scholarly journals Silicon-Based Third Generation Photovoltaics

Author(s):  
Tetyana Nychyporuk ◽  
Mustapha Lemiti
2007 ◽  
Vol 86 ◽  
pp. 012021 ◽  
Author(s):  
Masaharu Shiratani ◽  
William Makoto Nakamura ◽  
Hiroommi Miyahara, ◽  
Kazunori Koga

2020 ◽  
Vol 198 ◽  
pp. 01025
Author(s):  
Chen Yuanlong

Recently, the third generation semiconductor Gallium Nitride based electrical devices earn a more and more popular status in the industry for its easy popularization and cost effectivity. And another reason is the MOSFET with Gallium Nitride applied in power switching. However, transistors-related EE major (Electronic and Electrical engineering) courses are still focusing on the old silicon-based transistors, which own many deficiencies. In this paper, the current status of Gallium Nitride based MOSFET is investigated. Besides, a comparison in conducting capability, sensitivity and power efficiency between the MOSFET IRF510 and the Gallium Nitride based product GS-065-008-1-L is carried out. After the comparison, the application of MOSFET in EE courses is suggested and the priorities and difficulties are discussed as well.


2009 ◽  
Vol 3 (4) ◽  
pp. 394-405 ◽  
Author(s):  
G.F. Brown ◽  
J. Wu

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