scholarly journals Exploring the influence of renal dysfunction on the pharmaco-kinetics of ribavirin after oral and intravenous dosing

2014 ◽  
Vol 8 (2) ◽  
pp. 89-95 ◽  
Author(s):  
Samir K. Gupta ◽  
Bhavna Kantesaria ◽  
Paul Glue
Keyword(s):  
Renal Dysfunction ◽  
Kinetics Of ◽  
Oral And Intravenous Dosing

The kinetics of metamizol and its metabolites in critical-care patients with acute renal dysfunction

1993 ◽  
Vol 45 (5) ◽  
pp. 445-450 ◽  
Author(s):  
G. Heinemeyer ◽  
H. -J. Gramm ◽  
I. Roots ◽  
R. Dennhardt ◽  
W. Simgen
Keyword(s):  
Critical Care ◽  
Renal Dysfunction ◽  
Acute Renal Dysfunction ◽  
Kinetics Of ◽  
Critical Care Patients

scholarly journals Επίδραση συνεχούς φλεβοφλεβικής αιμοδιήθησης στην αιμοδυναμική και αναπνευστική λειτουργία, στην πρόγνωση καθώς και στην κινητική κυτταροκινών βαρειά σηπτικών ασθενών της ΜΕΘ

2011 ◽  
Author(s):  
Κωνσταντίνος Περρέας
Keyword(s):  
Severe Sepsis ◽  
Renal Dysfunction ◽  
Respiratory Function ◽  
Cytokine Production ◽  
Therapeutic Benefits ◽  
Septic Episode ◽  
Tnf Α ◽  
Multiple Blood ◽  
High Concentrations ◽  
Kinetics Of

Introduction Renal dysfunction and failure is a common consequence of the frequently encountered sepsis affecting critically ill patients. This is managed amongst others with the use of continuous renal replacement methods. This study was intended to explore the effects of CCRT beyond the established therapeutic benefits on the patients’ haemodynamics, organ dysfunction and cytokine kinetics of the SIRS that chracterise this multifacet syndrome. Questions that we set to answer in detail: Does CVVH influence cytokine kinetics for cytokines TNF-α, IL-6 and IL-1β ? How does it affect patient haemodynamics? How does it affect prognosis? We conducted 3 studies: A. Pilot study We measured clearance and concentrations of the cytokines under investigation in multiple blood and ultrafiltrate specimens and varying CVVH settings in 9 septic patients receiving renal replacement for acute renal failure. Results: We confirmed constantly high concentrations as well as brief bursts of cytokine production. The preferred circuit and flow for maximal clearance was set. B. Study no. 2 Hypothesis : Does CVVH improve haemodynamic and respiratory function? Method: 36 patients with severe sepsis were monitored for indices of haemodynamic and respiratory function while on CVVH. The filter was discontinued for 12 hrs for control within the cohort. Results: MAP, SVR and vasopressor requirements improved during CVVH with transient worsening during discontinuation. These differences were more pronounced in the group of patients that survived. C. Study no. 3 Hypothesis: Is the effected imroved haemodynamic status linked with imroved survival when applied as early as possible in patients with renal dysfunction? How does this affect cytokine kinetics? Methods: 30 consecutive patients with severe sepsis and/or septic shock were included in the study. CVVH was instituted as early as possible upon establishment of renal dysfunction. Clinical and laboratory indices of MOF were measured daily and plasma and ultrafiltrate specimens were taken and the investigated cytokines measured. Results: Of the measured indices MAP, SVR, CI as well as Pa02/Fi02 all improved during the course of the study, while in some of them there were also baseline differences (pre-CVVH) between survivors and non-survivors. Cytokine clearance and absorption on the membrane were quantified. Sieving coefficients were calculated for TNF- α and IL-6. A multivariate analysis of statistically significant differences between survivors and non-survivors revealed earlier institution of CVVH in the duration of the septic episode as the strongest predictor of survival.

Direct observations of radiation-enhanced transformations in glass

1983 ◽  
Vol 41 ◽  
pp. 354-355
Author(s):  
J. F. DeNatale ◽  
D. G. Howitt
Keyword(s):  
Glass Matrix ◽  
Diffusion Mechanism ◽  
Bubble Formation ◽  
Silicate Glasses ◽  
Phase Decomposition ◽  
Direct Observations ◽  
Thin Foils ◽  
Oxygen Bubble ◽  
Electron Energy Loss ◽  
Kinetics Of

The electron irradiation of silicate glasses containing metal cations produces various types of phase separation and decomposition which includes oxygen bubble formation at intermediate temperatures figure I. The kinetics of bubble formation are too rapid to be accounted for by oxygen diffusion but the behavior is consistent with a cation diffusion mechanism if the amount of oxygen in the bubble is not significantly different from that in the same volume of silicate glass. The formation of oxygen bubbles is often accompanied by precipitation of crystalline phases and/or amorphous phase decomposition in the regions between the bubbles and the detection of differences in oxygen concentration between the bubble and matrix by electron energy loss spectroscopy cannot be discerned (figure 2) even when the bubble occupies the majority of the foil depth.The oxygen bubbles are stable, even in the thin foils, months after irradiation and if van der Waals behavior of the interior gas is assumed an oxygen pressure of about 4000 atmospheres must be sustained for a 100 bubble if the surface tension with the glass matrix is to balance against it at intermediate temperatures.

Irradiation behavior of pyrolytic silicon carbide

1983 ◽  
Vol 41 ◽  
pp. 72-73
Author(s):  
R. J. Lauf
Keyword(s):  
Silicon Carbide ◽  
Fission Products ◽  
Thermodynamics And Kinetics ◽  
Neutron Fluences ◽  
Fuel Particles ◽  
Sic Coatings ◽  
Irradiation Behavior ◽  
Kinetics Of ◽  
Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

Investigation of irradiation-induced nucleation processes in silicon and germanium

1995 ◽  
Vol 53 ◽  
pp. 224-225
Author(s):  
Harry A. Atwater ◽  
C.M. Yang ◽  
K.V. Shcheglov
Keyword(s):  
Room Temperature ◽  
Crystal Size ◽  
Initial Distribution ◽  
Engineering Control ◽  
Size Evolution ◽  
Silicon And Germanium ◽  
Ge Quantum Dot ◽  
And Control ◽  
Germanium Quantum Dots ◽  
Kinetics Of

Studies of the initial stages of nucleation of silicon and germanium have yielded insights that point the way to achievement of engineering control over crystal size evolution at the nanometer scale. In addition to their importance in understanding fundamental issues in nucleation, these studies are relevant to efforts to (i) control the size distributions of silicon and germanium “quantum dots𠇍, which will in turn enable control of the optical properties of these materials, (ii) and control the kinetics of crystallization of amorphous silicon and germanium films on amorphous insulating substrates so as to, e.g., produce crystalline grains of essentially arbitrary size.Ge quantum dot nanocrystals with average sizes between 2 nm and 9 nm were formed by room temperature ion implantation into SiO2, followed by precipitation during thermal anneals at temperatures between 30°C and 1200°C[1]. Surprisingly, it was found that Ge nanocrystal nucleation occurs at room temperature as shown in Fig. 1, and that subsequent microstructural evolution occurred via coarsening of the initial distribution.

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