scholarly journals Semiconductor Optical Amplifier (SOA)–Based Amplification of Intensity-Modulated Optical Pulses — Deterministic Timing Jitter and Pulse Peak Power Equalization Analysis

10.5772/61712 ◽  
2015 ◽  
Author(s):  
T. Alexoudi ◽  
G.T. Kanellos ◽  
S. Dris ◽  
D. Kalavrouziotis ◽  
P. Bakopoulos ◽  
...  
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Peak Power ◽  
Optical Amplifier ◽  
Timing Jitter ◽  
Optical Pulses ◽  
Intensity Modulated ◽  
Pulse Peak Power ◽  
Power Equalization ◽  
Pulse Peak

Timing Jitter of SOA-amplified intensity modulated optical pulses

2012 ◽  
Author(s):  
T. Alexoudi ◽  
S. Dris ◽  
D. Kalavrouziotis ◽  
P. Bakopoulos ◽  
A. Miliou ◽  
...  
Keyword(s):  
Timing Jitter ◽  
Optical Pulses ◽  
Intensity Modulated

Promotion of pulse peak power by halving the repetition rate based on a vector soliton

2020 ◽  
Vol 45 (7) ◽  
pp. 1635
Author(s):  
Shijie Wang ◽  
Lei Liao ◽  
Yingbin Xing ◽  
Haiqing Li ◽  
Jinggang Peng ◽  
...  
Keyword(s):  
Repetition Rate ◽  
Peak Power ◽  
Pulse Peak Power ◽  
Pulse Peak ◽  
Vector Soliton

COMPARISON OF MONOLITHIC PASSIVELY MODE-LOCKED LASERS USING In(Ga)As QUANTUM DOT OR QUANTUM WELL MATERIALS GROWN ON GaAs SUBSTRATES

2011 ◽  
Vol 20 (03) ◽  
pp. 713-725 ◽  
Author(s):  
M. T. CROWLEY ◽  
N. PATEL ◽  
D. MURRELL ◽  
Y.-C. XIN ◽  
A. STINTZ ◽  
...  
Keyword(s):  
Quantum Well ◽  
Peak Power ◽  
Edge Density ◽  
Single Quantum ◽  
Optical Pulses ◽  
Single Quantum Well ◽  
High Pulse ◽  
Pulse Peak ◽  
5 Ghz ◽  
Mode Locked Lasers

In this paper, a technology comparison between monolithic passively mode-locked lasers (MLLs) fabricated from 1.24 μm InAs dots-in-a-Well (DWELL) and 1.25 μm InGaAs single quantum well (SQW) structures grown using elemental source molecular beam epitaxy (MBE) is presented. 5 GHz optical pulses with sub-picosecond RMS jitter, high pulse peak power (1W) and narrow pulse width (< 10 ps) are typical of these monolithic two-section InAs DWELL passive MLLs. An InGaAs single quantum well MLL with the 42% indium is shown to exhibit a superior high-temperature performance. Compared with the typical operating range of the InAs DWELL devices (<60°C), the operation is in excess of 100 °C and is particularly attractive for clocking applications in next generation microprocessors. Based on an 8-band k . p analysis the reduction in the band edge density of states for such a quantum well is discussed.

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