scholarly journals Enhancement of Resistance Switching in Electrodeposited Co-ZnO Films

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
Dewei Chu ◽  
Adnan Younis ◽  
Sean Li
Keyword(s):  
Surface Morphology ◽  
Lattice Structure ◽  
Resistance Switching ◽  
Zno Films ◽  
Dopant Distribution ◽  
High Quality ◽  
Co Doping ◽  
Doped Zno ◽  
Deposited Films ◽  
Co Doped

High quality Co-doped ZnO films were prepared with electrodeposition. The correlation among the surface morphology, lattice structure, Co-dopant distribution, and resistance switching properties of the as-deposited films were investigated. It is found that resistance switching behaviour could be manipulated by controlling the composition of Co in the ZnO films. The significant enhancement of resistance switching was achieved with 5 at% Co doping in the films, and the possible switching mechanism was also discussed.

Photoluminescence, ellipsometric, optical and morphological studies of sprayed Co-doped ZnO films

2016 ◽  
Vol 30 (15) ◽  
pp. 1650171 ◽  
Author(s):  
O. Gençyılmaz ◽  
F. Atay ◽  
İ. Akyüz
Keyword(s):  
Refractive Index ◽  
Surface Properties ◽  
Extinction Coefficient ◽  
Zno Films ◽  
Optical Parameters ◽  
Pl Spectra ◽  
Co Doping ◽  
Morphological Studies ◽  
Doped Zno ◽  
Co Doped

In this study, undoped and cobalt (Co)-doped zinc oxide (ZnO) films were successfully produced by ultrasonic spray pyrolysis (USP) technique at low temperature (350[Formula: see text]C). The optical and surface properties were investigated as a function of Co content. The optical parameters (thickness, refractive index and extinction coefficient) were determined using spectroscopic ellipsometry (SE) and it was seen that the refractive index and extinction coefficient values of Co-doped ZnO films decreased slightly depending on the increasing of Co doping. For investigation, the transmittance and photoluminescence (PL) spectra of the films, UV–Vis spectrophotometer and PL spectroscopy were used at room temperature. The transmittance spectra show that transmittance values decreased and Co[Formula: see text] ions substitute Zn[Formula: see text] ions of ZnO lattice. The optical band gap values decreased from 3.26 eV to 2.85 eV with the changing of Co content. The results of PL spectra exhibit the position of the different emission peaks unchanged but the intensity of peaks increased with increasing Co doping. Also, the surface properties of the films were obtained by atomic force microscopy (AFM) and these results indicated that the surface morphology and roughness values were prominently changed with Co doping.

Effect of N and P codoping on ZnO properties

2013 ◽  
Vol 645 ◽  
pp. 64-67 ◽  
Author(s):  
Jin Zhong Wang ◽  
Elangovan Elamurugu ◽  
Hong Tao Li ◽  
Shu Jie Jiao ◽  
Lian Cheng Zhao ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Atomic Ratio ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Nitrogen And Phosphorus ◽  
X Ray ◽  
Co Doping ◽  
Glass Substrates ◽  
Doped Zno ◽  
Co Doped

Nitrogen and Phosphorus co-doped (N+P)- zinc oxide (ZnO) films were RF sputtered on corning glass substrates at 350 °C and comparatively studied with undoped, N-, and P- doped ZnO. X-ray diffraction spectra confirmed that the ZnO structure with a preferred orientation along direction. Scanning electron microscope analysis showed different microstructure for the N+P co-doping, and thus probably confirming the co-existence of both the dopants. X-ray photoelectron spectroscopy spectra revealed that the chemical composition in N+P co-doped ZnO are different from that found in undoped, N-, and P- doped ZnO. The atomic ratio of N and P in N+P co-doped ZnO is higher than that in single N or P doped ZnO. One broad ZnO emission peak around 420 nm is observed in photoluminescence spectra. The relative intensity of the strongest peak obtained from co-doped ZnO films is about twice than the P- doped and thrice than the pure and N- doped films.

Ga-Sn Co-Doped ZnO Films via Sol-Gel Route

2018 ◽  
Vol 280 ◽  
pp. 43-49
Author(s):  
Zi Neng Ng ◽  
Kah Yoong Chan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Band Gap ◽  
Doping Concentration ◽  
Sol Gel ◽  
Zno Films ◽  
Axis Orientation ◽  
Co Doping ◽  
Doped Zno ◽  
Co Doped

