scholarly journals Physical Vapour Deposition Techniques for Producing Advanced Organic Chemical Sensors

10.5772/32660 ◽  
2012 ◽  
Author(s):  
Michele Tonezzer ◽  
Gianluigi Maggioni
Keyword(s):  
Chemical Sensors ◽  
Vapour Deposition ◽  
Organic Chemical ◽  
Physical Vapour Deposition ◽  
Deposition Techniques

Microstructures of TiN films grown by various physical vapour deposition techniques

1991 ◽  
Vol 48 (1) ◽  
pp. 51-67 ◽  
Author(s):  
G. Håkansson ◽  
L. Hultman ◽  
J.-E. Sundgren ◽  
J.E. Greene ◽  
W.-D. Münz
Keyword(s):  
Vapour Deposition ◽  
Physical Vapour Deposition ◽  
Tin Films ◽  
Deposition Techniques

Physical vapour deposition techniques for the growth of YBa2Cu3O7thin films

1990 ◽  
Vol 3 (1) ◽  
pp. 38-52 ◽  
Author(s):  
R G Humphreys ◽  
J S Satchell ◽  
N G Chew ◽  
J A Edwards ◽  
S W Goodyear ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Physical Vapour Deposition ◽  
Deposition Techniques

scholarly journals Physical vapour deposition of cyanine salts and their first application in organic electronic devices

2019 ◽  
Vol 7 (2) ◽  
pp. 414-423
Author(s):  
Donatas Gesevičius ◽  
Antonia Neels ◽  
Léo Duchêne ◽  
Erwin Hack ◽  
Jakob Heier ◽  
...  
Keyword(s):  
Molecular Weight ◽  
High Molecular Weight ◽  
Vapour Deposition ◽  
Electronic Devices ◽  
Cyanine Dye ◽  
Organic Salt ◽  
Physical Vapour Deposition ◽  
Organic Electronic Devices ◽  
Organic Electronic ◽  
Deposition Techniques

A volatile high molecular weight organic salt semiconductor is presented, allowing the introduction of physical vapour deposition techniques in cyanine dye salt semiconductors.

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Semiconductors

2018 ◽  
Author(s):  
L. Solymar ◽  
D. Walsh ◽  
R. R. A. Syms
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Vapour Deposition ◽  
Energy Levels ◽  
Chemical Vapour ◽  
Optical Excitation ◽  
Organic Chemical ◽  
Metal Organic ◽  
Mathematical Relations ◽  
Semiconductor Properties

Both intrinsic and extrinsic semiconductors are discussed in terms of their band structure. The acceptor and donor energy levels are introduced. Scattering is discussed, from which the conductivity of semiconductors is derived. Some mathematical relations between electron and hole densities are derived. The mobilities of III–V and II–VI compounds and their dependence on impurity concentrations are discussed. Band structures of real and idealized semiconductors are contrasted. Measurements of semiconductor properties are reviewed. Various possibilities for optical excitation of electrons are discussed. The technology of crystal growth and purification are reviewed, in particular, molecular beam epitaxy and metal-organic chemical vapour deposition.

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