scholarly journals High resolution time-of-flight analyzer for charge exchange process.

1983 ◽  
Vol 31 (3) ◽  
pp. 165-172 ◽  
Author(s):  
Naoki Nose
Keyword(s):  
High Resolution ◽  
Charge Exchange ◽  
Exchange Process ◽  
Time Of Flight ◽  
Resolution Time ◽  
Charge Exchange Process

Low Temperature Phase Transition (Pt) and Defect Formation (Df) in Silicon with Dioxide Inclusions Under X-Ray Irradiation

1995 ◽  
Vol 396 ◽  
Author(s):  
SH.M. Makhkamov ◽  
S.N. Abdurakhmanova
Keyword(s):  
Phase Transition ◽  
Charge Exchange ◽  
Defect Formation ◽  
Exchange Process ◽  
Temperature Phase ◽  
X Rays ◽  
Charge Exchange Process ◽  
X Ray ◽  
Temperature Phase Transition ◽  
A Charge

AbstractStudies of galvanomagnetic and electrical parameters of p- type Si : SiO2 in the temperature range 80 – 400 K have shown that X-ray irradiation at 80 K (Mo Ka,β and braking radiation hvmax. = 50 heV) leads to various transformations of the spectrum of electron- hole states in the band gap of such material, depending on the flux density of the X-rays. Two main processes are observed: the defect (vacancy and divacancy) formation and a charge exchange of native defects localized at the Si – SiO2 interface. The charge exchange process is rather collective and stimulated one because it is in response to an X-ray-induced ferroelectric phase transition in the SiO2- phase.

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