scholarly journals Automotive radar – investigation of mutual interference mechanisms

2010 ◽  
Vol 8 ◽  
pp. 55-60 ◽  
Author(s):  
M. Goppelt ◽  
H.-L. Blöcher ◽  
W. Menzel
Keyword(s):  
Integrated Circuits ◽  
Silicon Germanium ◽  
High Performance ◽  
Low Cost ◽  
Mutual Interference ◽  
Current Status ◽  
Automotive Radar ◽  
Joint Project ◽  
Radar Sensors ◽  
On Chip

Abstract. In the past mutual interference between automotive radar sensors has not been regarded as a major problem. With an increasing number of such systems, however, this topic is receiving more and more attention. The investigation of mutual interference and countermeasures is therefore one topic of the joint project "Radar on Chip for Cars" (RoCC) funded by the German Federal Ministry of Education and Research (BMBF). RoCC's goal is to pave the way for the development of high-performance, low-cost 79 GHz radar sensors based on Silicon-Germanium (SiGe) Monolithic Microwave Integrated Circuits (MMICs). This paper will present some generic interference scenarios and report on the current status of the analysis of interference mechanisms.

Development of a mid range automotive radar sensor for future driver assistance systems

2013 ◽  
Vol 5 (1) ◽  
pp. 15-23 ◽  
Author(s):  
Raik Schnabel ◽  
Raphael Hellinger ◽  
Dirk Steinbuch ◽  
Joachim Selinger ◽  
Michael Klar ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Urban Environments ◽  
Planar Antennas ◽  
Driver Assistance ◽  
Automotive Radar ◽  
Driver Assistance Systems ◽  
Radar Sensors ◽  
Assistance Systems ◽  
On Chip ◽  
Safety Applications

Radar sensors are key components of modern driver assistance systems. The application of such systems in urban environments for safety applications is the primary goal of the project “Radar on Chip for Cars” (RoCC). Major outcomes of this project will be presented and discussed in this contribution. These outcomes include the specification of radar sensors for future driver assistance systems, radar concepts, and integration technologies for silicon-germanium (SiGe) MMICs, as well as the development and evaluation of a system demonstrator. A radar architecture utilizing planar antennas and highly integrated components will be proposed and discussed with respect to system specifications. The developed system demonstrator will be evaluated in terms of key parameters such as field of view, distance, and angular separability. Finally, as an outlook a new mid range radar (MRR) will be introduced incorporating several concepts and technologies developed in this project.

scholarly journals Automotive Radar in a UAV to Assess Earth Surface Processes and Land Responses

Sensors ◽  
2020 ◽  
Vol 20 (16) ◽  
pp. 4463
Author(s):  
Christoph Weber ◽  
Johannes von Eichel-Streiber ◽  
Jesús Rodrigo-Comino ◽  
Jens Altenburg ◽  
Thomas Udelhoven
Keyword(s):  
Earth Science ◽  
Low Cost ◽  
Science Research ◽  
Radar Data ◽  
Current Status ◽  
Automotive Radar ◽  
Vast Number ◽  
Radar Sensors ◽  
Before And After ◽  
Insight Into

The use of unmanned aerial vehicles (UAVs) in earth science research has drastically increased during the last decade. The reason being innumerable advantages to detecting and monitoring various environmental processes before and after certain events such as rain, wind, flood, etc. or to assess the current status of specific landforms such as gullies, rills, or ravines. The UAV equipped sensors are a key part to success. Besides commonly used sensors such as cameras, radar sensors are another possibility. They are less known for this application, but already well established in research. A vast number of research projects use professional radars, but they are expensive and difficult to handle. Therefore, the use of low-cost radar sensors is becoming more relevant. In this article, to make the usage of radar simpler and more efficient, we developed with automotive radar technology. We introduce basic radar techniques and present two radar sensors with their specifications. To record the radar data, we developed a system with an integrated camera and sensors. The weight of the whole system is about 315 g for the small radar and 450 g for the large one. The whole system was integrated into a UAV and test flights were performed. After that, several flights were carried out, to verify the system with both radar sensors. Thereby, the records provide an insight into the radar data. We demonstrated that the recording system works and the radar sensors are suitable for the usage in a UAV and future earth science research because of its autonomy, precision, and lightweight.

scholarly journals A Brief Overview of On-Chip Voltage Regulation in High-Performance and High-Density Integrated Circuits

IEEE Access ◽  
2021 ◽  
Vol 9 ◽  
pp. 813-826
Author(s):  
Farid Uddin Ahmed ◽  
Zarin Tasnim Sandhie ◽  
Liaquat Ali ◽  
Masud H. Chowdhury
Keyword(s):  
Integrated Circuits ◽  
High Performance ◽  
Voltage Regulation ◽  
High Density ◽  
On Chip

scholarly journals High-Performance On-Chip Silicon Beamsplitter Based on Subwavelength Metamaterials for Enhanced Fabrication Tolerance

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1304
Author(s):  
Raquel Fernández de Cabo ◽  
David González-Andrade ◽  
Pavel Cheben ◽  
Aitor V. Velasco
Keyword(s):  
Integrated Circuits ◽  
Fundamental Mode ◽  
High Performance ◽  
Three Dimensional ◽  
High Sensitivity ◽  
Power Splitting ◽  
Excess Loss ◽  
Power Splitters ◽  
On Chip ◽  
Efficient Power

