A Novel Directive, Dispersion-Free UWB Radiator with Superb EM-Characteristics for Multiband/Multifunction Radar Applications

A 20.7% PAE 3-Stage 60GHz Power Amplifier for Radar Applications in 28nm Bulk CMOS

2019 14th European Microwave Integrated Circuits Conference (EuMIC) ◽

10.23919/eumic.2019.8909508 ◽

2019 ◽

Author(s):

Radu Ciocoveanu ◽

Robert Weigel ◽

Amelie Hagelauer ◽

Vadim Issakov

Keyword(s):

Power Amplifier ◽

Radar Applications

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Running Gaussian Average as Method of Adaptive Background Subtraction in Radar Applications

2020 21st International Radar Symposium (IRS) ◽

10.23919/irs48640.2020.9253804 ◽

2020 ◽

Author(s):

Michail Drozdov ◽

Borisas Levitas

Keyword(s):

Background Subtraction ◽

Radar Applications

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Free-Space Electromagnetic Characterization of Materials for Microwave and Radar Applications

PIERS Online ◽

10.2529/piers041213103403 ◽

2005 ◽

Vol 1 (2) ◽

pp. 128-132 ◽

Cited By ~ 5

Author(s):

Habiba Hafdallah Ouslimani ◽

Redha Abdeddaim ◽

Alain Priou

Keyword(s):

Free Space ◽

Radar Applications ◽

Characterization Of Materials

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Vivaldi Antenna for Ground Penetrating Radar Applications

SINDH UNIVERSITY RESEARCH JOURNAL -SCIENCE SERIES ◽

10.26692/surj/2018.01.0002 ◽

2018 ◽

Vol 50 (001) ◽

pp. 07-12 ◽

Cited By ~ 1

Author(s):

S. S. MEMON ◽

A. A. JAMALI ◽

M. R. ANJUM ◽

M. M. MEMON ◽

S. F. QADRI

Keyword(s):

Ground Penetrating Radar ◽

Radar Applications ◽

Vivaldi Antenna ◽

Ground Penetrating

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Infrared and Visible—Near Infrared Electroluminescence Developments for FA in AlGaN/GaN HEMTS on SiC

ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2010p0393 ◽

2010 ◽

Author(s):

M. Bouya ◽

D. Carisetti ◽

J.C. Clement ◽

N. Malbert ◽

N. Labat ◽

...

Keyword(s):

Failure Analysis ◽

Near Infrared ◽

High Electron Mobility Transistor ◽

Low Noise ◽

Civil Defense ◽

Base Stations ◽

Infrared Range ◽

High Electron ◽

Radar Applications ◽

Gan Hemts

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

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