Atomic Force Microscopy (AFM) for Rubber

2008 ◽  
Vol 81 (3) ◽  
pp. 359-383 ◽  
Author(s):  
Lili L. Johnson

Abstract In this review, first, the development of atomic force microscopy as an imaging technique, as a surface force apparatus, and as a nanoindenter was illustrated using experimental studies. The experimental analysis of atomic force microscopy emphasizes the empirical methods of achieving high resolution imaging through controlled forces between tip and sample interactions. Second, mapping mechanical properties on nanometer scale by atomic force microscopy is presented with both experimental investigations and selection of elastic models. Elastomer crosslink density was mapped using atomic force microscopy combined with elastic theories. The force — penetration depth investigation of crosslink density for elastomer by AFM shows linear correction with both experimental studies using Dynamic Mechanical Thermal Analysis (DMTA) and classic swelling method and calculation using statistical rubber elasticity theory. Last, the focus is on the understanding of atomic force microscopy for practical applications. Filler dispersion and blends structure are demonstrated for automotive applications. Micro phase separation was intensely studied for film industries. Morphology of composites is investigated for the applications of tire, automotive and foaming industries.

2014 ◽  
Vol 894 ◽  
pp. 374-378 ◽  
Author(s):  
Oleg A. Ageev ◽  
Natalie I. Alyabieva ◽  
Boris G. Konoplev ◽  
Vladimir A. Smirnov ◽  
Vladislav V. Tkachuk

The work presents the results of theoretical and experimental investigations of the features and nanodiagnostics probe modes for semiconductors resistivity measurements by current technique of atomic force microscopy and by using test silicon samples with known resistivities (0.01 Ωcm, 1 Ωcm, 5 Ωcm, 10 Ωcm). It is shown that the measured resistivity data in air and in ultrahigh vacuum (10-8 Pa) is 166 Ωcm and 10 Ωcm, respectively, for the sample with ρ = 10 Ωcm of theoretically predicted resistivity. We showed that reducing of the measurements reliability in air, due to the local anodic oxidation of the substrate surface. Experimental studies of the influence of cantilever load forces (0.3 to 6.0 μN) to the samples surface on the current distribution are presented. Based on the experimental results we developed a mathematical model for determining the resistivity of semiconductor materials by current technique of atomic force microscopy. The results are useful to the development of probe methods for nanoelectronic devices analysis by atomic force microscopy.


2000 ◽  
Vol 39 (Part 2, No. 2A) ◽  
pp. L113-L115 ◽  
Author(s):  
Kousuke Yokoyama ◽  
Taketoshi Ochi ◽  
Akira Yoshimoto ◽  
Yasuhiro Sugawara ◽  
Seizo Morita

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