scholarly journals Silicon Avalanche Based Light Emitting Diodes and Their Potential Integration into CMOS and RF Integrated Circuit Technology

10.5772/58968 ◽  
2014 ◽  
Author(s):  
Kaikai Xu ◽  
Weifeng Sun ◽  
Kingsley A. Ogudo ◽  
Lukas W. Snyman ◽  
Jean-Luc Polleux ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Circuit Technology ◽  
Potential Integration

III-V photonic integrated circuit with waveguide-coupled light-emitting diodes and WSi superconducting single-photon detectors

2019 ◽  
Vol 115 (8) ◽  
pp. 081105 ◽  
Author(s):  
Corey McDonald ◽  
Galan Moody ◽  
Sae Woo Nam ◽  
Richard P. Mirin ◽  
Jeffrey M. Shainline ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Light Emitting Diodes ◽  
Single Photon ◽  
Photon Detectors ◽  
Photonic Integrated Circuit ◽  
Light Emitting ◽  
Single Photon Detectors

scholarly journals Design and Implementation of a Sequential Digital Display for a Nigerian University

2018 ◽  
Vol 3 (2) ◽  
Author(s):  
Adetoye Aribisala ◽  
Oluwaseun Martins ◽  
Adegboyega Otenaike ◽  
John Ajayi
Keyword(s):  
Integrated Circuit ◽  
Light Emitting Diodes ◽  
Cost Effective ◽  
Electronic System ◽  
Digital Display ◽  
Light Emitting ◽  
The Public ◽  
Nigerian University ◽  
Effective Design ◽  
Study Center

A sequential digital display is an electronic system that is used to display information to the public. It is a device that contains light emitting diodes that conveys messages by a programmable controller or mechanical processes, regardless of size. Sequential digital display is fast gaining acceptance and application in different spheres of life. In this work, a sequential digital display system was designed and implemented. The components used include transformer, diodes, voltage regulator, resistors (fixed and variable types), capacitors, NE 555 timer, IC4017, IC7432, light emitting diodes and transistors. The aim of the project was to carry out a cost effective design, therefore, the components of the design were readily available and relatively cheap. The light emitting diodes displayed a message written as: Welcome to NOUN Ado-Ekiti study center. The project was tested and commissioned and found to meet specified design requirements.Keywords—Integrated Circuit, Light Emitting Diodes, Sequential Digital Display, Transistor

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

Injecting Inter-Layers and the Built-in Potential of Blue Polymer Light-Emitting Diodes

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Basic Structure ◽  
Thin Layers ◽  
Carrier Injection ◽  
Semiconducting Polymer ◽  
Light Emitting ◽  
Physical Mechanisms ◽  
Organic Solid ◽  
Polymer Light Emitting Diodes

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

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