Zinc oxide (ZnO) has gained worldwide attention due to its direct wide band gap and large exciton binding energy, which are important properties in the application of emerging optoelectronic devices. By doping ZnO with donor elements, a combination of good n-type conductivity and good transparency in the visible and near UV range can be achieved. Co-doping ZnO with several types of dopants is also beneficial in improving the electronic properties of ZnO films. To the best of our knowledge, the fundamental properties of gallium-tin (Ga-Sn) co-doped ZnO (GSZO) films were rarely explored. In this work, we attempt to coat GSZO films on glass substrates via sol-gel spin-coating method. The Ga-Sn co-doping ratio was fixed at 1:1 and the concentration of the dopants was varied at 0.5, 1.0, 1.5, and 2 at.% with respect to the precursor. The AFM image show granular features on the morphology of all GSZO films. All samples also exhibit a preferential c-axis orientation as detected by XRD. The XRD indicates higher crystal quality and larger crystallite size on GSZO thin films at 2.0 at.% and agrees well with the AFM results. However, the transparency and optical band-gap of the GSZO thin films degrade with higher co-doping concentration. The best electrical properties were achieved at co-doping concentration of 1 at.% with conductivity and carrier density of 7.50 × 10-2S/cm and 1.37 × 1016cm-3, respectively. At 1.0 at.% co-doping concentration, optimal optical transmittance and electrical properties were achieved, making it promising in the application of optoelectronics.

Structural, Optical and Magnetic Properties of Nanocrystalline Co-Doped ZnO Thin Films Grown by Sol–Gel

2017 ◽  
Vol 73 (1) ◽  
pp. 13-21 ◽  
Author(s):  
Zohra Nazir Kayani ◽  
Iqra Shah ◽  
Bareera Zulfiqar ◽  
Saira Riaz ◽  
Shahzad Naseem ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Sol Gel ◽  
Hexagonal Wurtzite Structure ◽  
Magnetic Surface ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Doped Zno ◽  
Co Doped

AbstractCobalt-doped ZnO thin films have been deposited using a sol–gel route by changing the number of coats on the substrate from 6 to 18. This project deals with various film thicknesses by increasing the number of deposited coats. The effect of thickness on structural, magnetic, surface morphology and optical properties of Co-doped ZnO thin film was studied. The crystal structure of the Co-doped ZnO films was investigated by X-ray diffraction. The films have polycrystalline wurtzite hexagonal structures. A Co2+ ion takes the place of a Zn2+ ion in the lattice without creating any distortion in its hexagonal wurtzite structure. An examination of the optical transmission spectra showed that the energy band gap of the Co-doped ZnO films increased from 3.87 to 3.97 eV with an increase in the number of coatings on the substrate. Ferromagnetic behaviour was confirmed by measurements using a vibrating sample magnetometer. The surface morphology of thin films was assessed by scanning electron microscope. The grain size on the surface of thin films increased with an increase in the number of coats.

Transport mechanisms in Co-doped ZnO (ZCO) and H-irradiated ZCO polycrystalline thin films

2021 ◽  
Vol 23 (3) ◽  
pp. 2368-2376
Author(s):  
A. Di Trolio ◽  
A. Amore Bonapasta ◽  
C. Barone ◽  
A. Leo ◽  
G. Carapella ◽  
...  
Keyword(s):  
Thin Films ◽  
Opposite Effect ◽  
Transport Mechanisms ◽  
Co Doping ◽  
Polycrystalline Thin Films ◽  
Doped Zno ◽  
Co Doped

Co doping increases the ZnO resistivity (ρ) at high T (HT), whereas it has an opposite effect at low T (LT). H balances the Co effects by neutralizing the ρ increase at HT and strengthening its decrease at LT.

Substrate temperature and thickness dependence of properties of boron and gallium co-doped ZnO films

2016 ◽  
Vol 33 (4) ◽  
pp. 270-275 ◽  
Author(s):  
J. Yang ◽  
J. Huang ◽  
Y. X. Lu ◽  
H. H. Ji ◽  
L. Zhang ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Thickness Dependence ◽  
Zno Films ◽  
Doped Zno ◽  
Co Doped

Structural, optical and magnetic properties of Co-doped ZnO films

2006 ◽  
Vol 296 (2) ◽  
pp. 135-140 ◽  
Author(s):  
Xue-Chao Liu ◽  
Er-Wei Shi ◽  
Zhi-Zhan Chen ◽  
Hua-Wei Zhang ◽  
Li-Xin Song ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Zno Films ◽  
Optical And Magnetic Properties ◽  
Doped Zno ◽  
Co Doped

Effect of RF power and substrate temperature on the properties of boron and gallium co-doped ZnO films

2016 ◽  
Vol 53 ◽  
pp. 84-88 ◽  
Author(s):  
Jin Yang ◽  
Jian Huang ◽  
Huanhuan Ji ◽  
Ke Tang ◽  
Lei Zhang ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Zno Films ◽  
Rf Power ◽  
Doped Zno ◽  
Co Doped

Wide Band Gap Al and In Co-doped ZnO Films for Near-Infrared Plasmonic Application

Plasmonics ◽  
2021 ◽  
Author(s):  
Soumya Kannoth ◽  
Packia Selvam Irulappan ◽  
Sandip Dhara ◽  
Sankara Narayanan Potty
Keyword(s):  
Band Gap ◽  
Near Infrared ◽  
Wide Band ◽  
Zno Films ◽  
Wide Band Gap ◽  
Doped Zno ◽  
Co Doped
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