scholarly journals Asymptotic Expansion Homogenisation and Multiscale Topology Optimisation of Composite Structures

10.5772/21065 ◽  
2011 ◽  
Author(s):  
Joao A. ◽  
Joaquim Pinho-da-Cruz ◽  
Filipe Teixeira-Dias
Keyword(s):  
Asymptotic Expansion ◽  
Composite Structures ◽  
Topology Optimisation

Asymptotic Expansion Homogenization Method for Carbon Fiber Composite Structures Reinforced With Carbon Nanotubes

2009 ◽  
Author(s):  
Dimitris C. Lagoudas ◽  
George Chatzigeorgiou
Keyword(s):  
Carbon Nanotubes ◽  
Asymptotic Expansion ◽  
Composite Structures ◽  
Effective Properties ◽  
Fiber Composite ◽  
Homogenization Method ◽  
Research Community ◽  
Carbon Fiber Composite ◽  
Thermal And Electrical Properties ◽  
Walled Cnts

The carbon nanotubes (CNTs) with their high mechanical, thermal and electrical properties have attracted the attention of the research community. The wide variety of possible applications of composite structures containing single-walled or multi-walled CNTs has grown the need for correct characterization and understanding of the behavior of such composite structures. The identification of effective properties of CNT composites has been studied extensively the last decade by many researchers.

Asymptotic expansion homogenisation and topology optimisation of cellular materials

2016 ◽  
Vol 28 (1) ◽  
pp. 40-46
Author(s):  
J. Dias-de-Oliveira ◽  
J. Pinho-da-Cruz ◽  
F. Teixeira-Dias
Keyword(s):  
Asymptotic Expansion ◽  
Cellular Materials ◽  
Topology Optimisation ◽  
And Topology

In Situ microscopy of the anodic etching of silicon

1995 ◽  
Vol 53 ◽  
pp. 232-233
Author(s):  
Frances M. Ross ◽  
Peter C. Searson
Keyword(s):  
Composite Structures ◽  
High Surface ◽  
High Surface Area ◽  
Chemical Properties ◽  
Selective Etching ◽  
Silicon On Insulator ◽  
Second Phase ◽  
Porous Layers ◽  
New Class ◽  
Porous Semiconductors

Porous semiconductors represent a relatively new class of materials formed by the selective etching of a single or polycrystalline substrate. Although porous silicon has received considerable attention due to its novel optical properties1, porous layers can be formed in other semiconductors such as GaAs and GaP. These materials are characterised by very high surface area and by electrical, optical and chemical properties that may differ considerably from bulk. The properties depend on the pore morphology, which can be controlled by adjusting the processing conditions and the dopant concentration. A number of novel structures can be fabricated using selective etching. For example, self-supporting membranes can be made by growing pores through a wafer, films with modulated pore structure can be fabricated by varying the applied potential during growth, composite structures can be prepared by depositing a second phase into the pores and silicon-on-insulator structures can be formed by oxidising a buried porous layer. In all these applications the ability to grow nanostructures controllably is critical.

A Numerical and Experimental Approach for Modeling Porosity Due to Entrapped Air and Volatiles Off-gassing During Manufacturing of Composite Structures

2019 ◽  
Author(s):  
Curtis Hickmott ◽  
Alireza Forghani ◽  
Victoria Hutten ◽  
Evan Lorbiecki ◽  
Frank Palmieri ◽  
...  
Keyword(s):  
Composite Structures ◽  
Experimental Approach ◽  
Entrapped Air
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