scholarly journals DFT based investigation of the structural, magnetic, electronic, and half-metallic properties of solid In1-xTixSb solutions

2021 ◽  
Vol 24 (4) ◽  
pp. 43704
Author(s):  
S. Amrani ◽  
M. Berber ◽  
M. Mebrek
Keyword(s):  
Experimental Data ◽  
Magnetic Properties ◽  
Fermi Level ◽  
Spin Polarization ◽  
First Principles ◽  
Magnetic Moments ◽  
Ionic Character ◽  
Half Metallic ◽  
Electronic And Magnetic Properties ◽  
Substitutional Doping

With the intention to reveal the effect of the substitution, Ti-doped InSb alloy, we accomplished a first-principles prediction within the FPLAPW+lo method. We used GGA-PBEsol scheme attached with the improved TB-mBJ approach to predict structural, electronic, and magnetic properties of In1-xTixSb with concentration x=0, 0.125, 0.25, 0.50, 0.75, 0.875, and 1. Our lattice parameters are found in favorable agreement with the available theoretical and experimental data. The calculation shows that all structures are energetically stable. The substitutional doping transforms the ionic character of the InSb compound in half-metallic ferromagnetic comportment for concentration x = 0, 0.125, 0.25, and 0.50, with a spin polarization of 100% at the Fermi level, and metallic nature for In0.25Ti0.75Sb and In0.125Ti0.875Sb. The total magnetic moments are also estimated at about 1 mu;B. In0.875Ti0.125Sb, In0.75Ti0.25Sb, and In0.50Ti0.50Sb have half-metallic ferromagnets comportment and they can be upcoming applicants for spintronics applications.

scholarly journals Pressure dependent half-metallic ferromagnetism in inverse Heusler alloy Fe2CoAl: a DFT+U calculations

RSC Advances ◽  
2020 ◽  
Vol 10 (73) ◽  
pp. 44633-44640
Author(s):  
D. P. Rai ◽  
Lalrinkima ◽  
Lalhriatzuala ◽  
L. A. Fomin ◽  
I. V. Malikov ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Curie Temperature ◽  
First Principles ◽  
Heusler Alloy ◽  
Computational Method ◽  
Half Metallic ◽  
Electronic And Magnetic Properties ◽  
Full Heusler ◽  
Metallic Ferromagnetism ◽  
Half Metallic Ferromagnetism

We report the electronic and magnetic properties along with the Curie temperature (TC) of the inverse full Heusler alloy (HA) Fe2CoAl obtained using the first-principles computational method.

scholarly journals Electronic Structure and Energy Band of IIIA Doped Group ZnO Nanosheets

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Xian-Yang Feng ◽  
Zhe Wang ◽  
Chang-Wen Zhang ◽  
Pei-Ji Wang
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Band Gap ◽  
First Principles ◽  
Energy Band ◽  
Half Metallic ◽  
Electronic And Magnetic Properties ◽  
Zno Nanosheets ◽  
Doped Zno

The electronic and magnetic properties of IIIA group doped ZnO nanosheets (ZnONSs) are investigated by the first principles. The results show that the band gap of ZnO nanosheets increases gradually along with Al, Ga, and In ions occupying Zn sites and O sites. The configuration of Al atoms replacing Zn atoms is more stable than other doped. The system shows half-metallic characteristics for In-doped ZnO nanosheets.

Tuning the electronic and magnetic properties of Mn-doped graphene by gas adsorption and effect of external electric field: First-principles study

2019 ◽  
Vol 33 (16) ◽  
pp. 1950166
Author(s):  
Huan Ma ◽  
Ling Ma ◽  
Liang-Cai Ma
Keyword(s):  
Magnetic Properties ◽  
Electric Field ◽  
External Electric Field ◽  
Spin Polarization ◽  
First Principles ◽  
Density Functional ◽  
Gas Adsorption ◽  
Electronic And Magnetic Properties ◽  
Doped Graphene ◽  
Mn Doped

