scholarly journals Dielectric and Electrical Properties of Copper-Polyimide-Copper Structures

2021 ◽  
Author(s):  
Julia FEDOTOVA

Experimental study of current-voltage (I-V) characteristics and frequency dependences of impedance in copper-Kapton-copper structures in the temperature range 240 – 300 K were carried out. Concentration and mobility of charge carriers thermally excited from traps with exponential distribution by energy in Kapton bulk and metal-Kapton interface and injected from copper electrodes into Kapton were estimated from the fitting of experimental I-V curves within the frame of the model of the space charge limited current (SCLC). Concentration and the width of energy of localized states, arising from the disorder of the Kapton structure, are additionally estimated from the I-V characteristics.

2011 ◽  
Vol 20 (04) ◽  
pp. 749-773 ◽  
Author(s):  
JAIRO C. NOLASCO ◽  
ALEJANDRA CASTRO-CARRANZA ◽  
BENJAMÍN IÑIGUEZ ◽  
JOSEP PALLARÈS ◽  
MAGALI ESTRADA

Au / P 3 HT (poly [3-hexylthiophene])/n-type crystalline silicon ( n - c - Si ) solar cells have been fabricated. The Aluminum back contact is obtained by evaporation on silicon substrate. An 80 nm P 3 HT layer thick was spin-coated on silicon substrate followed by thermal annealing. Finally golden contacts are deposited by sputtering. The best characteristics of this flawed solar cell are: V oc =0.47 V , I sc =7.42 mA / cm 2 and an efficiency of 1.29%. The area of this device is 0.07 cm2. In order to get a deep understanding of the electrical properties of the heterojunction, capacitance-voltage and current-voltage-temperature measurements have been made. A compact electrical equivalent circuit has been used to describe the dark current-voltage characteristics. It is based on the combination of two exponential mechanisms, shunt and series resistances and space-charge limited current terms. From the temperature dependence of the extracted parameters we can obtain the limiting conduction mechanism. We found that the polymeric layer limits the current not only at low voltages, through Multi-Tunneling Capture Emission, but also at high voltages, through series resistance and Space-Charge Limited Current. On the other hand, the Silicon wafer limits the current at medium voltages, through the diffusion mechanism. In addition, the model is useful to estimate the open circuit voltage and built in voltage of the solar cell using only dark current voltage measurements.


1988 ◽  
Vol 6 (3) ◽  
pp. 579-586 ◽  
Author(s):  
Cord Passow

In order to calculate more generally the space-charge limited current between two points of different voltage, modern differential geometrical methods are applied. This problem was first treated by Child (1911) and later by Langmuir (1913). It is possible, for example, to account for effects due to more than one charge component as well as the influence of a neutral background gas (which causes ionization and scattering of charge carriers). A systematic derivation of the self-consistent representation based on a Hamilton theory for density functions is given, and solution methods are discussed. The concept is designed to investigate ion and electron diodes with very intense currents, but it may also be useful for treating space charge problems in a stationary plasma.


2021 ◽  
pp. 81-87
Author(s):  
Andrey Tyutyunik ◽  
Vladimir Gurchenko ◽  
Alim Mazinov

In this work, we analyzed the current-voltage characteristics in the temperature range of the hybrid organic material C24H24N6O3Zn in order to determine the prospects for using this compound as a semiconductor material. The range of temperature measurements was from 270 to 330 K. An electrochemical analysis of the studied coordination compound was carried out, the energies of the HOMO and LUMO levels were calculated. The method of obtaining, microscopy, and also the method of measuring the temperature dependences of the electrical properties of the obtained thin films of these hybrid materials based on zinc complexes are described. A number of fundamental values of the films of this coordination compound have been calculated: the activation energy is  0.88 eV and the mobility of charge carriers is  1.4710-11 cm V-1 s-1.


Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 228
Author(s):  
Renat B. Salikhov ◽  
Akhat G. Mustafin ◽  
Ilnur N. Mullagaliev ◽  
Timur R. Salikhov ◽  
Anastasiia N. Andriianova ◽  
...  