Efficient power splitting is a fundamental functionality in silicon photonic integrated circuits, but state-of-the-art power-division architectures are hampered by limited operational bandwidth, high sensitivity to fabrication errors or large footprints. In particular, traditional Y-junction power splitters suffer from fundamental mode losses due to limited fabrication resolution near the junction tip. In order to circumvent this limitation, we propose a new type of high-performance Y-junction power splitter that incorporates subwavelength metamaterials. Full three-dimensional simulations show a fundamental mode excess loss below 0.1 dB in an ultra-broad bandwidth of 300 nm (1400–1700 nm) when optimized for a fabrication resolution of 50 nm, and under 0.3 dB in a 350 nm extended bandwidth (1350–1700 nm) for a 100 nm resolution. Moreover, analysis of fabrication tolerances shows robust operation for the fundamental mode to etching errors up to ± 20 nm. A proof-of-concept device provides an initial validation of its operation principle, showing experimental excess losses lower than 0.2 dB in a 195 nm bandwidth for the best-case resolution scenario (i.e., 50 nm).

scholarly journals A Broadband THz On-Chip Transition Using a Dipole Antenna with Integrated Balun

Electronics ◽  
2018 ◽  
Vol 7 (10) ◽  
pp. 236 ◽  
Author(s):  
Wonseok Choe ◽  
Jinho Jeong
Keyword(s):  
Integrated Circuits ◽  
Insertion Loss ◽  
Low Cost ◽  
Three Dimensional ◽  
Equivalent Circuit Model ◽  
Dipole Antenna ◽  
Impedance Match ◽  
Inp Substrate ◽  
On Chip ◽  
High Dielectric

A waveguide-to-microstrip transition is an essential component for packaging integrated circuits (ICs) in rectangular waveguides, especially at millimeter-wave and terahertz (THz) frequencies. At THz frequencies, the on-chip transitions, which are monolithically integrated in ICs are preferred to off-chip transitions, as the former can eliminate the wire-bonding process, which can cause severe impedance mismatch and additional insertion loss of the transitions. Therefore, on-chip transitions can allow the production of low cost and repeatable THz modules. However, on-chip transitions show limited performance in insertion loss and bandwidth, more seriously, this is an in-band resonance issue. These problems are mainly caused by the substrate used in the THz ICs, such as an indium phosphide (InP), which exhibits a high dielectric constant, high dielectric loss, and high thickness, compared with the size of THz waveguides. In this work, we propose a broadband THz on-chip transition using a dipole antenna with an integrated balun in the InP substrate. The transition is designed using three-dimensional electromagnetic (EM) simulations based on the equivalent circuit model. We show that in-band resonances can be induced within the InP substrate and also prove that backside vias can effectively eliminate these resonances. Measurement of the fabricated on-chip transition in 250 nm InP heterojunction bipolar transistor (HBT) technology, shows wideband impedance match and low insertion loss at H-band frequencies (220–320 GHz), without in-band resonances, due to the properly placed backside vias.

Design and Calibration of MIMU Based on Chip Size Micro Inertial Sensors

2013 ◽  
Vol 849 ◽  
pp. 302-309
Author(s):  
Yun Xu ◽  
Xin Hua Zhu ◽  
Yu Wang
Keyword(s):  
High Performance ◽  
Inertial Sensors ◽  
Low Cost ◽  
Rapid Development ◽  
Experimental Result ◽  
Integrated Navigation ◽  
Bias Stability ◽  
Chip Size ◽  
Order Of Magnitude ◽  
On Chip

With rapid development of micro fabrication technology, the performance of MIMU has gradually improved. The MIMU introduced in this paper is based on the silicon micro machined gyroscope of type MSG7000D and accelerometer of type MSA6000. The volume of it is 3×3×3cm3, the mass is 68.5g and the power consumption is less than 1w. The experimental result shows that the bias stability of the gyroscope and accelerometer for each axis of the designed MIMU is less than 10°/h and 0.5mg respectively. For the non orthogonality in three axes of the structure, MIMU needs to be calibrated. After calibration, the measurement accuracy has improved by an order of magnitude. The designed MIMU can satisfy the requirement of high performance, low cost, light weight and small size for strap-down navigation system, thus it can be widely applied not only to the field of vehicles integrated navigation, attitude measurement but also to the fields of personal goods such as mobile, game consoles and so on.

Bipolar device technology challenge and opportunity

1985 ◽  
Vol 63 (6) ◽  
pp. 683-692 ◽  
Author(s):  
H. D. Barber
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Low Cost ◽  
Chemical Vapor ◽  
Low Noise ◽  
Isolation Techniques ◽  
Propagation Delays ◽  
Technological Barriers ◽  
On Chip ◽  
Bipolar Device

Silicon bipolar device technologies provided 65% of the world's integrated circuits in 1983. Where low noise, high current, low or high voltage, high speed or low cost are required, bipolar technologies are used. This paper will review the present status of bipolar device technologies, which make possible 100-ps gate-propagation delays, 150-μm2 gate areas, 1-GHz bandwidth amplifiers, on-chip control of over 1-A, 350-V operation, 14-GHz fT's and 10-ns. analogue-to-8-bit digital conversion. These devices are realized because of advances in isolation techniques, chemical-vapor deposition, photolithography, diffusion, ion implantation, conductor–contact interconnection technology, etching processes, and materials preparation. This paper will discuss some of the fundamental problems, modelling difficulties, and technological barriers that will impact the future development of bipolar integrated circuits.

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