scholarly journals Low Dielectric Materials for Microelectronics

10.5772/51499 ◽  
2012 ◽  
Author(s):  
He Seung ◽  
Albert. S. ◽  
Kyung-Youl Baek ◽  
Seung Sang
Keyword(s):  
Dielectric Materials ◽  
Low Dielectric

Modification of Low ĸ Materials for ULSI Multilevel Interconnects by Ion Implantation

2002 ◽  
Vol 716 ◽  
Author(s):  
Alok Nandini ◽  
U. Roy ◽  
A. Mallikarjunan ◽  
A. Kumar ◽  
J. Fortin ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Ion Implantation ◽  
Dielectric Materials ◽  
Dramatic Improvement ◽  
Force Microscopy ◽  
Low Dielectric ◽  
Quantitative Measurements ◽  
Hardness Increase ◽  
Xerogel Films ◽  
Ion Species

AbstractThin films of low dielectric constant (κ) materials such as Xerogel (ĸ=1.76) and SilkTM (ĸ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 x 1015 cm -2 and 1 x 1016 cm -2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low ĸ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5x hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.

Mesoporous Silica/Polymer Composites Utilizing Intelligent Caps onto Mesopore Walls toward Practical Low-Dielectric Materials

2009 ◽  
pp. NA-NA ◽  
Author(s):  
Shosuke Kiba ◽  
Yoshinori Okawauchi ◽  
Takeshi Yanagihara ◽  
Miwa Murakami ◽  
Tadashi Shimizu ◽  
...  
Keyword(s):  
Mesoporous Silica ◽  
Polymer Composites ◽  
Dielectric Materials ◽  
Low Dielectric

Intrinsic low dielectric behaviour of a highly thermally stable Sr-based metal–organic framework for interlayer dielectric materials

2014 ◽  
Vol 2 (19) ◽  
pp. 3762-3768 ◽  
Author(s):  
Muhammad Usman ◽  
Cheng-Hua Lee ◽  
Dung-Shing Hung ◽  
Shang-Fan Lee ◽  
Chih-Chieh Wang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Organic Framework ◽  
Dielectric Materials ◽  
Low Dielectric Constant ◽  
Water Molecules ◽  
Compound A ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Metal Organic ◽  
Organic Framework

A Sr-based metal–organic framework exhibits an intrinsic low dielectric constant after removing the water molecules. A low dielectric constant and high thermal stability make this compound a candidate for use as a low-k material.

Thermal conductivity study of porous low K dielectric materials

1999 ◽  
Vol 565 ◽  
Author(s):  
Chuan Hu ◽  
Michael Morgen ◽  
Paul S. Ho ◽  
Anurag Jain ◽  
William. N. Gill ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Materials ◽  
Porous Films ◽  
Low Dielectric ◽  
Omega Method ◽  
3 Omega ◽  
Low Dielectric Constant Materials ◽  
Low K ◽  
Method Analysis

AbstractA quantitative characterization of the thermal properties is required to assess the thermal performance of low dielectric constant materials. Recently we have developed a technique based on the 3-omega method for measuring the thermal conductivity of porous dielectric thin films. In this paper we present the results on the measurements of thermal conductivity of thin porous films using this method. A finite element method analysis is used to evaluate the approximations used in the measurement. Two porosity-weighted thermal resistor models are proposed to interpret the results. By studying the dependence of the thermal conductivity on porosity, we are able to discuss the scaling rule of thermal conductivity. Additionally, a steady state layered heater model is used for evaluating the significance of introducing porous ILDs into an interconnect structure.

Siloxane Polymers as Low Dielectric Materials for Microelectronics

1995 ◽  
Vol 390 ◽  
Author(s):  
C. P. Wong
Keyword(s):  
Dielectric Constant ◽  
Three Dimensional ◽  
Signal Propagation ◽  
Dielectric Materials ◽  
Propagation Delay ◽  
Dimensional Structure ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
High Dielectric

ABSTRACTA modem VLSI device is a complicated three-dimensional structure that consists of multilayer metallization conductor lines which are separated with interlayer-dielectrics as insulation. This VLSI technology drives the IC device into sub-micron feature size that operates at ultra-fast speed (in excess of > 100 MHz). Passivation and interlayer dielectric materials are critical to the device performance due to the conductor signal propagation delay of the high dielectric constant of the material. Low dielectric constant materials are the preferred choice of materials for this reasons. These materials, such as Teflon® and siloxanes (silicones), are desirable because of their low dielectric constant (∈1) = 2.0, 2.7, respectively. This paper describes the use of a low dielectric constant siloxane polymer (silicone) as IC devices passivation layer material, its chemistry, material processes and reliability testing.

Low-K Porous Spin-On-Glass

1999 ◽  
Vol 565 ◽  
Author(s):  
Paul A. Kohl ◽  
Agnes Padovani ◽  
Michael Wedlake ◽  
Dhananjay Bhusari ◽  
Sue Ann ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Elevated Temperatures ◽  
Porous Silica ◽  
Dielectric Materials ◽  
Decomposition Products ◽  
Air Gaps ◽  
Low Dielectric ◽  
Polymer Decomposition ◽  
Low K ◽  
By Products

