Nondestructive and Contactless Characterization Method for Spatial Mapping of the Thickness and Electrical Properties in Homo-Epitaxially Grown SiC Epilayers Using Infrared Reflectance Spectroscopy
2004 ◽
Vol 457-460
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pp. 905-908
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1997 ◽
Vol 222
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pp. 59-68
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1991 ◽
Vol 31
(4)
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pp. 1017-1023
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1997 ◽
Vol 45
(10)
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pp. 3944-3951
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1991 ◽
Vol 68
(1)
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pp. 34-38
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2011 ◽
Vol 127
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pp. 1280-1286
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1990 ◽
Vol 38
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pp. 682-688
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