exposure

Normalisation method for evaluation of metal contamination of soil

2006 ◽  
Vol 34 (1) ◽  
pp. 263-266
Author(s):  
József Prokisch ◽  
Ildikó Szegvári ◽  
Éva Széles ◽  
Béla Kovács ◽  
Zoltán Győri
Keyword(s):  
Metal Contamination ◽  
Normalisation Method

ASSESSMENT OF METAL CONTAMINATION AND ECOLOGICAL RISK IN URBAN SOILS SITUATED NEAR A METALLURGICAL COMPLEX

2017 ◽  
Vol 16 (7) ◽  
pp. 1623-1630
Author(s):  
Maria-Alexandra Hoaghia ◽  
Erika-Andrea Levei ◽  
Oana Cadar ◽  
Marin Senila ◽  
Gheorghe-Gavrila Hognogi
Keyword(s):  
Ecological Risk ◽  
Metal Contamination ◽  
Urban Soils

ASSESSMENT OF HEAVY METAL CONTAMINATION AND IMPACT ON SURFACE WATERS IN IASI CITY, ROMANIA

2009 ◽  
Vol 8 (6) ◽  
pp. 1541-1551
Author(s):  
Corneliu Horaicu ◽  
Florea Cornel Gabrian ◽  
Irina Grozavu ◽  
Catalin Constantin Calu ◽  
Monica Horaicu ◽  
...  
Keyword(s):  
Heavy Metal ◽  
Surface Waters ◽  
Metal Contamination ◽  
Heavy Metal Contamination

Method of Detecting Trace Metal Contamination in Thick-Film SOI Device

2005 ◽  
Author(s):  
Yasunori Goto ◽  
Hiroomi Eguchi ◽  
Masaru Iida
Keyword(s):  
Trace Metal ◽  
Thick Film ◽  
Metal Contamination ◽  
Semiconductor Device ◽  
Trace Element Analysis ◽  
Silicon On Insulator ◽  
Element Analysis ◽  
Trace Metal Contamination ◽  
Trace Metal Elements ◽  
Output Characteristics

Abstract In the automotive IC using thick-film silicon on insulator (SOI) semiconductor device, if the gettering capability of a SOI wafer is inadequate, electrical characteristics degradation by metal contamination arises and the yield falls. At this time, an automotive IC was made experimentally for evaluation of the gettering capability as one of the purposes. In this IC, one of the output characteristics varied from the standard, therefore failure analysis was performed, which found trace metal elements as one of the causes. By making full use of 3D perspective, it is possible to fabricate a site-specific sample into 0.1 micrometre in thickness without missing a failure point that has very minute quantities of contaminant in a semiconductor device. Using energy dispersive X-ray, it is possible to detect trace metal contamination at levels 1E12 atoms per sq cm. that are conventionally detected only by trace element analysis.

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