scholarly journals Integer quantum Hall effect and topological phase transitions in silicene

2017 ◽  
Vol 20 (4) ◽  
pp. 43701 ◽  
Author(s):  
Liu ◽  
Luo ◽  
Xu ◽  
Tian ◽  
Ren
Keyword(s):  
Phase Transitions ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Topological Phase ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum ◽  
Topological Phase Transitions

scholarly journals Many-body integer quantum Hall effect: Evidence for new phase transitions

1994 ◽  
Vol 72 (5) ◽  
pp. 728-731 ◽  
Author(s):  
S. Q. Murphy ◽  
J. P. Eisenstein ◽  
G. S. Boebinger ◽  
L. N. Pfeiffer ◽  
K. W. West
Keyword(s):  
Phase Transitions ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Many Body ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum ◽  
New Phase

scholarly journals On the equivalence between magnetic-field-induced phase transitions in the integer quantum Hall effect

2003 ◽  
Vol 126 (4) ◽  
pp. 197-201 ◽  
Author(s):  
C.F. Huang ◽  
Y.H. Chang ◽  
H.H. Cheng ◽  
Z.P. Yang ◽  
S.Y. Wang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Phase Transitions ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

scholarly journals An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

2021 ◽  
Vol 7 (8) ◽  
pp. eabf1388
Author(s):  
Phillip Dang ◽  
Guru Khalsa ◽  
Celesta S. Chang ◽  
D. Scott Katzer ◽  
Neeraj Nepal ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electron Gas ◽  
Quantum Hall ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
2D Electron Gas ◽  
Integer Quantum Hall Effect ◽  
Topological Quantum ◽  
Integer Quantum

Creating seamless heterostructures that exhibit the quantum Hall effect and superconductivity is highly desirable for future electronics based on topological quantum computing. However, the two topologically robust electronic phases are typically incompatible owing to conflicting magnetic field requirements. Combined advances in the epitaxial growth of a nitride superconductor with a high critical temperature and a subsequent nitride semiconductor heterostructure of metal polarity enable the observation of clean integer quantum Hall effect in the polarization-induced two-dimensional (2D) electron gas of the high-electron mobility transistor. Through individual magnetotransport measurements of the spatially separated GaN 2D electron gas and superconducting NbN layers, we find a small window of magnetic fields and temperatures in which the epitaxial layers retain their respective quantum Hall and superconducting properties. Its analysis indicates that in epitaxial nitride superconductor/semiconductor heterostructures, this window can be significantly expanded, creating an industrially viable platform for robust quantum devices that exploit topologically protected transport.

Publisher’s Note: Charge Fractionalization in the Integer Quantum Hall Effect [Phys. Rev. Lett. 112, 166801 (2014)]

2014 ◽  
Vol 112 (18) ◽  
Author(s):  
Hiroyuki Inoue ◽  
Anna Grivnin ◽  
Nissim Ofek ◽  
Izhar Neder ◽  
Moty Heiblum ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum ◽  
Charge Fractionalization
Sign in / Sign up

Export Citation Format

Share Document