scholarly journals Fabrication and Study of Memory Cell Switching Properties based on Ag2S Compound

2019 ◽  
Vol 182 (40) ◽  
pp. 45-48
Author(s):  
Azam Adnan ◽  
Khalid Khaleel
Keyword(s):  
Memory Cell ◽  
Cell Switching

scholarly journals Fabrication and Study of Memory Cell Switching Properties Based on Cu2S Compound

2012 ◽  
Vol 20 (6) ◽  
pp. 23-28
Author(s):  
Dr. Khalid Khaleel Mohammad ◽  
Faris Hassan Taha
Keyword(s):  
Memory Cell ◽  
Cell Switching

Domain flexibility and pseudospin valve memory cell switching thresholds

2000 ◽  
Vol 87 (9) ◽  
pp. 6388-6390 ◽  
Author(s):  
A. V. Pohm ◽  
J. M. Anderon ◽  
R. S. Beech ◽  
J. M. Daughton
Keyword(s):  
Memory Cell ◽  
Cell Switching

Carrier Profiling of the 10-nm-order Structure in a 3D Flash Memory Cell Using Scanning Nonlinear Dielectric Microscopy

2019 ◽  
Author(s):  
Jun Hirota ◽  
Ken Hoshino ◽  
Tsukasa Nakai ◽  
Kohei Yamasue ◽  
Yasuo Cho
Keyword(s):  
Spatial Resolution ◽  
Flash Memory ◽  
Analytical Techniques ◽  
Memory Cell ◽  
Memory Device ◽  
Floating Gate ◽  
Order Structure ◽  
Carrier Distribution ◽  
Nonlinear Dielectric ◽  
Flash Memory Cell

Abstract In this paper, the authors report their successful attempt to acquire the scanning nonlinear dielectric microscopy (SNDM) signals around the floating gate and channel structures of the 3D Flash memory device, utilizing the custom-built SNDM tool with a super-sharp diamond tip. The report includes details of the SNDM measurement and process involved in sample preparation. With the super-sharp diamond tips with radius of less than 5 nm to achieve the supreme spatial resolution, the authors successfully obtained the SNDM signals of floating gate in high contrast to the background in the selected areas. They deduced the minimum spatial resolution and seized a clear evidence that the diffusion length differences of the n-type impurity among the channels are less than 21 nm. Thus, they concluded that SNDM is one of the most powerful analytical techniques to evaluate the carrier distribution in the superfine three dimensionally structured memory devices.

SILC effects on E/sup 2/PROM memory cell reliability

2002 ◽  
Vol 2 (1) ◽  
pp. 13-18 ◽  
Author(s):  
L. Larcher ◽  
S. Bertulu ◽  
P. Pavan
Keyword(s):  
Memory Cell

scholarly journals Single-Poly Floating-Gate Memory Cell Options for Analog Neural Networks

2021 ◽  
pp. 108062
Author(s):  
Maksym Paliy ◽  
Tommaso Rizzo ◽  
Piero Ruiu ◽  
Sebastiano Strangio ◽  
Giuseppe Iannaccone
Keyword(s):  
Neural Networks ◽  
Memory Cell ◽  
Floating Gate ◽  
Floating Gate Memory ◽  
Analog Neural Networks

scholarly journals Pre-Emphasis Pulse Design for Random-Access Memory

Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1454
Author(s):  
Yoshihiro Sugiura ◽  
Toru Tanzawa
Keyword(s):  
Time Constant ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Memory Access ◽  
Access Time ◽  
Access Memory ◽  
Delay Times ◽  
Cell Current ◽  
The Impact

This paper describes how one can reduce the memory access time with pre-emphasis (PE) pulses even in non-volatile random-access memory. Optimum PE pulse widths and resultant minimum word-line (WL) delay times are investigated as a function of column address. The impact of the process variation in the time constant of WL, the cell current, and the resistance of deciding path on optimum PE pulses are discussed. Optimum PE pulse widths and resultant minimum WL delay times are modeled with fitting curves as a function of column address of the accessed memory cell, which provides designers with the ability to set the optimum timing for WL and BL (bit-line) operations, reducing average memory access time.

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