scholarly journals Three Transducers Embedded into One Single SiC Photodetector: LSP Direct Image Sensor, Optical Amplifier and Demux Device

10.5772/14098 ◽  
2011 ◽  
Author(s):  
M. Vieira ◽  
P. Louro ◽  
M. Fernandes ◽  
M. A. ◽  
A. Fantoni ◽  
...  
Keyword(s):  
Optical Amplifier ◽  
Image Sensor ◽  
Direct Image

Three Transducers Embedded into a Single SiC Photodetector: LSP Direct Image Sensor, Optical Amplifier and Demux

2012 ◽  
Vol 18-19 ◽  
pp. 265-270
Author(s):  
M. Vieira ◽  
P. Louro ◽  
M.A. Vieira ◽  
J. Costa ◽  
M. Fernandes
Keyword(s):  
Low Power ◽  
Light Source ◽  
Optical Amplifier ◽  
Color Pattern ◽  
Image Sensor ◽  
Direct Image ◽  
Sensor Output ◽  
Color Sensor ◽  
Output Characteristics ◽  
Color Channels

A double pi’n/pin a-SiC:H heterostructure with two optical connections for light triggering in different spectral regions is presented and its behavior as image and color sensor, optical amplifier and demux device is discussed. The design and the light source properties are correlated with the sensor output characteristics. Different readout techniques are used. When a low power monochromatic scanner readout is used the transducer recognizes a color pattern projected on it acting as a color and image sensor. Scan speeds up to 104lines per second are achieved without degradation in the resolution. If the photocurrent generated by different monochromatic pulsed channels is readout directly, the information is demultiplexed. Results show that it is possible to decode the information from three simultaneous color channels at bit rates per channel higher than 4000 bps. Finally, when triggered by an appropriated wavelength, it can amplify or suppress the generated photocurrent working as an optical amplifier. Electrical models are present to support the sensing methodologies.

Reviewing Photo-sensing Devices Using a-SiC Based Materials

2010 ◽  
Vol 1245 ◽  
Author(s):  
Manuela Vieira ◽  
Miguel Fernandes ◽  
Paula Louro ◽  
Alessandro Fantoni ◽  
M. A. Vieira ◽  
...  
Keyword(s):  
Optical Filter ◽  
Optical Amplifier ◽  
Color Pattern ◽  
Image Sensor ◽  
Sensor Output ◽  
Electrical Model ◽  
Color Intensity ◽  
Sensing Element ◽  
Color Sensor ◽  
Output Characteristics

AbstractIn this paper a double pi'n/pin a-SiC:H voltage and optical bias controlled device is presented and it behavior as image and color sensor, optical amplifier and multiplex/demultiplex device discussed. The sensing element structure (single or tandem) and the light source properties (wavelength, intensity and frequency) are correlated with the sensor output characteristics (light-to-dark sensivity, resolution, linearity, bit rate and S/N ratio). Depending on the application, different readout techniques are used. When a low power monochromatic scanner readout the generated carriers the transducer recognize a color pattern projected on it acting as a color and image sensor. Scan speeds up to 104 lines per second are achieved without degradation in the resolution. If the photocurrent generated by different monochromatic pulsed channels is readout directly, the information is multiplexed or demultiplexed. It is possible to decode the information from three simultaneous color channels without bit errors at bit rates per channel higher than 4000bps. Finally, when triggered by appropriated light, it can amplify or suppress the generated photocurrent working as an optical amplifier. An electrical model is presented to support the sensing methodologies. Experimental and simulated results show that the tandem devices act as charge transfer systems. They filter, store, amplify and transport the photogenerated carriers, keeping its memory (color, intensity and frequency) without adding any optical pre-amplifier or optical filter as in the standard p-i-n cells.

Development of Wafer Level Chip Size Packaging Process and its Application to the CMOS Image Sensor Module for Medical Device

2017 ◽  
Vol 137 (2) ◽  
pp. 48-58
Author(s):  
Noriyuki Fujimori ◽  
Takatoshi Igarashi ◽  
Takahiro Shimohata ◽  
Takuro Suyama ◽  
Kazuhiro Yoshida ◽  
...  
Keyword(s):  
Medical Device ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Wafer Level ◽  
Packaging Process ◽  
Sensor Module ◽  
Chip Size

Current and Future 3D-LSI Technology for the Image Sensor Devices

2008 ◽  
Author(s):  
Makoto Motoyoshi ◽  
Hirofumi Nakamura ◽  
Manabu Bonkohara ◽  
Mitsumasa Koyanagi
Keyword(s):  
Image Sensor ◽  
Sensor Devices

An Over 120dB Dynamic Range Linear Response Single Exposure CMOS Image Sensor with Two-stage Lateral Overflow Integration Trench Capacitors

2020 ◽  
Vol 2020 (7) ◽  
pp. 143-1-143-6 ◽  
Author(s):  
Yasuyuki Fujihara ◽  
Maasa Murata ◽  
Shota Nakayama ◽  
Rihito Kuroda ◽  
Shigetoshi Sugawa
Keyword(s):  
Linear Response ◽  
Dynamic Range ◽  
Signal To Noise Ratio ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Signal To Noise ◽  
Single Exposure ◽  
Two Stage ◽  
Noise Ratio ◽  
Maximum Signal

This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors (LOFITreCs) exhibiting over 120dB dynamic range with 11.4Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70dB. The measured SNR at all switching points were over 35dB thanks to the proposed two-stage LOFITreCs.

A practical approach on non-regular sampling and universal demosaicing of raw image sensor data

2020 ◽  
Vol 2020 (1) ◽  
pp. 91-95
Author(s):  
Philipp Backes ◽  
Jan Fröhlich
Keyword(s):  
Image Quality ◽  
Source Code ◽  
Image Sensor ◽  
Sensor Data ◽  
Color Filter ◽  
Lowpass Filter ◽  
Sampling Errors ◽  
Regular Sampling ◽  
Single Sensor ◽  
Similar Image Quality

Non-regular sampling is a well-known method to avoid aliasing in digital images. However, the vast majority of single sensor cameras use regular organized color filter arrays (CFAs), that require an optical-lowpass filter (OLPF) and sophisticated demosaicing algorithms to suppress sampling errors. In this paper a variety of non-regular sampling patterns are evaluated, and a new universal demosaicing algorithm based on the frequency selective reconstruction is presented. By simulating such sensors it is shown that images acquired with non-regular CFAs and no OLPF can lead to a similar image quality compared to their filtered and regular sampled counterparts. The MATLAB source code and results are available at: http://github. com/PhilippBackes/dFSR

Development of a Pixel of Area Image Sensor in X-ray Detector

2018 ◽  
Vol 23 (6) ◽  
pp. 573-585
Author(s):  
D.A. Suponnikov ◽  
◽  
A.N. Putilin ◽  
E.A. Tatarinova ◽  
Z.G. Zhgunev ◽  
...  
Keyword(s):  
Image Sensor ◽  
X Ray

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

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