Study of transition regime for amorphous to nano-crystalline silicon thin films using 27.12 MHz PECVD: Insight into plasma kinetics

2017 ◽  
Vol 2 (11) ◽  
pp. 691-696
Author(s):  
Deepika Chaudhary
Keyword(s):  
Thin Films ◽  
Crystalline Silicon ◽  
Transition Regime ◽  
Plasma Kinetics ◽  
Silicon Thin Films ◽  
Nano Crystalline ◽  
Insight Into

scholarly journals Effect of hydrogen dilution on crystalline properties of nano-crystalline silicon thin films in fast growth

2009 ◽  
Vol 58 (1) ◽  
pp. 565
Author(s):  
Qiu Sheng-Hua ◽  
Chen Cheng-Zhao ◽  
Liu Cui-Qing ◽  
Wu Yuan-Dan ◽  
Li Ping ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystalline Silicon ◽  
Fast Growth ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Nano Crystalline

Enhancing the crystallization fraction performance of nano-crystalline silicon thin films with argon and hydrogen annealing

2007 ◽  
Vol 515 (7-8) ◽  
pp. 3844-3846 ◽  
Author(s):  
S.F. Chen ◽  
Y.K. Fang ◽  
T.H. Lee ◽  
C.Y. Lin ◽  
P.J. Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystalline Silicon ◽  
Hydrogen Annealing ◽  
Silicon Thin Films ◽  
Nano Crystalline ◽  
Crystallization Fraction

Investigation on sub nano-crystalline silicon thin films grown using pulsed PECVD process

2018 ◽  
Vol 80 ◽  
pp. 167-173 ◽  
Author(s):  
Mansi Sharma ◽  
Deepika Chaudhary ◽  
S. Sudhakar ◽  
Sandesh Jadkar ◽  
Sushil Kumar
Keyword(s):  
Thin Films ◽  
Crystalline Silicon ◽  
Silicon Thin Films ◽  
Nano Crystalline

scholarly journals Amorphous-Nano-Crystalline Silicon Thin Films in Next Generation of Solar Cells

2012 ◽  
Vol 32 ◽  
pp. 470-476 ◽  
Author(s):  
D. Gracin ◽  
K. Juraić ◽  
J. Sancho-Parramon ◽  
P. Dubček ◽  
S. Bernstorff ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Crystalline Silicon ◽  
Next Generation ◽  
Silicon Thin Films ◽  
Nano Crystalline

scholarly journals High-rate deposition of nano-crystalline silicon thin films on plastics

2011 ◽  
Vol 8 (3) ◽  
pp. 846-849 ◽  
Author(s):  
E. Marins ◽  
V. Guduru ◽  
M. Ribeiro ◽  
F. Cerqueira ◽  
A. Bouattour ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystalline Silicon ◽  
High Rate ◽  
Silicon Thin Films ◽  
Nano Crystalline

1H NMR Study Of Hydrogenated Nanocrystalline Silicon Thin Films

2009 ◽  
Vol 1153 ◽  
Author(s):  
Kristin G. Kiriluk ◽  
David C. Bobela ◽  
Tining Su ◽  
Baojie Yan ◽  
Jeff Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Lattice Relaxation ◽  
Spin Lattice Relaxation ◽  
Dense Matrix ◽  
Spin Lattice ◽  
H Nmr ◽  
Silicon Thin Films ◽  
Nano Crystalline

AbstractHydrogenated nano-crystalline silicon (nc-Si:H) is a promising material for multi-junction solar cells. We investigated the local hydrogen environments in nano-crystalline silicon thin films by nuclear-magnetic-resonance (NMR). At room temperature, 1H NMR spectra have broader components than those observed in standard device grade hydrogenated amorphous silicon (a-Si:H). As the temperature decreases, the 1H NMR exhibits a broadening of the line shape attributed to hydrogen atoms at the interfaces between the amorphous silicon (a-Si) and the crystalline silicon (c-Si) regions. These results suggest that the local hydrogen structure in nc-Si:H is very different from that in a-Si:H. In particular, the hydrogen clusters contributing to broadened spectra may exist on the surfaces of the a-Si/c-Si interfaces which do not exist in the more dense matrix of a-Si:H and may contribute to certain unique optoelectronic properties of these nc-Si:H thin films. The dependence of the spin-lattice relaxation time (T1) on temperature, however, is very similar to that in a-Si:H, which indicates the spin-lattice relaxation mechanism, i.e via spin diffusion through molecular hydrogen, is common to both systems.

Spectral response of amorphous–nano-crystalline silicon thin films

2008 ◽  
Vol 354 (19-25) ◽  
pp. 2286-2290 ◽  
Author(s):  
D. Gracin ◽  
A. Gajović ◽  
K. Juraić ◽  
M. Čeh ◽  
Z. Remeš ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystalline Silicon ◽  
Spectral Response ◽  
Silicon Thin Films ◽  
Nano Crystalline

Quantitative photopyroelectric out-of-phase spectroscopy of amorphous silicon thin films deposited on crystalline silicon

1991 ◽  
Vol 69 (3-4) ◽  
pp. 317-323 ◽  
Author(s):  
Constantinos Christofides ◽  
Andreas Mandelis ◽  
Albert Engel ◽  
Michel Bisson ◽  
Gord Harling
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Dynamic Range ◽  
Crystalline Silicon ◽  
Optical Absorption Coefficient ◽  
Si Substrates ◽  
Silicon Thin Films ◽  
Background Compensation

A photopyroelectric spectrometer with real-time and(or) self-normalization capability was used for both conventional transmission and thermal-wave spectroscopic measurements of amorphous Si thin films, deposited on crystalline Si substrates. Optical-absorption-coefficient spectra were obtained from these measurements and the superior dynamic range of the out-of-phase (quadrature) photopyroelectric signal was established as the preferred measurement method, owing to its zero-background compensation capability. An extension of a photopyroelectric theoretical model was established and successfully tested in the determination of the optical absorption coefficient and the thermal diffusivity of the sample under investigation. Instrumental sensitivity limits of βt ≈ 5 × 10−3 were demonstrated.

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