The optoelectronic properties of a new poly(2-ethyl-3-methylindole) (MPIn) are discussed in this paper. The absorption and photoluminescence spectra were studied. The electronic spectrum of MPIn showed a single absorption maximum at 269 nm that is characteristic of the entire series of polyindoles. The fluorescence spectra show that the emission peaks of the test sample are centered around 520 nm. The photoconductivity of thin film samples of MPIn polyindole was studied by measuring the current-voltage characteristics under ultraviolet radiation with a wavelength of 350 nm. Samples of phototransistors were obtained, where thin films of MPIn polyindole were used as a transport layer, and their characteristics were measured and analyzed. The value of the quantum efficiency and the values of the mobility of charge carriers in thin polyindole films were estimated.


2010 ◽  
Vol 2010 ◽  
pp. 1-5 ◽  
Author(s):  
N. Bano ◽  
I. Hussain ◽  
O. Nur ◽  
M. Willander ◽  
P. Klason

High-quality ZnO rods were grown by the vapour-liquid-solid (VLS) technique on 4H-p-SiC substrate. The current transport mechanisms of the diodes at room temperature (RT) have been explained in term of the space-charge-limited current model based on the energy band diagram of ZnO rods/4H-p-SiC heterostructure. The tunneling mechanism via deep-level states was found to be the main conduction process at low-applied voltage but at trap-filled limit voltage all traps are filled and the space-charge-limited current conduction dominated the current transport. From the RT current voltage measurements, the energy of the deep level trap and the trap concentration were obtained as  eV and , respectively. The deep level states observed correspond to zinc interstitial ( ), responsible for the violet emission.


Polymer ◽  
1982 ◽  
Vol 23 (11) ◽  
pp. 1622-1626 ◽  
Author(s):  
J.P. Jog ◽  
S.J. Walzade ◽  
S.V. Bhoraskar

1989 ◽  
Vol 149 ◽  
Author(s):  
J. C. Van Den Heuvel ◽  
R. C. Van Oort ◽  
B. Bokhorst ◽  
M. J. Geerts

ABSTRACTSpace Charge Limited Current (SCLC) measurements are used to obtain the density of gap states of intrinsic a-Si:H. If an electron is trapped by a positively charged defect, then the electron can be released by a high electric field which disturbs the SCLC measurement. A correction for this effect, which is called Poole-Frenkel emission, in SCLC measurements is derived and used to analyze current-voltage measurements performed on n-i-n a-Si:H devices. It is shown that the Poole-Frenkel emission is absent, and that this is in accordance with the contemporary models for the gap states in a-Si:H.We also studied the characteristic temperature which is based on the concept that the distribution of gap states is exponential, and concluded that this distribution is not exponential.


Cerâmica ◽  
2020 ◽  
Vol 66 (379) ◽  
pp. 291-296
Author(s):  
S. I. Gudkov ◽  
A. V. Solnyshkin ◽  
D. A. Kiselev ◽  
A. N. Belov

Abstract The electrical conductivity of lithium tantalate thin film on the silicon substrate was studied. The film structure was prepared by RF magnetron sputtering. In general, the current-voltage characteristics were asymmetric and similar to that of a diode. The current-voltage characteristics had several sections associated with various transport mechanisms of current carriers. The main conductivity mechanism was related to the space-charge-limited current. The current-voltage characteristics showed that there was a mismatch between the forward and backward runs. One of the reasons for such behavior is a space charge accumulation due to charge carriers which were injected from the electrode and did not relax.


2020 ◽  
Vol 21 (4) ◽  
pp. 640-644
Author(s):  
R.O. Dzumedzey ◽  
Ya.P. Saliy ◽  
I.V. Horichok

The electrical properties of thin polycrystalline films of solid solutions Pb18Ag2Te20, Pb16Sn2Ag2Te20, and Pb14Sn4Ag2Te20 (LATT) on mica-muscovite substrates have been investigated. The temperature dependencies of concentration and mobility of charge carriers for these condensates are researched. Predominant scattering mechanisms are established. These are scattering on ionized impurities and acoustic phonons at low and high temperatures respectively.


Sign in / Sign up

Export Citation Format

Share Document