AbstractPreviously, the fabrication of air-gap structures for electrical interconnections was demonstrated using a sacrificial polymer encapsulated in conventional dielectric materials. The air-gaps were formed by thermally decomposing the sacrificial polymer and allowing the by-products to diffuse through the encapsulating dielectric. The diffusivity of the polymer decomposition products is adequate at elevated temperatures to allow the formation of air-gaps. This process was extended to form low dielectric constant, porous silica from commercially available methylsilsesquioxane (MSQ) by the addition of the sacrificial polymer to the MSQ. The porous MSQ film was thermally cured followed by decomposition of the NB at temperatures above 400°C. The dielectric constant of the MSQ was lowered from 2.7 to 2.3 by creating 70 nm pores in the MSQ. The voids created in the MSQ appeared to exhibit a closed-pore structure.

scholarly journals Modified Low Rank Approximation for Detection of Weak Target by Noise space Exploitation in Through Wall Imaging

2019 ◽  
Vol 69 (5) ◽  
pp. 464-468
Author(s):  
Mandar K. Bivalkar ◽  
Bambam Kumar ◽  
Dharmendra Singh
Keyword(s):  
Dielectric Material ◽  
Random Noise ◽  
Dielectric Materials ◽  
Low Rank ◽  
Low Rank Approximation ◽  
Low Dielectric ◽  
Novel Approach ◽  
Rank Approximation ◽  
Weak Target ◽  
Wall Imaging

Low dielectric materials referred as weak targets are very difficult to detect behind the wall in through wall imaging (TWI) due to strong reflections from wall. TWI Experimental data collected for low dielectric target behind the wall and transceiver on another side of the wall. Recently several researchers are using low-rank approximation (LRA) for reduction of random noise in the various data. Explore the possibilities of using LRA for TWI data for improving the detection of low dielectric material. A novel approach using modification of LRA with exploiting the noise subspace in singular value decomposition (SVD) to detect weak target behind the wall is introduced. LRA consider data has low rank in f-x domain for noisy data, local windows are implemented in LRA approach to satisfy the principle assumptions required by the LRA algorithm itself. Decomposed TWI data in the noise space of the SVD to detect the weak target adaptively. Results for modified LRA for detection of weak target behind the wall are very encouraging over LRA.

The structure and chemistry of polymer metal interfaces: A combined EM and XPS investigation

1992 ◽  
Vol 50 (1) ◽  
pp. 196-197
Author(s):  
D. B. Leong ◽  
M. A. Helfand ◽  
R. L. McConville ◽  
F. W. Mercer
Keyword(s):  
Oxidative Stability ◽  
Moisture Absorption ◽  
Electronic Device ◽  
Analytical Techniques ◽  
Dielectric Materials ◽  
Device Performance ◽  
Metal Interactions ◽  
Low Dielectric ◽  
Polymer Metal ◽  
Application Requirements

Polymer to metal relationships for applications from coating finishes to electronic devices require interfacial synergy. Polymer application requirements range in temperature, thermal stability, thermal expansion, moisture absorption, oxidative stability, etc. and choice of metal and deposition technique must take into account these characteristics. While the ability to deposit metal in a controllable fashion is well established the present study focuses on what takes place at the polymer metal interface. Polymer/metal interactions on polyimide systems have been studied in detail for the past decade by a variety of analytical techniques. For the first time this is being investigated in the FPAE polymers combining EM study for structural analysis and XPS for chemical analysis. Fluorinated poly (arly ethers) FPAE, are a newly developed class of polymeric dielectric materials for electronic packaging. These new materials exhibit excellent oxidative stability, low moisture absorption and low dielectric constant. While these parameters are critical for electronic device performance and longevity, device performance is also highly dependent on metallization of the polymer.

Low Loss Photodielectric Materials for 5G HS/HF Applications

2019 ◽  
Vol 2019 (1) ◽  
pp. 000037-000041 ◽  
Author(s):  
Colin O. Hayes ◽  
Kevin Wang ◽  
Rosemary Bell ◽  
Colin Calabrese ◽  
Jeff Kong ◽  
...  
Keyword(s):  
High Frequency ◽  
Form Factors ◽  
Dielectric Materials ◽  
Monomethyl Ether ◽  
Next Generation ◽  
Low Dielectric ◽  
Fifth Generation ◽  
Gaas Devices ◽  
Generation Network ◽  
Ratio Imaging

Abstract Fifth generation network technology, often referred to as 5G, holds great potential for higher communication speeds, higher data transmission rates and improved connectivity, however, current dielectric materials lack sufficiently low dielectric loss (Df) at desired form factors for next-generation devices. While photoimageable dielectrics will certainly play a role in 5G manufacturing, many of the chemistries that have evolved and are suitable for photodielectrics (aqueous developed and polar solvent developed materials) have a Df that is too high for a 5G devices. Arylalkyl thermoset polymers (ATPs) have long been known for its low dielectric properties and found use in many high frequency applications, especially GaAs devices. An existing ATP photodielectric, CYCLOTENE™ 4000 Series Dielectric is characterized and compared to a newly designed experimental platform herein called 5G-XP-1. The platform developed utilizes new monomer and polymer chemistry to deliver a system capable of low temperature cure within 1 hour between 170–200°C, self-priming adhesion on silicon, copper, silicon nitride and polyimide and low Df at high frequency in a full formulation (<0.005 20–40GHz). 5G-XP-1 is deposited as a spin on photodielectric material but is still capable of achieving a variety of final film thicknesses from 15–25 μm. More importantly the formulation can achieve high aspect ratio imaging with 1:1 AR vias using an i-Line Karl Süss Mask Aligner. Moreover, this photodielectric material can be developed using environmentally-friendly solvents, such as esters like propylene glycol monomethyl ether acetate (PGMEA). The new experimental material 5G-XP-1 spin on photodielectric material demonstrates considerable promise for next-generation 5G devices, with future improvements on mechanical properties already in progress.

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