scholarly journals Description of Topography of Surfaces and Thin Films with the use Fourier Transformation, Obtained from Non-Standard Optical Measurements

10.5772/16037 ◽  
2011 ◽  
Author(s):  
Janusz Jaglarz
Keyword(s):  
Thin Films ◽  
Fourier Transformation ◽  
Optical Measurements

Sol-gel synthesis of textured lanthanum titanate thin films

2003 ◽  
Vol 18 (2) ◽  
pp. 357-362 ◽  
Author(s):  
Mary M. Sandstrom ◽  
Paul Fuierer
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Precursor Solution ◽  
Solution Concentration ◽  
Optical Measurements ◽  
Layered Perovskite ◽  
Orientation Factor ◽  
Anisotropic Structures ◽  
Sol Gel Films ◽  
Sol Gel Synthesis

Control over crystallographic orientation in thin films is important, particularly with highly anisotropic structures. Because of its ferroelectric nature, the layered perovskite La2Ti2O7 has interesting piezoelectric and electrooptic properties that may be exploited when films are highly textured. Sol-gel films with an orientation factor of greater than 95% were fabricated without relying on epitaxial (lattice-matching) growth from the substrate. Film orientation and crystallization were confirmed by x-ray diffraction, scanning electron microscopy, atomic force microscopy, and optical measurements. The particle sizes in all precursor solutions were measured by dynamic light scattering experiments. Experimental results indicate that film orientation is a function of precursor solution concentration, size of the molecular clusters in the solution, and film thickness.

Optical Properties of (Pb,Eu)Te Thin Films and Superlattices

1986 ◽  
Vol 89 ◽  
Author(s):  
W. C. Goltsos ◽  
A. V. Nurmikko ◽  
D. L. Partin
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spin Exchange ◽  
Optical Measurements ◽  
Optical Gap ◽  
Exchange Processes ◽  
Reflectance Measurements

AbstractPhotoluminescence, transmission, and reflectance measurements have yielded information about the states defining an optical gap in thin films and superlattices based on the (Pb,Eu)Te system, including the limit of high Eu concentration. Magneto-optical measurements show the presence of finite spin exchange processes at low Eu-concentrations.

Boron-doped cobalt oxide thin films and its electrochemical properties

2016 ◽  
Vol 30 (27) ◽  
pp. 1650343 ◽  
Author(s):  
S. Kerli
Keyword(s):  
Thin Films ◽  
Cobalt Oxide ◽  
Performance Test ◽  
Spray Deposition ◽  
Boron Doping ◽  
Optical Measurements ◽  
Oxide Thin Films ◽  
Boron Doped ◽  
Electrochemical Supercapacitor ◽  
Supercapacitor Performance

The cobalt oxide and boron-doped cobalt oxide thin films were produced by spray deposition method. All films were obtained onto glass and fluorine-doped tin oxide (FTO) substrates at 400[Formula: see text]C and annealed at 550[Formula: see text]C. We present detailed analysis of the morphological and optical properties of films. XRD results show that boron doping disrupts the structure of the films. Morphologies of the films were investigated by using a scanning electron microscopy (SEM). Optical measurements indicate that the band gap energies of the films change with boron concentrations. The electrochemical supercapacitor performance test has been studied in aqueous 6 M KOH electrolyte and with scan rate of 5 mV/s. Measurements show that the largest capacitance is obtained for 3% boron-doped cobalt oxide film.

scholarly journals The physical and optical properties of AZO thin films on teflon substrate at low deposition temperature by spray pyrolysis

2020 ◽  
Vol 18 (3) ◽  
pp. 1222
Author(s):  
Sofea Nabila Hazmin ◽  
F. S. S. Zahid ◽  
N. S. M. Sauki ◽  
M. H. Mamat ◽  
M. N. Amalina
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Deposition Temperature ◽  
Spray Pyrolysis Technique ◽  
Optical Measurements ◽  
Physical Analysis ◽  
X Ray Diffraction ◽  
Visible Reflectance ◽  
Low Deposition Temperature

<span>This paper presents the physical and optical properties of AZO thin films on Teflon substrate at low deposition temperature by spray pyrolysis. In this study, the effect of different process parameters such as spray time and substrate to nozzle distance on the physical and optical characteristic of aluminium doped zinc oxide (AZO) deposited on Teflon substrates was investigated. The AZO thin films were successfully deposited onto Teflon substrate by spray pyrolysis technique at low deposition temperature. The physical analysis by X-ray diffraction (XRD) shows that the deposited Teflon substrate films have a preferred orientation along the direction (100) and (101). Optical measurements were conducted using Jasco/V-670 Ex Uv-Vis-NIR Spectrophotometer model to confirms that in visible ray it is possible to get good reflectance of AZO films with a reflection of 80%. The values of band gaps Eg were calculated from the spectra of UV-Visible reflectance that were vary between 3.06 and 3.14 eV. </span>

scholarly journals Effect of Pb percentage on optical parameters of PbxCd1-xSe thin films

