scholarly journals High-frequency Millimeter Wave Absorber Composed of a New Series of Iron Oxide Nanomagnets

10.5772/16105 ◽  
2011 ◽  
Author(s):  
Asuka Namai ◽  
Shin-ichi Ohkoshi
Keyword(s):  
Iron Oxide ◽  
Millimeter Wave ◽  
High Frequency

scholarly journals A RF Redundant TSV Interconnection for High Resistance Si Interposer

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 169
Author(s):  
Mengcheng Wang ◽  
Shenglin Ma ◽  
Yufeng Jin ◽  
Wei Wang ◽  
Jing Chen ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
High Frequency ◽  
High Performance ◽  
Rapid Development ◽  
Coplanar Waveguide ◽  
Equivalent Circuit Model ◽  
High Resistivity ◽  
Performance Requirements ◽  
Wave Radar ◽  
Interconnect Design

Through Silicon Via (TSV) technology is capable meeting effective, compact, high density, high integration, and high-performance requirements. In high-frequency applications, with the rapid development of 5G and millimeter-wave radar, the TSV interposer will become a competitive choice for radio frequency system-in-package (RF SIP) substrates. This paper presents a redundant TSV interconnect design for high resistivity Si interposers for millimeter-wave applications. To verify its feasibility, a set of test structures capable of working at millimeter waves are designed, which are composed of three pieces of CPW (coplanar waveguide) lines connected by single TSV, dual redundant TSV, and quad redundant TSV interconnects. First, HFSS software is used for modeling and simulation, then, a modified equivalent circuit model is established to analysis the effect of the redundant TSVs on the high-frequency transmission performance to solidify the HFSS based simulation. At the same time, a failure simulation was carried out and results prove that redundant TSV can still work normally at 44 GHz frequency when failure occurs. Using the developed TSV process, the sample is then fabricated and tested. Using L-2L de-embedding method to extract S-parameters of the TSV interconnection. The insertion loss of dual and quad redundant TSVs are 0.19 dB and 0.46 dB at 40 GHz, respectively.

scholarly journals Force detection of high-frequency electron spin resonance near room temperature using high-power millimeter-wave source gyrotron

2021 ◽  
Vol 118 (2) ◽  
pp. 022407
Author(s):  
Hideyuki Takahashi ◽  
Yuya Ishikawa ◽  
Tsubasa Okamoto ◽  
Daiki Hachiya ◽  
Kazuki Dono ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Millimeter Wave ◽  
Electron Spin ◽  
High Power ◽  
High Frequency ◽  
Room Temperature ◽  
Force Detection ◽  
Wave Source ◽  
Spin Resonance ◽  
Millimeter Wave Source

Tunable High-frequency Millimeter-wave Signal Generator Based on Optical Carrier-suppressed Modulation

2018 ◽  
Vol 47 (12) ◽  
pp. 1206003
Author(s):  
刘婷婷 LIU Ting-ting ◽  
裴丽 PEI Li ◽  
王一群 WANG Yi-qun ◽  
吴良英 WU Liang-ying ◽  
郑晶晶 ZHENG Jing-jing ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
High Frequency ◽  
Signal Generator ◽  
Optical Carrier ◽  
Wave Signal

Millimeter-wave absorption properties of BaTiO3/Co3O4 composite powders controlled by high-frequency resonances of permittivity and permeability

2018 ◽  
Vol 6 (47) ◽  
pp. 12965-12975 ◽  
Author(s):  
Wei Tian ◽  
Ruoyang Ma ◽  
Jian Gu ◽  
Zongrong Wang ◽  
Ning Ma ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
High Frequency ◽  
Composite Powders ◽  
Absorption Properties ◽  
Wave Absorption ◽  
Wave Resonance ◽  
Permittivity And Permeability ◽  
5 Ghz

Millimeter-wave resonance of permittivity–permeability-contributed double absorption peaks in BaTiO3/Co3O4, exhibiting RL of ∼−40 dB and a bandwidth of 5 GHz around 35 GHz.

Development of High-Frequency GaN HFETs for Millimeter-Wave Applications

2008 ◽  
Vol E91-C (7) ◽  
pp. 984-988 ◽  
Author(s):  
M. HIGASHIWAKI ◽  
T. MIMURA ◽  
T. MATSUI
Keyword(s):  
Millimeter Wave ◽  
High Frequency

High-frequency limits of millimeter-wave transistors

1986 ◽  
Vol 7 (11) ◽  
pp. 640-642 ◽  
Author(s):  
M.B. Steer ◽  
R.J. Trew
Keyword(s):  
Millimeter Wave ◽  
High Frequency

scholarly journals Substrate integrated circuits for high frequency of opto electronics

2020 ◽  
Vol 9 (3) ◽  
pp. 224
Author(s):  
Mounika Punati ◽  
R. Yuvaraj
Keyword(s):  
Integrated Circuits ◽  
Millimeter Wave ◽  
High Frequency ◽  
Cutting Edge ◽  
Potential Outcomes ◽  
Work Patterns ◽  
Earth Models ◽  
Implementation Stages ◽  
Innovative Work

Another age of high-recurrence coordinated circuits is displayed, which is called substrate incorporated circuits (SICS). Current cutting edge of circuit plan and implementation stages dependent on this new idea are assessed and dis-cussed in delail. Various potential outcomes and various favorable circumstances of the SICS are appeared for microwave, millimeter-wave and opto hardware applications. Down to earth models are delineated with hypothetical and trial results for substrate coordinated waveguide (SIW), substrate incorporated chunk waveguide (SISW) and substrate incorporated non-transmitting dielectric (SI") direct circuits. Future innovative work patterns are likewise dis-cussed regarding ease imaginative plan of millimeter-wave and optoelectronic coordinated circuits.

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