Electrochemical Behavior of Screen-Printed Carbon Electrodes as Transducers in Biosensors

CORROSION ◽  
10.5006/3203 ◽  
2020 ◽  
Vol 76 (6) ◽  
pp. 553-561
Author(s):  
Ricardo Adriano Dorledo de Faria ◽  
Alexandre Douaud ◽  
Renata Braga Soares ◽  
Luiz Guilherme Dias Heneine ◽  
Tulio Matencio ◽  
...  
Keyword(s):  
Electrochemical Sensors ◽  
Electrochemical Impedance ◽  
Conductive Atomic Force Microscopy ◽  
Heterogeneous Distribution ◽  
Force Microscopy ◽  
Irregular Structure ◽  
Atomic Force ◽  
Screen Printed Carbon Electrode ◽  
Electrochemical Transducer ◽  
Screen Printed

Screen-printed carbon electrode (SPCE) was examined as a transducer substrate for application in electrochemical sensors. Aqueous solutions of 0.1 M KCl and 0.1 M KCl + 5 mM K3[Fe(CN)6]/K4[Fe(CN)6] (redox solution) were prepared to simulate the environment of faradaic and non-faradaic sensing, respectively. The SPCE presented an irregular surface composed by two main carbon phases. Raman spectroscopy results revealed the presence of peaks around 1,580 cm−1 and 1,334 cm−1 related to the G and D bands corresponding to sp2 carbon atoms (graphite flakes) and a multitude of broad bands associable to amorphous sp3 carbon in the ink matrix. Conductive atomic force microscopy indicated that the irregular structure of the SPCE led to the heterogeneous distribution of the current over the surface and the electroactivity of this material was mainly attributed to the presence of graphite. Polarization curves and electrochemical impedance spectroscopy (EIS) revealed that the redox solution was more aggressive to the SPCE, despite this electrode was achieved a quasi-steady state for 1 h under the effect of a polarization potential in both electrolytes, which justifies its use as an electrochemical transducer in faradaic and non-faradaic devices.

Electrochemical and atomic force microscopy investigations of the effect of CdS on the local electrical properties of CH3NH3PbI3:CdS perovskite solar cells

2017 ◽  
Vol 5 (46) ◽  
pp. 12112-12120 ◽  
Author(s):  
Mingxuan Guo ◽  
Fumin Li ◽  
Lanyu Ling ◽  
Chong Chen
Keyword(s):  
Atomic Force Microscopy ◽  
Solar Cells ◽  
Electrochemical Impedance Spectroscopy ◽  
Electrochemical Impedance ◽  
Bulk Heterojunction ◽  
Perovskite Solar Cells ◽  
Kelvin Probe ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

The effect of the incorporated CdS on the local optoelectronic properties of CH3NH3PbI3:CdS bulk heterojunction (BHJ) perovskite solar cells (PSCs) are studied using Kelvin probe force microscopy (KPFM), conductive atomic force microscopy (c-AFM) and electrochemical impedance spectroscopy (EIS).

Fault Isolation of MOL and FEOL Buried Defects Using Conductive Atomic Force Microscopy as a Complement to Passive Voltage Contrast Imaging

2017 ◽  
Author(s):  
Lucile C. Teague Sheridan ◽  
Linda Conohan ◽  
Chong Khiam Oh
Keyword(s):  
Atomic Force Microscopy ◽  
Cmos Technology ◽  
Fault Isolation ◽  
Contrast Imaging ◽  
Conductive Atomic Force Microscopy ◽  
Isolation Technique ◽  
Conductive Afm ◽  
Force Microscopy ◽  
Atomic Force ◽  
Voltage Contrast

Abstract Atomic force microscopy (AFM) methods have provided a wealth of knowledge into the topographic, electrical, mechanical, magnetic, and electrochemical properties of surfaces and materials at the micro- and nanoscale over the last several decades. More specifically, the application of conductive AFM (CAFM) techniques for failure analysis can provide a simultaneous view of the conductivity and topographic properties of the patterned features. As CMOS technology progresses to smaller and smaller devices, the benefits of CAFM techniques have become apparent [1-3]. Herein, we review several cases in which CAFM has been utilized as a fault-isolation technique to detect middle of line (MOL) and front end of line (FEOL) buried defects in 20nm technologies and beyond.

Fault Localization in Contact Level by Using Conductive Atomic Force Microscopy

2003 ◽  
Author(s):  
Jon C. Lee ◽  
J. H. Chuang
Keyword(s):  
Atomic Force Microscopy ◽  
Integrated Circuits ◽  
Fault Localization ◽  
Electrical Characterization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Optical Electron ◽  
Defect Isolation ◽  
Voltage Contrast

Abstract As integrated circuits (IC) have become more complicated with device features shrinking into the deep sub-micron range, so the challenge of defect isolation has become more difficult. Many failure analysis (FA) techniques using optical/electron beam and scanning probe microscopy (SPM) have been developed to improve the capability of defect isolation. SPM provides topographic imaging coupled with a variety of material characterization information such as thermal, magnetic, electric, capacitance, resistance and current with nano-meter scale resolution. Conductive atomic force microscopy (C-AFM) has been widely used for electrical characterization of dielectric film and gate oxide integrity (GOI). In this work, C-AFM has been successfully employed to isolate defects in the contact level and to discriminate various contact types. The current mapping of C-AFM has the potential to identify micro-leaky contacts better than voltage contrast (VC) imaging in SEM. It also provides I/V information that is helpful to diagnose the failure mechanism by comparing I/V curves of different contact types. C-AFM is able to localize faulty contacts with pico-amp current range and to characterize failure with nano-meter scale lateral resolution. C-AFM should become an important technique for IC fault localization. FA examples of this technique will be discussed in the article.

Application of Conductive-AFM in Soft Failure Analysis

2017 ◽  
Author(s):  
Chuan Zhang ◽  
Yinzhe Ma ◽  
Gregory Dabney ◽  
Oh Chong Khiam ◽  
Esther P.Y. Chen
Keyword(s):  
Failure Analysis ◽  
Conductive Atomic Force Microscopy ◽  
Test Parameter ◽  
Conductive Afm ◽  
Force Microscopy ◽  
Analysis Methodology ◽  
Soft Failure ◽  
Atomic Force ◽  
Test Conditions ◽  
Sensitive Characteristics

Abstract Soft failures are among the most challenging yield detractors. They typically show test parameter sensitive characteristics, which would pass under certain test conditions but fail under other conditions. Conductive-atomic force microscopy (CAFM) emerged as an ideal solution for soft failure analysis that can balance the time and thoroughness. By inserting CAFM into the soft failure analysis flow, success rate of such type of analysis can be significantly enhanced. In this paper, a logic chain soft failure and a SRAM local bitline soft failure are used as examples to illustrate how this failure analysis methodology provides a powerful and efficient solution for soft failure analysis.

Imaging and nanoprobing of graphene layers for interconnects by conductive atomic force microscopy

2015 ◽  
Vol 54 (5S) ◽  
pp. 05EB02 ◽  
Author(s):  
Li Zhang ◽  
Masayuki Katagiri ◽  
Taishi Ishikura ◽  
Makoto Wada ◽  
Hisao Miyazaki ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Conductive Atomic Force Microscopy ◽  
Graphene Layers ◽  
Force Microscopy ◽  
Atomic Force
Sign in / Sign up

Export Citation Format

Share Document