Pulsed Laser Deposition Deposited Layers of Pseudo-Binary Zinc Oxides and Zinc-Porphyrin for Steel Corrosion Inhibition

CORROSION ◽  
10.5006/3550 ◽  
2020 ◽  
Vol 76 (8) ◽  
pp. 734-741
Author(s):  
Mihaela Birdeanu ◽  
Mirela Vaida ◽  
Aurel Valentin Bîrdeanu ◽  
Eugenia Fagadar-Cosma
Keyword(s):  
Pulsed Laser Deposition ◽  
Inhibition Efficiency ◽  
Pulsed Laser ◽  
Steel Corrosion ◽  
Binary Oxide ◽  
Laser Deposition ◽  
Oxide Materials ◽  
Barrier Effect ◽  
Zinc Porphyrin ◽  
Zinc Oxides

Obtaining of ZnTa2O6 and ZnV2O6 pseudo-binary oxide materials by hydrothermal and coprecipitation methods and of Zn(II) 5-pyridyl-10,15,20-tris-(3,4-di-methoxy-phenyl) porphyrin (ZnPydiMeOPP) are presented. Mixed thin films of pseudo-binary oxide materials and Zn-porphyrin were realized by pulsed laser deposition (PLD) technique on steel disks and corrosion tests in 0.1 M HCl solution were performed. The inhibition efficiency (IE) in all cases containing porphyrin was always higher than 80%. The best IE (84.50%) was obtained for the sandwich structure using the hydrothermally obtained ZnV2O6 oxide as the first layer and the ZnPydiMeOPP porphyrin as the second layer. The mechanism of corrosion protection can be explained by the physical/mechanical barrier effect.

Electrical Properties of Ag/In2O3/M (M = LaNiO3, Pt) Devices for RRAM Applications

2013 ◽  
Vol 209 ◽  
pp. 94-97
Author(s):  
Bhaumik V. Mistry ◽  
Utpal S. Joshi ◽  
S.J. Trivedi ◽  
U.N. Trivedi ◽  
R. Pinto
Keyword(s):  
Bottom Electrode ◽  
Pulsed Laser ◽  
Grazing Incidence ◽  
Resistance Switching ◽  
Binary Oxide ◽  
Laser Deposition ◽  
Oxide Materials ◽  
Cross Sectional ◽  
New Class ◽  
Switching Characteristics

Resistance switching properties of nanostructured In2Subscript textO3 films grown on Pt and LaNiO3 (LNO) bottom electrodes have been investigated. High quality In2O3/LNO/SiO2 and In2O3/Pt/Ti/SiO2/Si heterostructures were grown by pulsed laser deposition. High purity Ag was thermally evaporated on In2O3 active layer to form top electrode. The Ag/In2O3/M (M = LNO, Pt) structure was characterized by grazing incidence XRD, AFM and cross sectional SEM. Pollycrystalline growth of oxides LNO and In2O3 was confirmed by GIXRD, where as AFM show nanostructured growth with smooth surface morphology. Two terminal I-V characteristics showed reproducible hysteresis suggesting two distinct resistance states in the film. Typical resistance switching ratio (Ron/Roff) of the order of 113 % and 72% have been estimated for In2O3 device grown on LNO and Pt substrates, respectively. The observed resistance switching characteristics offers lot of promise for new class of binary oxide materials with oxide (LNO) as bottom electrode leading to better suitability for nanoelectronics RRAM devices.

scholarly journals Stoichiometry control of complex oxides by sequential pulsed-laser deposition from binary-oxide targets

2015 ◽  
Vol 106 (13) ◽  
pp. 131601 ◽  
Author(s):  
A. Herklotz ◽  
K. Dörr ◽  
T. Z. Ward ◽  
G. Eres ◽  
H. M. Christen ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Complex Oxides ◽  
Binary Oxide ◽  
Laser Deposition ◽  
Stoichiometry Control

scholarly journals In-situ monitoring during pulsed laser deposition of layered oxide materials

1998 ◽  
Author(s):  
Dave H. A. Blank ◽  
Gertjan Koster ◽  
Guus J. H. M. Rijnders ◽  
Horst Rogalla
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
In Situ Monitoring ◽  
Laser Deposition ◽  
Oxide Materials ◽  
Layered Oxide

Influence of tin doping on the structural and physical properties of indium–zinc oxides thin films deposited by pulsed laser deposition

2002 ◽  
Vol 419 (1-2) ◽  
pp. 160-165 ◽  
Author(s):  
N. Naghavi ◽  
C. Marcel ◽  
L. Dupont ◽  
C. Guéry ◽  
C. Maugy ◽  
...  
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zinc Oxides

Ferroelectric/Ferromagnetic Bilayers Based on Oxide Materials by Pulsed-Laser Deposition

2013 ◽  
Vol 49 (8) ◽  
pp. 4586-4589 ◽  
Author(s):  
J. E. Ordonez ◽  
M. E. Gomez ◽  
W. Lopera ◽  
P. Prieto
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Materials

Pulsed laser deposition of novel oxide materials

2005 ◽  
Vol 21 (3) ◽  
pp. 172-175 ◽  
Author(s):  
P. Kuppusami ◽  
S. N. Padhi ◽  
K. Muthukkumaran ◽  
E. Mohandas ◽  
V. S. Raghunathan
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Materials

Effects of temperature and oxygen pressure on binary oxide growth using aperture-controlled combinatorial pulsed-laser deposition

2007 ◽  
Vol 254 (3) ◽  
pp. 785-788 ◽  
Author(s):  
Nabil D. Bassim ◽  
Peter K. Schenck ◽  
Eugene U. Donev ◽  
Edwin J. Heilweil ◽  
Eric Cockayne ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Binary Oxide ◽  
Laser Deposition ◽  
Oxide Growth ◽  
Effects Of Temperature

Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

1993 ◽  
Vol 51 ◽  
pp. 438-439
Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ceramic Materials ◽  
Laser Deposition ◽  
Triple Junctions ◽  
Ion Milling ◽  
Multicomponent Oxides ◽  
Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

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