scholarly journals Mode I Critical Stress Intensity Factor of Beech Wood (Fagus Sylvatica) in a TL Configuration: A Comparison of Different Methods

2013 ◽  
Vol 64 (3) ◽  
pp. 221-229 ◽  
Author(s):  
Miran Merhar ◽  
Dominika Gornik Bučar ◽  
Bojan Bučar
Holzforschung ◽  
2011 ◽  
Vol 65 (5) ◽  
Author(s):  
Hiroshi Yoshihara ◽  
Ami Usuki

Abstract The critical stress intensity factor of mode I (K Ic) obtained by compact tension (CT) tests of wood and medium-density fiberboard (MDF) was experimentally and numerically analyzed. A double cantilever beam (DCB) test was also conducted and the results were compared with those of the CT tests. Similar to the results of single-edge-notched bending (SENB) and single-edge-notched tension (SENT) tests previously conducted, the value of K Ic was obtained properly from the CT test when an additional crack length was taken into account.


Holzforschung ◽  
2010 ◽  
Vol 64 (4) ◽  
Author(s):  
Hiroshi Yoshihara

Abstract The critical stress intensity factor of mode I (K Ic) obtained by single-edge-notched bending (SENB) tests of wood was experimentally and numerically analyzed. A double cantilever beam (DCB) test was also conducted and the results were compared with those of SENB tests. The K Ic value was obtained by introducing an additional crack length into the equations used for analyzing the SENB test of isotropic material when the initial crack length ranged from 0.1 to 0.6 times the depth of the specimen.


Holzforschung ◽  
2010 ◽  
Vol 64 (6) ◽  
Author(s):  
Hiroshi Yoshihara

Abstract The mode I critical stress intensity factor K Ic for wood and medium-density fiberboard (MDF) was obtained by conducting the single-edge-notched tension (SENT) test, designed for isotropic materials, under various loading conditions, and performing subsequent numerical analysis on the test data. The validity of the SENT test for this purpose was examined by conducting double cantilever beam (DCB) tests and comparing test data with those of the SENT tests. The best values of K Ic are obtained by conducting the SENT test under pin loading and introducing an additional crack length into the equations used for analyzing the test data.


2004 ◽  
Vol 854 ◽  
Author(s):  
I. Chasiotis ◽  
S.W. Cho ◽  
K. Jonnalagadda

ABSTRACTDirect measurements of Mode-I critical stress intensity factor and crack tip displacements were conducted in the vicinity of atomically sharp edge cracks in polycrystalline silicon MEMS using our in situ Atomic Force Microscopy (AFM)/Digital Image Correlation (DIC) method. The average Mode-I critical stress intensity factor for various fabrication runs was 1.00 ± 0.1 MPa√m. The experimental crack tip displacement fields were in very good agreement with linear elastic fracture mechanics solutions. By means of an AFM, direct experimental evidence of incremental crack growth in polycrystalline silicon was obtained for the first time via spatially resolved crack growth measurements. The incremental crack growth in brittle polysilicon is attributed to its locally anisotropic polycrystalline structure which also results in different local and macroscopic (apparent) stress intensity factors.


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