The effect of gas molecule (H2CO, NO, NO2, O2 and SO2) adsorption on the electronic and magnetic properties of Mn-doped graphene (MnG) is investigated by first-principles calculations in the framework of density functional theory (DFT). Our study reveals that after H2CO, NO, NO2 and SO2 adsorption, MnG transforms from half-metal to semiconductor, and this transformation indicates that MnG’s conductivity is changed significantly. Meanwhile, O2 adsorption has no influence on MnG’s original electronic property. Therefore, the substrate of MnG is highly sensitive to H2CO, NO, NO2 and SO2. The reconfiguration of electron distribution caused by gas adsorption dramatically alters the spin polarization distribution of the combined system, that is, NO2 and H2CO adsorption leads to local spin polarization, whereas O2, NO and SO2 adsorption result in complete spin polarization. In addition, the external electric field (E-field) is varied from −0.50 V/Å to +0.50 V/Å then applied to the adsorption system. A strong interaction is observed between gas and MnG with a positive E-field as reflected in the enhancement of adsorption energy. The interaction is obviously weakened by introducing the E-field in the negative direction. Hence, the adsorption strength and sensitivity of gas on MnG can be effectively tuned by the E-field. The results can serve as useful references for the design of graphene-based gas sensor.

scholarly journals Ferrimagnetic half-metallic properties of Cr/Fe δ doped MoS2 monolayer

RSC Advances ◽  
2017 ◽  
Vol 7 (33) ◽  
pp. 20116-20122 ◽  
Author(s):  
M. D. Xie ◽  
C. G. Tan ◽  
Pan Zhou ◽  
J. G. Lin ◽  
L. Z. Sun
Keyword(s):  
Magnetic Properties ◽  
First Principles ◽  
First Principles Calculations ◽  
Half Metallic ◽  
Electronic And Magnetic Properties ◽  
Mos2 Monolayer

From first-principles calculations, Cr/Fe δ-type doping effectively modulates electronic and magnetic properties of monolayer MoS2. Compared with ferromagnetic half-metallic Fe δ-type doped MoS2, Cr and Fe alternately δ-type codoped MoS2 is ferrimagnetic and half-metallic.

ELECTRONIC AND MAGNETIC PROPERTIES OF SILICENE AND SILICANE NANORIBBONS

2013 ◽  
Vol 02 (02) ◽  
pp. 1350011 ◽  
Author(s):  
KAI LI ◽  
ANNA SHIN HWA LEE ◽  
YONG-WEI ZHANG ◽  
HUI PAN
Keyword(s):  
Magnetic Properties ◽  
First Principles ◽  
Magnetic Moments ◽  
Ground States ◽  
Band Gaps ◽  
Metastable States ◽  
First Principles Calculations ◽  
Ribbon Width ◽  
Electronic And Magnetic Properties ◽  
Silicene Nanoribbons

In this paper, first-principles calculations are carried out to study the electronic and magnetic properties of silicene and silicane nanoribbons, with and without H -passivation at the edges. We predict that the armchair nanoribbons are nonmagnetic and semiconducting. Interestingly, the band gaps of armchair silicene nanoribbons show oscillating behavior as the ribbon width increases. When their edges are passivated with H atoms, However, the oscillating phase is reversed. The zigzag nanoribbons are anti-ferromagnetic and semiconducting in their ground states, except that the zigzag silicane nanoribbons with edges passivated by H atoms are nonmagnetic. The zigzag silicane nanoribbons with bare edges show the highest magnetic moments in their ground states. The band gaps of zigzag nanoribbons in their ground states decrease with the increment of width. The metastable states of zigzag silicene nanoribbons are ferromagnetic and metallic. The zigzag silicane nanoribbons with bare edges are ferromagnetic and semiconducting in their metastable states. The silicene/silicane nanoribbons with attractive functions, which are achievable by edge engineering or external fields, may be applied to spintronic technologies and nanodevices.

First-principles study on the electronic and magnetic properties of the Zn0.75Mo0.25M(M = S,Se,Te)

2016 ◽  
Vol 30 (19) ◽  
pp. 1650249 ◽  
Author(s):  
Zhu-Hua Yin ◽  
Jian-Min Zhang ◽  
Ke-Wei Xu
Keyword(s):  
Magnetic Properties ◽  
Fermi Level ◽  
First Principles ◽  
Atomic Radius ◽  
Band Gaps ◽  
First Principles Calculation ◽  
Spintronic Devices ◽  
Lattice Constants ◽  
Electronic And Magnetic Properties ◽  
Tetrahedral Crystal

