scholarly journals Study of electrochemical deposition of Ni-Mo thin films from alkaline electrolytes

2020 ◽  
Author(s):  
Ulviyya Magsud Gurbanova ◽  
Dunya Mahammad Babanly ◽  
Ruhangiz Gurmuz Huseynova ◽  
Dilgam Babir Tagiyev
Keyword(s):  
Thin Films ◽  
Cathode Surface ◽  
Constant Current ◽  
Optimal Conditions ◽  
X Ray Diffraction ◽  
Cyclic Polarization ◽  
Additional Thermal Treatment ◽  
Alkaline Electrolytes ◽  
Diffraction Patterns ◽  
Main Components

The process of co-deposition of Ni with Mo from alkaline electrolytes was studied by taking linear and cyclic polarization curves of Pt electrode at various concentrations of initial components and potential scan rates. Solutions of Na2MoO4∙2H2O and NiSO4∙7H2O were used as sources of ions of the main components in NH4OH electrolyte. It was found that co-deposition of nickel with molybdenum goes through the oxide formation stage, and a solid solution of these two metals is deposited on the cathode surface. The film obtained at constant current on Ni electrode under optimal conditions was found amorphous, but additional thermal treatment at 500 °C for one hour made it polycrystalline. This was confirmed by peaks in X-ray diffraction patterns, corresponding to NiMoO4, Ni, and MoO3. The proposed electrolyte and electrolysis conditions allow to obtain thin films with molybdenum content ranging from 17.1 to 50.9 at.%. The co-deposition of Ni with Mo is limited by diffusion of these ions to the cathode surface. The knowledge of the mechanism of co-deposition of Ni and Mo will make possible a selection of optimal conditions for deposition of alloys of the required composition with satisfactory electrocatalytic properties.

Determining the C60 molecular arrangement in thin films by means of X-ray diffraction

2011 ◽  
Vol 44 (5) ◽  
pp. 983-990 ◽  
Author(s):  
Chris Elschner ◽  
Alexandr A. Levin ◽  
Lutz Wilde ◽  
Jörg Grenzer ◽  
Christian Schroer ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Information ◽  
Grazing Incidence ◽  
Test Material ◽  
C60 Fullerene ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Arrangement ◽  
Diffraction Patterns

The electrical and optical properties of molecular thin films are widely used, for instance in organic electronics, and depend strongly on the molecular arrangement of the organic layers. It is shown here how atomic structural information can be obtained from molecular films without further knowledge of the single-crystal structure. C60 fullerene was chosen as a representative test material. A 250 nm C60 film was investigated by grazing-incidence X-ray diffraction and the data compared with a Bragg–Brentano X-ray diffraction measurement of the corresponding C60 powder. The diffraction patterns of both powder and film were used to calculate the pair distribution function (PDF), which allowed an investigation of the short-range order of the structures. With the help of the PDF, a structure model for the C60 molecular arrangement was determined for both C60 powder and thin film. The results agree very well with a classical whole-pattern fitting approach for the C60 diffraction patterns.

scholarly journals Effect of indium content on X- ray diffraction and optical constants of InxSe1-x thin films

2019 ◽  
Vol 14 (29) ◽  
pp. 55-72
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Optical Constants ◽  
Indium Content ◽  
Degree Of Crystallinity ◽  
X Ray Diffraction ◽  
Dispersion Energy ◽  
X Ray ◽  
Evaporation Technique ◽  
High Indium Content ◽  
Diffraction Patterns

Alloys of InxSe1-x were prepared by quenching technique withdifferent In content (x=10, 20, 30, and 40). Thin films of these alloyswere prepared using thermal evaporation technique under vacuum of10-5 mbar on glass, at room temperature R.T with differentthicknesses (t=300, 500 and 700 nm). The X–ray diffractionmeasurement for bulk InxSe1-x showed that all alloys havepolycrystalline structures and the peaks for x=10 identical with Se,while for x=20, 30 and 40 were identical with the Se and InSestandard peaks. The diffraction patterns of InxSe1-x thin film showthat with low In content (x=10, and 20) samples have semicrystalline structure, The increase of indium content to x=30decreases degree of crystallinity and further increase of indiumcontent to x=40 leads to convert structure to amorphous. Increase ofthickness from 300 to 700nm increases degree of crystallinity for allindium content. Transmittance measurements were used to calculaterefractive index n and the extinction coefficient k using Swanepole’smethod. The optical constants such as refractive index (n), extinctioncoefficient (k) and dielectric constant (εr, εi) increases for low indiumcontent samples and decreases for high indium content samples,while increase of thickness increases optical constants for all xvalues. The oscillator energy E0, dispersion energy Ed, and otherparameters have been determined by Wemple - DiDomenico singleoscillator approach.