2019 ◽  
Vol 14 (29) ◽  
pp. 1-7
Author(s):  
Farah Q. Kamil
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Energy Gap ◽  
Optical Measurements ◽  
Optical Parameters ◽  
Optical Energy Gap ◽  
Optical Energy ◽  
Glass Substrates

PbxCd1-xSe compound with different Pb percentage (i.e. X=0,0.025, 0.050, 0.075, and 0.1) were prepared successfully. Thin filmswere deposited by thermal evaporation on glass substrates at filmthickness (126) nm. The optical measurements indicated thatPbxCd1-xSe films have direct optical energy gap. The value of theenergy gap decreases with the increase of Pb content from 1.78 eV to1.49 eV.

Characterization of Transparent Conducting Pulsed Laser Deposited Films in the Indium Zinc Oxide System

1998 ◽  
Vol 547 ◽  
Author(s):  
A. Rougier ◽  
N. Naghavi ◽  
C. Marcel ◽  
F. Portemer ◽  
L. Dupont ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Visible Region ◽  
Pulsed Laser ◽  
Oxide System ◽  
Optical Measurements ◽  
K Value ◽  
Indium Zinc Oxide ◽  
Average Transmittance

AbstractThin films of indium zinc oxide so called IZO were prepared with pulsed laser deposition. It was found that the crystalline structure, the composition and the morphology of the films as well as the optical and electrical properties were quite sensitive to the deposition conditions namely to the temperature and oxygen pressure. The crystallinity of the ZnkIn2O3+k (k from 1 to 5) thin films increases as the substrate temperature increases. An average transmittance of 85 % in the visible region was obtained for any k values. Optical measurements show a continuous decrease of the band gap as the zinc amount increases. The highest conductivity reported is for the ZnIn2O4, thin films deposited at 300 °C (σ = 1.2 103 S/cm). Increasing the amount of Zn (i.e. k value) was found to result in a conductivity decrease. Finally, a good correlation between the electric mobility and the optical mobility is obtained.

Effect of the Substrate Temperature on the Properties of SnO2 Thin Films Prepared by Ultrasonic Spray for Solar Cells Applications

2019 ◽  
Vol 59 ◽  
pp. 126-136
Author(s):  
Radia Kalai ◽  
Amara Otmani ◽  
Lakhdar Bechiri ◽  
Noureddine Benslim ◽  
Abdelaziz Amara ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Substrate Temperature ◽  
Optical Measurements ◽  
Force Microscopy ◽  
Ultrasonic Spray ◽  
Transmission Electron ◽  
Vis Spectroscopy ◽  
High Absorption Coefficient ◽  
Surface Morphologies

Structural, optical and electrical properties of SnO2 thin films deposited by spray ultrasonic technique were investigated by varying substrate temperature. The structural characterization of the films was analyzed via X-ray diffraction (XRD) technique and transmission electron microscopy (TEM). Films surface morphologies were studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Optical absorption spectrum was recorded using the UV–Vis spectroscopy and the films were found to be transparent. Optical measurements showed that the layers had a relatively high absorption coefficient of 105 cm−1. A shift in the absorption edge was observed and the films exhibited direct transitions with band gap energies ranging from 3.85 to 3.94 eV.

scholarly journals Effect of Additives on Optical Measurements of NiSe2 Thin Films

2013 ◽  
Vol 53 ◽  
pp. 555-561 ◽  
Author(s):  
T. Joseph Sahaya Anand ◽  
Mohd. Zaidan ◽  
S. Shariza
Keyword(s):  
Thin Films ◽  
Optical Measurements ◽  
Effect Of Additives

Influence of Post Growth Annealing on the Optical Properties of Gallium Nitride Films Grown by Pulsed Laser Deposition

2012 ◽  
Vol 1432 ◽  
Author(s):  
M. Baseer Haider ◽  
M. F. Al-Kuhaili ◽  
S. M. A. Durrani ◽  
Imran Bakhtiari
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Nitrogen Atmosphere ◽  
Laser Deposition ◽  
Optical Measurements ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

Abstract:Gallium nitride thin films were grown by pulsed laser deposition. Subsequently, post-growth annealing of the samples was performed at 400, and 600 oC in the nitrogen atmosphere. Surface morphology of the as-grown and annealed samples was performed by atomic force microscopy, surface roughness of the films improved after annealing. Chemical analysis of the samples was performed using x-ray photon spectroscopy, stoichiometric Gallium nitride thin films were obtained for the samples annealed at 600 oC. Optical measurements of the samples were performed to investigate the effect of annealing on the band gap and optical constants the films.

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