scholarly journals The Thermodynamics of Defect Formation in Self-Assembled Systems

10.5772/20145 ◽  
2011 ◽  
Author(s):  
Colm T. ◽  
Richard A. ◽  
Tandra Goshal ◽  
Justin D. ◽  
Michael A.
Keyword(s):  
Defect Formation ◽  
Self Assembled

scholarly journals Nanoscale structural defects in oblique Ar+ sputtered Si(111) surfaces

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Divya Gupta ◽  
Mahak Chawla ◽  
Rahul Singhal ◽  
Sanjeev Aggarwal
Keyword(s):  
Oblique Incidence ◽  
Defect Formation ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Structural Defects ◽  
High Dose ◽  
Extended Defect ◽  
Structured Surfaces ◽  
Self Assembled ◽  
Argon Ion

Abstract The present endeavor investigates the controlled surface modifications and evolution of self-assembled nano-dimensional defects on oblique Ar+ sputtered Si(111) surfaces which are important substrates for surface reconstruction. The defect formation started at off-normal incidences of 50° and then deflates into defined defect zones with decrease in oblique incidence, depending strongly on angle of ion incidence. Interestingly, it is observed that mean size & height decreases while average density of these defects increases with decreasing oblique incidence. Non-linear response of roughness of irradiated Si(111) with respect to oblique incidence is observed. Crystalline (c-Si) to amorphous (a-Si) phase transition under oblique argon ion irradiation has been revealed by Raman spectroscopy. Our analysis, thus, shows that high dose argon ion irradiation generates of self-assembled nano-scale defects and surface vacancies & their possible clustering into extended defect zones. Explicitly, ion beam-stimulated mass transport inside the amorphous layers governs the observed defect evolution. This investigation of crystalline (c-Si) coupled with amorphous (a-Si) phases of nano-structured surfaces provides insight into the potential applications in the nano-electronic and optoelectronic devices thus, initiating a new era for fabricating multitude of novel structures.

Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 92-93
Author(s):  
H. Watanabe ◽  
B. Kabius ◽  
B. Roas ◽  
K. Urban
Keyword(s):  
Defect Formation ◽  
Ion Irradiation ◽  
High Resolution Electron Microscopy ◽  
Structural Disorder ◽  
Flux Lines ◽  
Pinning Effect ◽  
Magnetic Flux Lines ◽  
Resolution Electron ◽  
Radiation Induced ◽  
Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

Electrochemical behavior of self-assembled monolayers based on functionalized oligothiophenes

1998 ◽  
Vol 95 (6) ◽  
pp. 1339-1342 ◽  
Author(s):  
R. Michalitsch ◽  
A. El Kassmi ◽  
P. Lang ◽  
A. Yassar ◽  
F. Garnier
Keyword(s):  
Electrochemical Behavior ◽  
Self Assembled Monolayers ◽  
Assembled Monolayers ◽  
Self Assembled

Imaging of patterned self-assembled monolayers by scanning photoelectron microscopy

2003 ◽  
Vol 104 ◽  
pp. 459-462 ◽  
Author(s):  
R. Klauser ◽  
M. Zharnikov ◽  
I.-H. Hong ◽  
S.-C. Wang ◽  
A. Gölzhäuser ◽  
...  
Keyword(s):  
Self Assembled Monolayers ◽  
Assembled Monolayers ◽  
Scanning Photoelectron Microscopy ◽  
Self Assembled
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