scholarly journals GaN Nanowires Fabricated by Magnetron Sputtering Deposition

Author(s):  
Feng Shi
2014 ◽  
Vol 809-810 ◽  
pp. 193-200 ◽  
Author(s):  
Ru Guo Liang ◽  
Rui Liang ◽  
Gang Cao ◽  
Feng Shi

Mg-doped GaN nanowires have been successfully synthesized on Si (111) substrates by magnetron sputtering deposition through ammoniating Ga2O3/Au thin films at 900 °C for 15 min. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and photoluminescence (PL) spectrum were carried out to characterize microstructure, morphology, and optical property of GaN sample. The results demonstrate that the nanowires are single-crystal Mg-doped GaN with hexagonal wurtzite structure and high crystalline quality, which have the size of 40 nm in diameter and several tens of microns in length and good emission property. The growth procedure mainly follows the VLS mechanism, and Au plays an important role as catalyst, and more defect energy is formed due to metallic Au and thus promote the growth of GaN nanowires.


2021 ◽  
pp. 138792
Author(s):  
K. Bobzin ◽  
T. Brögelmann ◽  
N.C. Kruppe ◽  
M. Engels ◽  
C. Schulze

2011 ◽  
Vol 158 (5) ◽  
pp. K131 ◽  
Author(s):  
Jae Hyoung Park ◽  
Hoo Keun Park ◽  
Jinhoo Jeong ◽  
Woong Kim ◽  
Byoung Koun Min ◽  
...  

2018 ◽  
Vol 58 (SA) ◽  
pp. SAAD04 ◽  
Author(s):  
Hiroharu Kawasaki ◽  
Tamiko Ohshima ◽  
Yoshihito Yagyu ◽  
Takeshi Ihara ◽  
Masanori Shinohara ◽  
...  

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