Synthesis of Transition-Metal-Oxides Meso-Structured Thin Films

1998 ◽  
Vol 549 ◽  
Author(s):  
H.S. Zhou ◽  
I. Honma
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Self Assembly ◽  
Magnetic Interactions ◽  
X Ray Diffraction ◽  
Structured Materials ◽  
Coating Method ◽  
Diffraction Patterns

AbstractHighly ordered self-assembly organized silica meso-structured architectures have attracted increasing attention because these materials provide a rich source for scientific research and technological applications. This approach to meso-structured materials has been extended to non-silica oxides, especially transition-metal-oxides which might promise applications involving electron transfer or magnetic interactions. We report the syntheses of transition-metal-oxides meso-structured thin films (MSTF), such as TiO2, V2O5, Fe2O3 and Nb2O5, using a surfactant templating processing with spin coating method. X-ray diffraction patterns of the films showed that the films generally oriented in a lamellar structure. The phase transferring in V205 MSTF was also investigated.

Structural Analysis of CdO2(1-X) AlX Thin Films Prepared by Pulsed-Laser Deposition

2021 ◽  
Vol 19 (10) ◽  
pp. 34-40
Author(s):  
B.Y. Taher ◽  
A.S. Ahmed ◽  
Hassan J. Alatta
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Doping Concentration ◽  
Pulsed Laser ◽  
Interplanar Distance ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Diffraction Angle ◽  
Standard Value ◽  
Diffraction Patterns

In this study, CdO2 (1-X) AlX thin films were prepared by pulsed-laser deposition. The X-ray diffraction patterns reveal that the films were polycrystalline with a cubic structure, and the composition of the material changed from CdO at the target to CdO2 in the deposited thin films. The intensity of the diffraction peak (or the texture factor) decreases with increasing hkl and has a maximum value for the (111) plane, the interplanar distance and diffraction angle has a high deviation from the standard value for the (111) plane and. This deviation is affected by doping concentration and shows its highest deviation at a doping concentration of 0.1 wt.% for the (111) and (200), and the 0.3 and 0.5 wt.% for the (210) and (220) planes, respectively. The crystalline size take a less value at plane has a high texture factor that is (111) plane and decreases with increase the doping concentration.

Preparation of Cu2ZnSnS4 Thin Films by Successive Ionic Layer Adsorption and Reaction (SILAR) Method for Supercapacitor Applications

2020 ◽  
Vol 20 (10) ◽  
pp. 6235-6244 ◽  
Author(s):  
A. Murugan ◽  
V. Siva ◽  
A. Shameem ◽  
S. Asath Bahadur
Keyword(s):  
Thin Films ◽  
Electrochemical Behavior ◽  
Electrochemical Impedance ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Layer Adsorption ◽  
Diffraction Patterns ◽  
Czts Thin Films ◽  
Supercapacitor Applications ◽  
Ionic Layer

The Cu2ZnSnS4 (CZTS) thin films have been prepared at different deposition cycles, deposited on a glass substrate by successive ionic layer adsorption and reaction (SILAR) method followed by the annealing process at elevated temperature. The investigations on the films have been carried out to understand and confirm its structure, functional group present, crystalline morphology, optical and electrochemical behavior. The powder X-ray diffraction patterns recorded indicate that the deposited films are formed in the tetragonal structure. Other parameters like grain size, dislocation density, and microstrain are also calculated. The uniform surface of the films with spherical shaped morphology has been observed by Scanning Electron Microscopy, and the elemental compositions have been confirmed by EDAX. Electrochemical behavior such as cyclic voltammetry, electrochemical impedance spectroscopy and galvanostatic charge–discharge analysis have been carried out by electrochemical workstation. The modified electrode exhibits maximum specific capacitance value as 416 F/g for a pure sample. Optical studies have shown that the band gaps are estimated between 1.40 eV and 1.57 eV.

Electrochemical Deposition and Characterization of Cd-Fe-Se Thin Films

2009 ◽  
Vol 68 ◽  
pp. 69-76 ◽  
Author(s):  
S. Thanikaikarasan ◽  
T. Mahalingam ◽  
K. Sundaram ◽  
Tae Kyu Kim ◽  
Yong Deak Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Hexagonal Structure ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Iron Selenide ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
Cadmium Iron Selenide ◽  
Deposited Films

Cadmium iron selenide (Cd-Fe-Se) thin films were deposited onto tin oxide (SnO2) coated conducting glass substrates from an aqueous electrolytic bath containing CdSO4, FeSO4 and SeO2 by potentiostatic electrodeposition. The deposition potentials of Cadmium (Cd), Iron (Fe), Selenium (Se) and Cadmium-Iron-Selenide (Cd-Fe-Se) were determined from linear cathodic polarization curves. The deposited films were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive analysis by x-rays (EDX) and optical absorption techniques, respectively. X-ray diffraction patterns shows that the deposited films are found to be hexagonal structure with preferential orientation along (100) plane. The effect of FeSO4 concentration on structural, morphological, compositional and optical properties of the films are studied and discussed in detail.

