scholarly journals Mechanical and Electronic Properties of Graphene Nanostructures

10.5772/13826 ◽  
2011 ◽  
Author(s):  
Ricardo Faccio ◽  
Luciana Fernndez-Werner ◽  
Helena Pardo ◽  
Cecilia Goyenola ◽  
Pablo A. ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Graphene Nanostructures

scholarly journals Electronic properties of graphene nanostructures

2011 ◽  
Vol 23 (24) ◽  
pp. 243201 ◽  
Author(s):  
F Molitor ◽  
J Güttinger ◽  
C Stampfer ◽  
S Dröscher ◽  
A Jacobsen ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Graphene Nanostructures

Structural, energetic, and electronic properties of gyroidal graphene nanostructures

Carbon ◽  
2016 ◽  
Vol 96 ◽  
pp. 998-1007 ◽  
Author(s):  
J.R. Owens ◽  
C. Daniels ◽  
A. Nicolaï ◽  
H. Terrones ◽  
V. Meunier
Keyword(s):  
Electronic Properties ◽  
Graphene Nanostructures

scholarly journals Understanding the non-covalent interaction mediated modulations on the electronic structure of quasi-zero-dimensional graphene nanoflakes

2018 ◽  
Vol 20 (27) ◽  
pp. 18718-18728
Author(s):  
Amrit Sarmah ◽  
Pavel Hobza
Keyword(s):  
Electronic Structure ◽  
Electronic Properties ◽  
Alternative Pathway ◽  
Covalent Interaction ◽  
Graphene Nanoflakes ◽  
Non Destructive ◽  
Graphene Nanostructures

Non-covalent interaction mediated controlled perturbations to the electronic properties of nanostructures as an alternative pathway for the non-destructive functionalization of graphene nanostructures.

Generalized Hamiltonian for a graphene subjected to arbitrary in-plane strains

2015 ◽  
Vol 08 (01) ◽  
pp. 1530001 ◽  
Author(s):  
Biao Wang ◽  
Yunhua Wang ◽  
Yulan Liu
Keyword(s):  
Electronic Structure ◽  
Electronic Properties ◽  
Elastic Deformation ◽  
Recent Progress ◽  
Electromechanical Systems ◽  
Linear Elastic ◽  
Electronic Response ◽  
Graphene Nanostructures

The interplay between the linear elastic deformation up to 20% and the unique electronic properties of graphene nanostructures offers an attractive prospect to manipulate their properties by strain. Here we review the recent progress on the electronic response of graphene to the in-plane strains, including the strain-modulated electronic structure and the strain-modulated spin, valley and superconducting transports. A generalized Hamiltonian for a graphene was constructed subjected to arbitrary in-plane strains. The Hamiltonian is helpful to design and optimize the graphene-based nano-electromechanical systems (NEMS).

Role of edge geometry and chemistry in the electronic properties of graphene nanostructures

2014 ◽  
Vol 173 ◽  
pp. 173-199 ◽  
Author(s):  
Shintaro Fujii ◽  
Maxim Ziatdinov ◽  
Misako Ohtsuka ◽  
Koichi Kusakabe ◽  
Manabu Kiguchi ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Atomic Scale ◽  
Strong Impact ◽  
Geometrical Shape ◽  
Vacancy Defects ◽  
Theoretical Simulation ◽  
Edge Geometry ◽  
Modified Graphene ◽  
Graphene Nanostructures

The geometry and chemistry of graphene nanostructures significantly affects their electronic properties. Despite a large number of experimental and theoretical studies dealing with the geometrical shape-dependent electronic properties of graphene nanostructures, experimental characterisation of their chemistry is clearly lacking. This is mostly due to the difficulties in preparing chemically-modified graphene nanostructures in a controlled manner and in identifying the exact chemistry of the graphene nanostructure on the atomic scale. Herein, we present scanning probe microscopic and first-principles characterisation of graphene nanostructures with different edge geometries and chemistry. Using the results of atomic scale electronic characterisation and theoretical simulation, we discuss the role of the edge geometry and chemistry on the electronic properties of graphene nanostructures with hydrogenated and oxidised linear edges at graphene boundaries and the internal edges of graphene vacancy defects. Atomic-scale details of the chemical composition have a strong impact on the electronic properties of graphene nanostructures,i.e., the presence or absence of non-bonding π states and the degree of resonance stability.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

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