scholarly journals Changes of Crystal Structure and Electrical Properties with Film Thickness and Zr/(Zr+Ti) Ratio for Epitaxial Pb(Zr,Ti)O3 Films Grown on (100)cSrRuO3//(100)SrTiO3 Substrates by Metalorganic Chemical Vapor Deposition

10.5772/17740 ◽  
2011 ◽  
Author(s):  
Mohamed-Tahar Chentir ◽  
Hitoshi Morioka ◽  
Yoshitaka Ehara ◽  
Keisuke Saito ◽  
Shintaro Yokoyama ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical

Crystal structure and microstructure of epitaxial Pb(Zr,Ti)O3 films consisting of mixed phases with tetragonal and rhombohedral symmetries grown on (100)cSrRuO3//(100)SrTiO3 substrate by metalorganic chemical vapor deposition

2007 ◽  
Vol 22 (6) ◽  
pp. 1551-1557 ◽  
Author(s):  
Shintaro Yokoyama ◽  
Hitoshi Morioka ◽  
Yong Kwan Kim ◽  
Hiroshi Nakaki ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Chemical Vapor Deposition ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Relative Volume Fraction ◽  
Bottom Region ◽  
Structure And Microstructure ◽  
Metalorganic Chemical

(100)-/(001)-oriented epitaxial Pb(Zr,Ti)O3(PZT) films with various Zr/(Zr + Ti) ratios and film thicknesses were grown on (100)cSrRuO3//(100)SrTiO3substrates at 600 °C by metalorganic chemical vapor deposition. Their crystal structure and microstructure consisting of particularly mixed phases with tetragonal and rhombohedral symmetries were investigated in detail. Films with the mixed phases with tetragonal and rhombohedral symmetries were ascertained at a Zr/(Zr + Ti) ratio of around 0.50 at a thickness of more than 200 nm from x-ray diffraction (XRD) analysis, while no mixed phase region was observed for 50 nm thick film. The relative volume fraction of the tetragonal cdomain decreased with increasing film thickness for 2-μm-thick films with mixed phases, while the tetragonal adomain and rhombohedral domain increased. These mixed phases were ascertained to have originated from the same cubic PZT grown above Curie temperature from results obtained by temperature-dependent high-resolution XRD reciprocal space mapping. The transmission electron microscopy images clearly revealed that the microstructure of the film gradually changed along the film thickness, despite the fact that the film was very uniform. Tetragonal phases were dominant in the bottom region (near the interface with the substrate) of the film, while rhombohedral phase was dominant in the upper region (near the surface), which was also ascertained by cross-sectional Raman analysis. In addition, the tetragonal a/cdomain was wider in the bottom region than that in the upper region of film with mixed phases. These data clearly demonstrate that both the crystal structure and microstructure changed along the film thickness.

Electrical properties of GaP on Si grown by metalorganic chemical vapor deposition

1993 ◽  
Vol 132 (3-4) ◽  
pp. 414-418 ◽  
Author(s):  
T. Soga ◽  
T. Suzuki ◽  
M. Mori ◽  
Z.K. Jiang ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical
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