scholarly journals Influence of Quantum well Thickness Fluctuation on Optical Properties of InGaN/GaN Multi Quantum well Structure Grown by PA-MBE

2017 ◽  
Vol 26 (3) ◽  
pp. 52-54 ◽  
Author(s):  
Hyeonseok Woo ◽  
Jongmin Kim ◽  
Sangeun Cho ◽  
Yongcheol Jo ◽  
Cheong Hyun Roh ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Quantum Well Structure ◽  
Multi Quantum Well

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Green Emission ◽  
Luminescence Spectroscopy ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

Optical properties of potentially modulated multi-quantum well solar cell structures

2004 ◽  
Vol 264 (1-3) ◽  
pp. 86-91 ◽  
Author(s):  
Naoyuki Shiotsuka ◽  
Toru Takeda ◽  
Yoshitaka Okada
Keyword(s):  
Optical Properties ◽  
Solar Cell ◽  
Quantum Well ◽  
Cell Structures ◽  
Multi Quantum Well

Current bistability in a weakly coupled multi-quantum well structure: a magnetic field induced ‘memory effect’

2009 ◽  
Vol 42 (14) ◽  
pp. 145109 ◽  
Author(s):  
W H M Feu ◽  
J M Villas-Bôas ◽  
L A Cury ◽  
P S S Guimarães ◽  
G S Vieira ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Memory Effect ◽  
Quantum Well Structure ◽  
Weakly Coupled ◽  
Multi Quantum Well

Optical gain and carrier lifetime of InGaN multi‐quantum well structure laser diodes

1996 ◽  
Vol 69 (11) ◽  
pp. 1568-1570 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin‐ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Lifetime ◽  
Laser Diodes ◽  
Optical Gain ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 36 (Part 2, No. 8B) ◽  
pp. L1059-L1061 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Structure ◽  
Long Lifetime ◽  
Multi Quantum Well ◽  
Structure Laser
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