Formation and Characteristics of Thin Films of ZrO2-8 mol % Y2O3 Solid Electrolytes

2004 ◽  
Vol 97-98 ◽  
pp. 153-158 ◽  
Author(s):  
Darius Milčius ◽  
L.L. Pranevičius ◽  
V. Širvinskaitė ◽  
T. Šalkus ◽  
A. Kežionis ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Electrolytes ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Cubic Symmetry ◽  
X Ray ◽  
Pulsed Dc ◽  
Pulsed Dc Magnetron Sputtering ◽  
Diffraction Patterns

Thin films of ZrO2-8mol%Y2O3 have been deposed by pulsed DC magnetron sputtering method. The substrates of Ni-cermet and alloy-600 for the films were used. The results of the investigation of the X-ray diffraction patterns and SEM showed that the films are nanocrystalline and belong to cubic symmetry. The relaxation process is related to the ion transport in thin films. The results of the investigation of the temperature dependencies of thin films ionic conductivity (σ) showed that the dependence σ(T) is caused by the temperature dependence of oxygen vacancy mobility, while the number of charge carriers remains constant with temperature.

X-ray diffraction analysis for thin films of PbTiO3-La2/3TiO3 prepared by the sol-gel method

1994 ◽  
Vol 9 (8) ◽  
pp. 2133-2137 ◽  
Author(s):  
Hideki Yoshioka
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Diffraction Method ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
X Ray ◽  
Coating Methods ◽  
Diffraction Patterns ◽  
System 1

Thin films in the system (1 - x) PbTiO3−xLa2/3TiO3 were prepared by the sol-gel and dip-coating methods. Phases deposited in the films and the lattice parameters as a function of the composition were investigated by the x-ray diffraction method. The solid solutions with a perovskite structure were formed as a single phase with x up to 0.9. For the composition of x = 1.0, metastable La-Ti-O perovskite phase with a small amount of the impurity phase, La2Ti2O7, was obtained. Simulation of x-ray diffraction patterns based on the defect structure model shows that the structure of the La-Ti-O perovskite phase includes randomly distributed cation vacancies at the A-site, namely (La2/3□1/3)TiO3.

Deposition of TiO2 Thin Films Using Magnetron Sputtering

2011 ◽  
Vol 217-218 ◽  
pp. 1743-1746
Author(s):  
Xing Long Guo
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Profile Analysis ◽  
Line Profile Analysis ◽  
Analysis Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Average Grain Size ◽  
Diffraction Patterns

TiO2 with 20nm in diameter have been prepared by using magnetron sputtering technique. The structure of these powers was determined by X-ray diffraction experiments. The average grain size and particle size in these powers were measured by the line profile analysis method of X-ray diffraction patterns and by scan electron microscopy, respectively. The thin films were investigated by using XRD, SEM measurements.

Ferroelectric and Ferromagnetic Properties of Co-doped BiFeO3 Thin Films

2010 ◽  
Vol 1256 ◽  
Author(s):  
Danilo G Barrionuevo ◽  
Surinder P Singh ◽  
Ram S Katiyar ◽  
Maharaj S. Tomar
Keyword(s):  
Thin Films ◽  
Magnetic Coupling ◽  
Partial Replacement ◽  
Material System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Solution Route ◽  
Diffraction Patterns ◽  
Novel Devices

AbstractMaterials which possess electrical and magnetic coupling are of great interest for novel devices. Bi(Fe1-xCox)O3 (BFCO) material system was synthesized by solution route for various compositions and thin films were prepared by spin coating on Pt (Pt/Ti/SiO2/Si) substrates. Structural properties of the films were investigated by x-ray diffraction and Raman spectroscopy. X-ray diffraction patterns confirms intense (110) in BiFeO3 and Bi(Fe1-xCox)O3 with rhombohedra distorted perovskite structure without impure phase. Bi(Fe1-xCox)O3 films show week ferroelectric polarization and ferromagnetism at room temperature. Ferroelectric and ferromagnetic coupling could be attributed to the elimination of oxygen vacancies and increased stress in the crystal structure by partial replacement of Fe2+ ion by Co2+ ion.

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