The geometrical, electronic and magnetic properties of the Zn[Formula: see text]Mo[Formula: see text]M (M[Formula: see text]=[Formula: see text]S, Se and Te) have been studied by spin-polarized first-principles calculation. The optimized lattice constants of 5.535, 5.836 and 6.274 Å for M[Formula: see text]=[Formula: see text]S, Se and Te are related to the atomic radius of 1.09, 1.22 and 1.42 Å for S, Se and Te atoms, respectively. The Zn[Formula: see text]Mo[Formula: see text]M are magnetic half-metallic (HM) with the spin-down conventional band gaps of 2.899, 2.126 and 1.840 eV, while the HM band gaps of 0.393, 0.016 and 0.294 eV for M[Formula: see text]=[Formula: see text]S, Se and Te, respectively. At the Fermi level, the less than half-filled Mo-[Formula: see text] orbital hybridizated with the less M-[Formula: see text] orbital contributes only spin-up channel leading Zn[Formula: see text]Mo[Formula: see text]M an HM ferromagnetism. The tetrahedral crystal field formed by adjacent three Zn atoms and one M atom splits the spin-up channel (majority spin) of Mo-[Formula: see text] orbital into three-fold degenerate [Formula: see text] states at the Fermi level and double degenerate [Formula: see text] [Formula: see text] states below the Fermi level. The exchange splitting energies of the Zn[Formula: see text]Mo[Formula: see text]M are −2.611, −2.231 and −1.717 eV for M[Formula: see text]=[Formula: see text]S, Se and Te, respectively. The results provide an useful theoretical guidance for Zn[Formula: see text]Mo[Formula: see text]M applications in spintronic devices.

ELECTRONIC AND MAGNETIC PROPERTIES OF MONOLAYER WS2 DOPED WITH MnXm (m = 0, 3, 6; = N, O, F)

2015 ◽  
Vol 22 (06) ◽  
pp. 1550071 ◽  
Author(s):  
JIAREN YUAN ◽  
XIAOHONG YAN ◽  
CHANGJIE DAI ◽  
YANG XIAO ◽  
YANDONG GUO
Keyword(s):  
Magnetic Properties ◽  
First Principles ◽  
Promising Material ◽  
Half Metallic ◽  
Spintronic Device ◽  
Electronic And Magnetic Properties ◽  
Calculation Results

The structural, electronic and magnetic properties of monolayer WS 2 doped with single Mn atom, MnX 3 and MnX 6 clusters ( X = N , O and F ) are investigated using first principles approach. Monolayer WS 2 doped with single Mn atom displays a spin gapless semiconducting character. WS 2 embedded with MnX 3 and MnX 6 presents rich electronic and magnetic properties. For example, monolayer WS 2 incorporated with MnF 3 exhibits a half-metallic nature. The substitutions of impurities introduce magnetism except MnN 3. The calculation results demonstrate that monolayer WS 2 is a promising material for spintronic device when doped with MnX m.

Half-metallic and magnetic semiconducting behaviors of metal-doped blue phosphorus nanoribbons from first-principles calculations

2018 ◽  
Vol 20 (11) ◽  
pp. 7635-7642 ◽  
Author(s):  
Si-Cong Zhu ◽  
Cho-Tung Yip ◽  
Shun-Jin Peng ◽  
Kai-Ming Wu ◽  
Kai-Lun Yao ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Metal Atom ◽  
First Principles ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Half Metallic ◽  
Electronic And Magnetic Properties ◽  
Metal Doped ◽  
Blue Phosphorene

We investigate the electronic and magnetic properties of substitutional metal atom impurities in two-dimensional (2D) blue phosphorene nanoribbons using first-principles calculations.

Structural, electronic, and magnetic properties of CrMnX (X = Ge, Se, Si, and Sn) compounds

2020 ◽  
Vol 98 (3) ◽  
pp. 291-296 ◽  
Author(s):  
Shabbir Ahmed ◽  
M. Shakil ◽  
Muhammad Zafar ◽  
M.A. Choudhary ◽  
T. Iqbal
Keyword(s):  
Magnetic Properties ◽  
Bulk Modulus ◽  
Density Functional ◽  
Magnetic Moments ◽  
Compositional Variation ◽  
Band Structure Calculation ◽  
Full Potential ◽  
Metallic Behavior ◽  
Half Metallic ◽  
Electronic And Magnetic Properties

We have studied the structural, electronic, and magnetic properties of CrMnX (X = Ge, Se, Si, and Sn) compounds. The first principles band structure calculation within the framework of density functional theory was used to explore these properties. The full-potential linearized augmented plane wave (FP-LAPW) method as implemented in the Wien2k software package has been used. We investigated the effect of compositional variation on lattice constants, bulk modulus, electronic, and magnetic properties. CrMnSi has the largest while CrMnSe has the smallest bulk modulus among the studied compounds. Our calculated electronic and magnetic properties for CrMnX (X = Ge, Se, Si, and Sn) compounds show that CrMnGe, CrMnSe, and CrMnSi are half-metallic materials with integer magnetic moments while CrMnSn has metallic behavior. These compounds are fascinating for spintronic devices due to their half-metallic properties.

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